Follow
A F M Anhar Uddin Bhuiyan
A F M Anhar Uddin Bhuiyan
Assistant Professor, Electrical and Computer Engineering, University of Massachusetts Lowell
Verified email at uml.edu - Homepage
Title
Cited by
Cited by
Year
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao
Applied Physics Letters 114 (25), 2019
2592019
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...
Applied Physics Letters 115 (12), 2019
1302019
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 2020
1082020
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020
922020
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ...
Crystal Growth & Design 20 (10), 6722-6730, 2020
772020
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ...
APL Materials 8 (2), 2020
592020
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors
NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
482020
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (25), 2020
452020
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films
JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ...
APL Materials 9 (5), 2021
442021
Mg acceptor doping in MOCVD (010) β-Ga2O3
Z Feng, AFMAU Bhuiyan, NK Kalarickal, S Rajan, H Zhao
Applied Physics Letters 117 (22), 222106, 2020
442020
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2 01) β-Ga2O3 substrates
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (14), 2020
402020
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates
AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
APL Materials 9 (10), 2021
312021
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ...
Applied Physics Letters 117 (17), 2020
312020
High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium
L Meng, Z Feng, AFMAU Bhuiyan, H Zhao
Crystal Growth & Design 22 (6), 3896-3904, 2022
302022
APL Mater. 8, 031104 (2020)
A Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, MR Karim, ...
26
A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1− x) 2O3
J Sarker, S Broderick, AFM Bhuiyan, Z Feng, H Zhao, B Mazumder
Applied Physics Letters 116 (15), 2020
242020
MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films
AFMAU Bhuiyan, Z Feng, L Meng, H Zhao
Journal of Materials Research 36 (23), 4804-4815, 2021
202021
β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching
HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ...
Applied Physics Letters 121 (5), 2022
192022
Band offsets at metalorganic chemical vapor deposited β-(AlxGa1− x) 2O3/β-Ga2O3 interfaces—Crystalline orientation dependence
AFMAU Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (6…, 2021
182021
Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux
NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ...
Applied Physics Letters 119 (12), 2021
182021
The system can't perform the operation now. Try again later.
Articles 1–20