| Negative capacitance FinFET with sub-20-mV/decade subthreshold slope and minimal hysteresis of 0.48 V E Ko, JW Lee, C Shin IEEE Electron Device Letters 38 (4), 418-421, 2017 | 121 | 2017 |
| Low-frequency noise in junctionless multigate transistors D Jang, JW Lee, CW Lee, JP Colinge, L Montès, JI Lee, GT Kim, ... Applied Physics Letters 98 (13), 2011 | 69 | 2011 |
| An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires X Xu, A Potié, R Songmuang, JW Lee, B Bercu, T Baron, B Salem, ... Nanotechnology 22 (10), 105704, 2011 | 57 | 2011 |
| Quantitative temperature measurement of an electrically heated carbon nanotube using the null-point method J Chung, K Kim, G Hwang, O Kwon, S Jung, J Lee, JW Lee, GT Kim Review of Scientific Instruments 81 (11), 2010 | 57 | 2010 |
| Mobility analysis of surface roughness scattering in FinFET devices JW Lee, D Jang, M Mouis, GT Kim, T Chiarella, T Hoffmann, G Ghibaudo Solid-State Electronics 62 (1), 195-201, 2011 | 51 | 2011 |
| Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors J Woo Lee, Y Sasaki, M Ju Cho, M Togo, G Boccardi, R Ritzenthaler, ... Applied Physics Letters 102 (22), 2013 | 38 | 2013 |
| Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors JW Lee, D Jang, GT Kim, M Mouis, G Ghibaudo Journal of Applied Physics 107 (4), 2010 | 35 | 2010 |
| Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors D Jang, JW Lee, K Tachi, L Montes, T Ernst, GT Kim, G Ghibaudo Applied Physics Letters 97 (7), 2010 | 31 | 2010 |
| Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs M Togo, JW Lee, L Pantisano, T Chiarella, R Ritzenthaler, R Krom, ... 2012 International Electron Devices Meeting, 18.2. 1-18.2. 4, 2012 | 23 | 2012 |
| Comparison of temperature dependent carrier transport in FinFET and gate-all-around nanowire FET S Kim, J Kim, D Jang, R Ritzenthaler, B Parvais, J Mitard, H Mertens, ... Applied Sciences 10 (8), 2979, 2020 | 20 | 2020 |
| Assessment of the impact of inelastic tunneling on the frequency-depth conversion from low-frequency noise spectra E Simoen, JW Lee, C Claeys IEEE Transactions on Electron Devices 61 (2), 634-637, 2014 | 20 | 2014 |
| 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor J Woo Lee, E Simoen, R Ritzenthaler, M Togo, G Boccardi, J Mitard, ... Applied Physics Letters 102 (7), 2013 | 20 | 2013 |
| Impact of trap localization on low-frequency noise in nanoscale device JW Lee, WS Yun, G Ghibaudo Journal of Applied Physics 115 (19), 2014 | 19 | 2014 |
| Degradation pattern of black phosphorus multilayer field− effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors BC Lee, CM Kim, HK Jang, JW Lee, MK Joo, GT Kim Applied Surface Science 419, 637-641, 2017 | 17 | 2017 |
| Maskless optical microscope lithography system ES Park, D Jang, J Lee, YJ Kim, J Na, H Ji, JW Choi, GT Kim Review of Scientific Instruments 80 (12), 2009 | 16 | 2009 |
| Performance and reliability of high-mobility Si0.55Ge0.45p-channel FinFETs based on epitaxial cladding of Si Fins H Mertens, R Ritzenthaler, A Hikavyy, J Franco, JW Lee, DP Brunco, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 15 | 2014 |
| Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement J Woo Lee, D Jang, M Mouis, K Tachi, G Tae Kim, T Ernst, G Ghibaudo Applied Physics Letters 101 (14), 2012 | 15 | 2012 |
| Sidewall Crystalline Orientation Effect of Post-treatments for Replacement Metal Gate Bulk Fin Field Effect Transistor JW Lee, E Simoen, A Veloso, MJ Cho, G Boccardi, LÅ Ragnarsson, ... ACS Applied Materials & Interfaces 5 (18), 8865–8868, 2013 | 14 | 2013 |
| Heated implantation with amorphous carbon CMOS mask for scaled FinFETs M Togo, Y Sasaki, G Zschaetzsch, G Boccardi, R Ritzenthaler, JW Lee, ... 2013 Symposium on VLSI Technology, T196-T197, 2013 | 14 | 2013 |
| Low Frequency Noise Analysis for Post-treatment of Replacement Metal Gate JW Lee, E Simoen, A Veloso, MJ Cho, H Arimura, G Boccardi, ... Electron Devices, IEEE Transactions on 60 (9), 2960 - 2962, 2013 | 13 | 2013 |
Gerard GhibaudoIMEP-LAHC, Minatec-INP GrenobleGeverifieerd e-mailadres voor minatec.inpg.fr
