Vladimir Protasenko
Vladimir Protasenko
Verified email at cornell.edu
Cited by
Cited by
Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures
J Simon, V Protasenko, C Lian, H Xing, D Jena
Science 327 (5961), 60-64, 2010
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ...
Applied Physics Letters 101 (1), 013107, 2012
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators
B Sensale-Rodriguez, R Yan, S Rafique, M Zhu, W Li, X Liang, ...
Nano letters 12 (9), 4518-4522, 2012
Solution-based straight and branched CdTe nanowires
M Kuno, O Ahmad, V Protasenko, D Bacinello, TH Kosel
Chemistry of materials 18 (24), 5722-5732, 2006
Exfoliated multilayer MoTe2 field-effect transistors
S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ...
Applied Physics Letters 105 (19), 192101, 2014
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ...
Applied Physics Letters 107 (24), 243501, 2015
Terahertz imaging employing graphene modulator arrays
B Sensale-Rodriguez, S Rafique, R Yan, M Zhu, V Protasenko, D Jena, ...
Optics express 21 (2), 2324-2330, 2013
Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids
A Singh, X Li, V Protasenko, G Galantai, M Kuno, H Xing, D Jena
Nano letters 7 (10), 2999-3006, 2007
Experimental determination of the absorption cross-section and molar extinction coefficient of CdSe and CdTe nanowires
V Protasenko, D Bacinello, M Kuno
The Journal of Physical Chemistry B 110 (50), 25322-25331, 2006
Disorder‐induced optical heterogeneity in single cdse nanowires
VV Protasenko, KL Hull, M Kuno
Advanced Materials 17 (24), 2942-2949, 2005
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
SM Islam, K Lee, J Verma, V Protasenko, S Rouvimov, S Bharadwaj, ...
Applied Physics Letters 110 (4), 041108, 2017
CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic assembly, and field-sensitive emission
R Zhou, HC Chang, V Protasenko, M Kuno, AK Singh, D Jena, H Xing
Journal of applied physics 101 (7), 073704, 2007
Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures
J Verma, SM Islam, V Protasenko, P Kumar Kandaswamy, H Xing, D Jena
Applied Physics Letters 104 (2), 021105, 2014
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
Photon Counting Statistics for Blinking CdSe− ZnS Quantum Dots: A LÚvy Walk Process
G Margolin, V Protasenko, M Kuno, E Barkai
The Journal of Physical Chemistry B 110 (38), 19053-19060, 2006
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
J Verma, PK Kandaswamy, V Protasenko, A Verma, H Grace Xing, D Jena
Applied Physics Letters 102 (4), 041103, 2013
N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping
J Verma, J Simon, V Protasenko, T Kosel, H Grace Xing, D Jena
Applied Physics Letters 99 (17), 171104, 2011
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
P Gupta, AA Rahman, S Subramanian, S Gupta, A Thamizhavel, T Orlova, ...
Scientific reports 6 (1), 1-8, 2016
Power law blinking quantum dots: Stochastic and physical models
G Margolin, V Protasenko, M Kuno, E Barkai
arXiv preprint cond-mat/0506512, 2005
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