| Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ... 2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012 | 181 | 2012 |
| Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memory Z Guangle US Patent 9,595,530, 2017 | 169 | 2017 |
| AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ... IEEE electron device letters 33 (3), 363-365, 2012 | 166 | 2012 |
| Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ... IEEE Electron Device Letters 33 (5), 655-657, 2012 | 140 | 2012 |
| InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ... IEEE Electron Device Letters 33 (6), 782-784, 2012 | 105 | 2012 |
| Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ... IEEE Electron Device Letters 32 (11), 1516-1518, 2011 | 72 | 2011 |
| IEDM Tech. Dig. J Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ... IEDM Tech. Dig, 773, 2012 | 56 | 2012 |
| Low voltage tunnel field-effect transistor (TFET) and method of making same AC Seabaugh, P Fay, X Huili Grace, Z Guangle, LU Yeqing, MA Wistey, ... US Patent 8,796,733, 2014 | 51 | 2014 |
| InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field R Li, Y Lu, SD Chae, G Zhou, Q Liu, C Chen, M Shahriar Rahman, ... physica status solidi c 9 (2), 389-392, 2012 | 51 | 2012 |
| Multiple junction thin film transistor Z Guangle, MC Wu, YT Chen US Patent 9,653,617, 2017 | 36 | 2017 |
| Vertical transistor and local interconnect structure YT Chen, Z Guangle, C Petti US Patent 9,583,615, 2017 | 35 | 2017 |
| Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs G Zhou, Y Lu, R Li, Q Zhang, W Hwang, Q Liu, T Vasen, H Zhu, J Kuo, ... 69th Device Research Conference, 205-206, 2011 | 24 | 2011 |
| Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy Q Zhang, G Zhou, HG Xing, AC Seabaugh, K Xu, H Sio, OA Kirillov, ... Applied Physics Letters 100 (10), 2012 | 18 | 2012 |
| Resistive memory device having sidewall spacer electrode and method of making thereof MC Wu, C Pan, Z Guangle, T Kumar US Patent 9,806,256, 2017 | 16 | 2017 |
| Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS= 0.5 V Z Guangle, R Li, T Vasen, MQS Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ... IEEE Int. Electron Devices Meet, 777-780, 2012 | 16 | 2012 |
| Methods and apparatus for three-dimensional nonvolatile memory Z Guangle, Y Li, Y Chen, T Kumar US Patent 9,768,180, 2017 | 9 | 2017 |
| Self-Aligned In0. 53Ga0. 47As/InAs/InP Vertical Tunnel FETs G Zhou, Y Lu, R Li, W Hwang, Q Zhang, Q Liu, T Vasen, C Chen, H Zhu, ... Proc. Int. Conf. Compound Semicond. Manuf. Technol, 339, 2011 | 6 | 2011 |
| Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark Z Jiang, Y He, G Zhou, T Kubis, HG Xing, G Klimeck 71st Device Research Conference, 145-146, 2013 | 5 | 2013 |
| III-V tunnel field-effect transistors A Seabaugh, SD Chae, P Fay, WS Hwang, T Kosel, R Li, Q Liu, Y Lu, ... ECS Transactions 41 (7), 227, 2011 | 3 | 2011 |
| Tunnel FETs with tunneling normal to the gate HG Xing, G Zhou, M Li, Y Lu, R Li, M Wistey, P Fay, D Jena, A Seabaugh 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-1, 2013 | 1 | 2013 |
Huili Grace XingProf. of ECE & MSE, Cornell UniversityVerified email at cornell.edu
Huili Grace XingProf. of ECE & MSE, Cornell UniversityVerified email at cornell.edu