Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset M Pown, B Lakshmi IEEE Journal of the Electron Devices Society 8, 1397-1403, 2020 | 18 | 2020 |
Design of band pass filter using active inductor for RF receiver front-end D Selvathi, M Pown 2014 International Conference on Communication and Network Technologies, 296-301, 2014 | 14 | 2014 |
Design and Analysis of UWB Down-Conversion Mixer with Linearization Techniques D Selvathi, M Pown, S Manjula WSEAS Transactions on Circuits and Systems 13, 202-207, 2014 | 10 | 2014 |
Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers M Pown, B Lakshmi Journal of Computational Electronics 16 (3), 676-684, 2017 | 7 | 2017 |
Investigation of Homo and Hetero-Junction Double-Gate Tunnel-FET-Based Adiabatic Inverter Circuits M Pown, S Sandeep, B Lakshmi IETE Journal of Research, 1-9, 2020 | 5 | 2020 |
Investigation of ft and f max in Si and Si1–x Ge x based single and dual material double-gate Tunnel FETs for RF applications M Pown, B Lakshmi Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (2), 025006, 2016 | 5 | 2016 |
Design of Universal Logic Gates using Homo and Hetero-Junction Double Gate TFETs with Pseudo-Derived Logic L Boggarapu, SP Kumar K, P M, B Lakshmi INTERNATIONAL JOURNAL OF ELECTRONICS, 2022 | 1 | 2022 |
Tunnel Field Effect Transistors for Digital and Analog Applications: A Review S Poorvasha, M Pown, B Lakshmi Indian Journal of Science and Technology 10 (13), 2017 | 1 | 2017 |
Impact of underlap variation on the analog parameters of high- κ gate dielectric based double gate tunnel FETs BL Viral Gokani, Roop Narayan Goswami, M. Pown International Journal of Applied Engineering Research 10 (92), 268-273, 2015 | | 2015 |
Stability Analysis Of Homo And Hetero-Junction Based TFET SRAMS M Pown, B Lakshmi | | |