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Chia-Yen Huang
Chia-Yen Huang
National Yang Ming Chiao Tung University, Department of Photonics
Verified email at nycu.edu.tw
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Cited by
Year
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
4762013
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ...
Applied Physics Letters 100 (20), 2012
2182012
Phosphorous diffuser diverged blue laser diode for indoor lighting and communication
YC Chi, DH Hsieh, CY Lin, HY Chen, CY Huang, JH He, B Ooi, ...
Scientific reports 5 (1), 1-9, 2015
1652015
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...
Applied Physics Express 3 (1), 011002, 2009
1212009
High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes
Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ...
Applied physics letters 99 (5), 2011
982011
High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes
YD Lin, S Yamamoto, CY Huang, CL Hsiung, F Wu, K Fujito, H Ohta, ...
Applied Physics Express 3 (8), 082001, 2010
952010
Optical waveguide simulations for the optimization of InGaN-based green laser diodes
CY Huang, YD Lin, A Tyagi, A Chakraborty, H Ohta, JS Speck, ...
Journal of Applied Physics 107 (2), 2010
842010
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate
YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ...
Applied physics express 2 (8), 082102, 2009
792009
Influence of polarity on carrier transport in semipolar (2021) and (202 1) multiple-quantum-well light-emitting diodes
Y Kawaguchi, CY Huang, YR Wu, Q Yan, CC Pan, Y Zhao, S Tanaka, ...
Applied Physics Letters 100 (23), 2012
672012
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding
KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ...
Applied Physics Express 2 (7), 071003, 2009
602009
Non-polar m-plane intersubband based InGaN/(Al) GaN quantum well infrared photodetectors
A Pesach, E Gross, CY Huang, YD Lin, A Vardi, SE Schacham, ...
Applied physics letters 103 (2), 2013
532013
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells
CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ...
Applied Physics Letters 99 (24), 2011
532011
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
CY Huang, PY Wu, KS Chang, YH Lin, WC Peng, YY Chang, JP Li, ...
Aip Advances 7 (5), 2017
512017
Semipolar iii-nitride laser diodes with etched mirrors
A Tyagi, RM Farrell, CY Huang, PS Hsu, DA Haeger, KM Kelchner, ...
US Patent App. 12/908,478, 2011
432011
Semipolar (2021) single-quantum-well red light-emitting diodes with a low forward voltage
Y Kawaguchi, CY Huang, YR Wu, Y Zhao, SP DenBaars, S Nakamura
Japanese Journal of Applied Physics 52 (8S), 08JC08, 2013
372013
Suppressing void defects in long wavelength semipolar (202 1) InGaN quantum wells by growth rate optimization
Y Zhao, F Wu, CY Huang, Y Kawaguchi, S Tanaka, K Fujito, JS Speck, ...
Applied Physics Letters 102 (9), 2013
302013
Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes
MT Hardy, F Wu, CY Huang, Y Zhao, DF Feezell, S Nakamura, JS Speck, ...
IEEE Photonics Technology Letters 26 (1), 43-46, 2013
252013
Influence of Mg-doped barriers on semipolar (202 1) multiple-quantum-well green light-emitting diodes
CY Huang, Q Yan, Y Zhao, K Fujito, D Feezell, CG Van de Walle, ...
Applied Physics Letters 99 (14), 2011
252011
m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
YD Lin, CY Huang, MT Hardy, PS Hsu, K Fujito, A Chakraborty, H Ohta, ...
Applied Physics Letters 95 (8), 2009
242009
Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates
CY Huang, S Walde, CL Tsai, C Netzel, HH Liu, S Hagedorn, YR Wu, ...
Japanese journal of applied physics 59 (7), 070904, 2020
182020
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