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Roy B. Chung
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Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes
H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura
US Patent 8,148,713, 2012
5822012
High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2021) GaN substrates
S Yamamoto, Y Zhao, CC Pan, RB Chung, K Fujito, J Sonoda, ...
Applied physics express 3 (12), 122102, 2010
2192010
Optical properties of yellow light-emitting diodes grown on semipolar (112 2) bulk GaN substrates
H Sato, RB Chung, H Hirasawa, N Fellows, H Masui, F Wu, M Saito, ...
Applied Physics Letters 92 (22), 2008
2072008
High power and high efficiency green light emitting diode on free‐standing semipolar (11 ̄2 2) bulk GaN substrate
H Sato, A Tyagi, H Zhong, N Fellows, RB Chung, M Saito, K Fujito, ...
physica status solidi (RRL)–Rapid Research Letters 1 (4), 162-164, 2007
1402007
MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B) N BASED LIGHT EMITTING DIODES
H Sato, RB Chung, F Wu, JS Speck, SP DenBaars, S Nakamura
US Patent App. 12/419,128, 2009
1372009
High quality AlN grown on SiC by metal organic chemical vapor deposition
Z Chen, S Newman, D Brown, R Chung, S Keller, UK Mishra, ...
Applied Physics Letters 93 (19), 191906-191906-3, 2008
1192008
High power and high efficiency blue light emitting diode on freestanding semipolar (101 1) bulk GaN substrate
H Zhong, A Tyagi, NN Fellows, F Wu, RB Chung, M Saito, K Fujito, ...
Applied Physics Letters 90 (23), 2007
1112007
Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
RB Chung, Z Chen, JS Speck, SP DenBaars, S Nakamura
US Patent 8,084,763, 2011
1092011
High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes
Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ...
Applied physics letters 99 (5), 2011
1002011
Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors
SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck
Applied physics express 4 (2), 4101, 2011
882011
Semipolar (1011) InGaN/GaN laser diodes on bulk GaN substrates
A Tyagi, H Zhong, RB Chung, DF Feezell, M Saito, K Fujito, JS Speck, ...
Japanese Journal of Applied Physics 46 (5L), L444, 2007
722007
Growth study and impurity characterization of AlxIn1− xN grown by metal organic chemical vapor deposition
RB Chung, F Wu, R Shivaraman, S Keller, SP DenBaars, JS Speck, ...
Journal of crystal growth 324 (1), 163-167, 2011
632011
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
Z Chen, Y Pei, S Newman, R Chu, D Brown, R Chung, S Keller, ...
Applied Physics Letters 94 (11), 112108-112108-3, 2009
492009
The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
RB Chung, C Han, CC Pan, N Pfaff, JS Speck, SP DenBaars, S Nakamura
Applied Physics Letters 101 (13), 2012
482012
Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate
H Zhong, A Tyagi, NN Fellows, RB Chung, M Saito, K Fujito, JS Speck, ...
Electronics Letters 43 (15), 825-827, 2007
442007
Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates
KJ Vampola, NN Fellows, H Masui, SE Brinkley, M Furukawa, RB Chung, ...
physica status solidi (a) 206 (2), 200-202, 2009
372009
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
Z Chen, Y Pei, S Newman, D Brown, R Chung, S Keller, SP DenBaars, ...
Applied Physics Letters 94 (17), 171117-171117-3, 2009
362009
384 nm laser diode grown on a (202 1) semipolar relaxed AlGaN buffer layer
DA Haeger, EC Young, RB Chung, F Wu, NA Pfaff, M Tsai, K Fujito, ...
Applied Physics Letters 100 (16), 2012
352012
Electroluminescence characterization of (2021) InGaN/GaN light emitting diodes with various wavelengths
RB Chung, YD Lin, I Koslow, N Pfaff, H Ohta, J Ha, SP DenBaars, ...
Japanese Journal of Applied Physics 49 (7R), 070203, 2010
342010
High power and high efficiency blue InGaN Light emitting diodes on free-standing semipolar (3031) bulk GaN substrate
IL Koslow, J Sonoda, RB Chung, CC Pan, S Brinkley, H Ohta, ...
Japanese journal of applied physics 49 (8R), 080203, 2010
182010
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