Mikhail Baklanov
Mikhail Baklanov
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Cited by
Cited by
Low dielectric constant materials for microelectronics
K Maex, MR Baklanov, D Shamiryan, F Lacopi, SH Brongersma, ...
Journal of Applied Physics 93 (11), 8793-8841, 2003
Determination of pore size distribution in thin films by ellipsometric porosimetry
MR Baklanov, KP Mogilnikov, VG Polovinkin, FN Dultsev
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
Disorder-induced inhomogeneities of the superconducting state close to the superconductor-insulator transition
B Sacépé, C Chapelier, TI Baturina, VM Vinokur, MR Baklanov, ...
Physical review letters 101 (15), 157006, 2008
Fabrication of porogen residues free and mechanically robust low-k materials
AM Urbanowicz, P Verdonck, D Shamiryan, K Vanstreels, M Baklanov, ...
US Patent App. 12/831,935, 2011
Plasma processing of low-k dielectrics
MR Baklanov, JF de Marneffe, D Shamiryan, AM Urbanowicz, H Shi, ...
Journal of Applied Physics 113 (4), 4, 2013
Superinsulator and quantum synchronization
VM Vinokur, TI Baturina, MV Fistul, AY Mironov, MR Baklanov, C Strunk
Nature 452 (7187), 613-615, 2008
Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin films
TI Baturina, AY Mironov, VM Vinokur, MR Baklanov, C Strunk
Physical review letters 99 (25), 257003, 2007
Dielectric films for advanced microelectronics
M Baklanov, K Maex, M Green
John Wiley & Sons, 2007
Metal-organic framework ZIF-8 films as low-κ dielectrics in microelectronics
S Eslava, L Zhang, S Esconjauregui, J Yang, K Vanstreels, MR Baklanov, ...
Chemistry of Materials 25 (1), 27-33, 2013
Non-destructive characterisation of porous low-k dielectric films
MR Baklanov, KP Mogilnikov
Microelectronic Engineering 64 (1-4), 335-349, 2002
Pseudogap in a thin film of a conventional superconductor
B Sacepe, C Chapelier, TI Baturina, VM Vinokur, MR Baklanov, ...
Nature Communications 1 (1), 140, 2010
Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma
D Shamiryan, MR Baklanov, S Vanhaelemeersch, K Maex
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
Porous low dielectric constant materials for microelectronics
MR Baklanov, K Maex
Philosophical Transactions of the Royal Society A: Mathematical, Physical …, 2006
Advanced Interconnects for ULSI Technology
MR Baklanov, PS Ho, E Zschech
Challenges in the implementation of low-k dielectrics in the back-end of line
R Hoofman, G Verheijden, J Michelon, F Iacopi, Y Travaly, MR Baklanov, ...
Microelectronic Engineering 80, 337-344, 2005
F. lacopi, SH Brongersma, and ZS Yanovitskaya
K Maex, MR Baklanov, D Shamiryan
J. Appl. Phys 93 (11), 8793, 2003
Determination of Young’s modulus of porous low-k films by ellipsometric porosimetry
KP Mogilnikov, MR Baklanov
Electrochemical and solid-state letters 5 (12), F29, 2002
Quantum metallicity on the high-field side of the superconductor-insulator transition
TI Baturina, C Strunk, MR Baklanov, A Satta
Physical review letters 98 (12), 127003, 2007
Structural characterization of mesoporous organosilica films for ultralow-k dielectrics
FK de Theije, AR Balkenende, MA Verheijen, MR Baklanov, ...
The Journal of Physical Chemistry B 107 (18), 4280-4289, 2003
Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study
A Grill, V Patel, KP Rodbell, E Huang, MR Baklanov, KP Mogilnikov, ...
Journal of Applied Physics 94 (5), 3427-3435, 2003
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