| Low dielectric constant materials for microelectronics K Maex, MR Baklanov, D Shamiryan, F Lacopi, SH Brongersma, ... Journal of Applied Physics 93 (11), 8793-8841, 2003 | 1901 | 2003 |
| Determination of pore size distribution in thin films by ellipsometric porosimetry MR Baklanov, KP Mogilnikov, VG Polovinkin, FN Dultsev Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 631 | 2000 |
| Disorder-induced inhomogeneities of the superconducting state close to the superconductor-insulator transition B Sacépé, C Chapelier, TI Baturina, VM Vinokur, MR Baklanov, ... Physical review letters 101 (15), 157006, 2008 | 401 | 2008 |
| Fabrication of porogen residues free and mechanically robust low-k materials AM Urbanowicz, P Verdonck, D Shamiryan, K Vanstreels, M Baklanov, ... US Patent App. 12/831,935, 2011 | 343 | 2011 |
| Plasma processing of low-k dielectrics MR Baklanov, JF de Marneffe, D Shamiryan, AM Urbanowicz, H Shi, ... Journal of Applied Physics 113 (4), 4, 2013 | 331 | 2013 |
| Superinsulator and quantum synchronization VM Vinokur, TI Baturina, MV Fistul, AY Mironov, MR Baklanov, C Strunk Nature 452 (7187), 613-615, 2008 | 292 | 2008 |
| Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin films TI Baturina, AY Mironov, VM Vinokur, MR Baklanov, C Strunk Physical review letters 99 (25), 257003, 2007 | 260 | 2007 |
| Dielectric films for advanced microelectronics M Baklanov, K Maex, M Green John Wiley & Sons, 2007 | 251 | 2007 |
| Metal-organic framework ZIF-8 films as low-κ dielectrics in microelectronics S Eslava, L Zhang, S Esconjauregui, J Yang, K Vanstreels, MR Baklanov, ... Chemistry of Materials 25 (1), 27-33, 2013 | 243 | 2013 |
| Non-destructive characterisation of porous low-k dielectric films MR Baklanov, KP Mogilnikov Microelectronic Engineering 64 (1-4), 335-349, 2002 | 219 | 2002 |
| Pseudogap in a thin film of a conventional superconductor B Sacepe, C Chapelier, TI Baturina, VM Vinokur, MR Baklanov, ... Nature Communications 1 (1), 140, 2010 | 199 | 2010 |
| Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma D Shamiryan, MR Baklanov, S Vanhaelemeersch, K Maex Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 186 | 2002 |
| Porous low dielectric constant materials for microelectronics MR Baklanov, K Maex Philosophical Transactions of the Royal Society A: Mathematical, Physical …, 2006 | 158 | 2006 |
| Advanced Interconnects for ULSI Technology MR Baklanov, PS Ho, E Zschech | 150 | 2012 |
| Challenges in the implementation of low-k dielectrics in the back-end of line R Hoofman, G Verheijden, J Michelon, F Iacopi, Y Travaly, MR Baklanov, ... Microelectronic Engineering 80, 337-344, 2005 | 143 | 2005 |
| F. lacopi, SH Brongersma, and ZS Yanovitskaya K Maex, MR Baklanov, D Shamiryan J. Appl. Phys 93 (11), 8793, 2003 | 139 | 2003 |
| Determination of Young’s modulus of porous low-k films by ellipsometric porosimetry KP Mogilnikov, MR Baklanov Electrochemical and solid-state letters 5 (12), F29, 2002 | 135 | 2002 |
| Quantum metallicity on the high-field side of the superconductor-insulator transition TI Baturina, C Strunk, MR Baklanov, A Satta Physical review letters 98 (12), 127003, 2007 | 127 | 2007 |
| Structural characterization of mesoporous organosilica films for ultralow-k dielectrics FK de Theije, AR Balkenende, MA Verheijen, MR Baklanov, ... The Journal of Physical Chemistry B 107 (18), 4280-4289, 2003 | 127 | 2003 |
| Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study A Grill, V Patel, KP Rodbell, E Huang, MR Baklanov, KP Mogilnikov, ... Journal of Applied Physics 94 (5), 3427-3435, 2003 | 124 | 2003 |
Denis ShamiryanGeneral Manager, MAPPER LLCVerified email at mapperllc.ru
