Low dielectric constant materials for microelectronics K Maex, MR Baklanov, D Shamiryan, F Lacopi, SH Brongersma, ... Journal of Applied Physics 93 (11), 8793-8841, 2003 | 2003 | 2003 |
Determination of pore size distribution in thin films by ellipsometric porosimetry MR Baklanov, KP Mogilnikov, VG Polovinkin, FN Dultsev Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 667 | 2000 |
Fabrication of porogen residues free and mechanically robust low-k materials AM Urbanowicz, P Verdonck, D Shamiryan, K Vanstreels, M Baklanov, ... US Patent App. 12/831,935, 2011 | 480 | 2011 |
Disorder-Induced Inhomogeneities of the Superconducting State<? format?> Close to the Superconductor-Insulator Transition B Sacépé, C Chapelier, TI Baturina, VM Vinokur, MR Baklanov, ... Physical review letters 101 (15), 157006, 2008 | 444 | 2008 |
Plasma processing of low-k dielectrics MR Baklanov, JF de Marneffe, D Shamiryan, AM Urbanowicz, H Shi, ... Journal of Applied Physics 113 (4), 2013 | 362 | 2013 |
Superinsulator and quantum synchronization VM Vinokur, TI Baturina, MV Fistul, AY Mironov, MR Baklanov, C Strunk Nature 452 (7187), 613-615, 2008 | 303 | 2008 |
Metal-organic framework ZIF-8 films as low-κ dielectrics in microelectronics S Eslava, L Zhang, S Esconjauregui, J Yang, K Vanstreels, MR Baklanov, ... Chemistry of Materials 25 (1), 27-33, 2013 | 287 | 2013 |
Dielectric Films for Advanced Microelectronics M Baklanov, M Green, K Maex | 278 | 2007 |
Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin films TI Baturina, AY Mironov, VM Vinokur, MR Baklanov, C Strunk Physical review letters 99 (25), 257003, 2007 | 269 | 2007 |
Non-destructive characterisation of porous low-k dielectric films MR Baklanov, KP Mogilnikov Microelectronic Engineering 64 (1-4), 335-349, 2002 | 224 | 2002 |
Pseudogap in a thin film of a conventional superconductor B Sacépé, C Chapelier, TI Baturina, VM Vinokur, MR Baklanov, ... Nature Communications 1 (1), 140, 2010 | 218 | 2010 |
Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma D Shamiryan, MR Baklanov, S Vanhaelemeersch, K Maex Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 200 | 2002 |
Porous low dielectric constant materials for microelectronics MR Baklanov, K Maex Philosophical Transactions of the Royal Society A: Mathematical, Physical …, 2006 | 175 | 2006 |
Advanced interconnects: materials, processing, and reliability MR Baklanov, C Adelmann, L Zhao, S De Gendt ECS Journal of Solid State Science and Technology 4 (1), Y1-Y4, 2015 | 158 | 2015 |
F. Iacopi, SH Brongersma, and ZS Yanovitskaya K Maex, MR Baklanov, D Shamiryan J. Appl. Phys 93 (11), 8793-8836, 2003 | 153 | 2003 |
Challenges in the implementation of low-k dielectrics in the back-end of line R Hoofman, G Verheijden, J Michelon, F Iacopi, Y Travaly, MR Baklanov, ... Microelectronic Engineering 80, 337-344, 2005 | 151 | 2005 |
Determination of Young’s modulus of porous low-k films by ellipsometric porosimetry KP Mogilnikov, MR Baklanov Electrochemical and solid-state letters 5 (12), F29, 2002 | 146 | 2002 |
Advanced interconnects for ULSI technology M Baklanov, PS Ho, E Zschech John Wiley & Sons, 2012 | 145 | 2012 |
Magnetic field-induced dissipation-free state in superconducting nanostructures R Córdoba, TI Baturina, J Sesé, A Yu Mironov, JM De Teresa, MR Ibarra, ... Nature communications 4 (1), 1437, 2013 | 141 | 2013 |
Quantum metallicity on the high-field side of the superconductor-insulator transition TI Baturina, C Strunk, MR Baklanov, A Satta Physical review letters 98 (12), 127003, 2007 | 136 | 2007 |