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Hao-Yu Lan
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Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity
HY Lan, YH Hsieh, ZY Chiao, D Jariwala, MH Shih, TJ Yen, O Hess, YJ Lu
Nano Letters 21 (7), 3083-3091, 2021
812021
High-speed integrated micro-LED array for visible light communication
HY Lan, IC Tseng, YH Lin, GR Lin, DW Huang, CH Wu
Optics letters 45 (8), 2203-2206, 2020
562020
752-MHz modulation bandwidth of high-speed blue micro light-emitting diodes
HY Lan, IC Tseng, HY Kao, YH Lin, GR Lin, CH Wu
IEEE Journal of Quantum Electronics 54 (5), 1-6, 2018
422018
Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices
CC Chiang, HY Lan, CS Pang, J Appenzeller, Z Chen
IEEE Electron Device Letters 43 (2), 319-322, 2021
332021
Plasmon-enhanced solar-driven hydrogen evolution using titanium nitride metasurface broadband absorbers
MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HW Howard Lee, ...
Acs Photonics 8 (11), 3125-3132, 2021
322021
Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOxInterfacial Layer
HY Lan, VP Oleshko, AV Davydov, J Appenzeller, Z Chen
IEEE Transactions on Electron Devices 70 (4), 2067-2074, 2023
72023
Dielectric Interface Engineering for High-Performance Monolayer MoS₂ Transistors via hBN Interfacial Layer and Ta Seeding
HY Lan, J Appenzeller, Z Chen
2022 International Electron Devices Meeting (IEDM), 7.7. 1-7.7. 4, 2022
52022
Characteristics of blue GaN/InGaN quantum-well light-emitting transistor
HY Lan, IC Tseng, YH Lin, SW Chang, CH Wu
IEEE Electron Device Letters 41 (1), 91-94, 2019
52019
High-Performance Complementary Circuits from Two-Dimensional MoTe2
J Cai, Z Sun, P Wu, R Tripathi, HY Lan, J Kong, Z Chen, J Appenzeller
Nano Letters 23 (23), 10939-10945, 2023
12023
Design and Process Co-Optimization of 2-D Monolayer Transistors via Machine Learning
CC Chiang, HY Lan, L Liu, YP Chen, D Zemlyanov, J Appenzeller, ...
IEEE Transactions on Electron Devices, 2023
12023
Plasmon-enhanced solar-driven hydrogen evolution using plasmonic metasurface broadband absorbers
TY Peng, MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HWH Lee, ...
Conference on Lasers and Electro-Optics/Pacific Rim, P_CM16_13, 2022
12022
Reliability of High-Performance Monolayer MoS2 Transistors on Scaled High-κ HfO2
Z Chen, HY Lan, SH Yang, R Tripathi, J Appenzeller
2024
Unconventional Spin Hall Effect in Low Symmetry Semimetal for Large Spin-Orbit Readout Unit
R Tripathi, HY Lan, P Debashis, H Li, M DC, X Liu, J Cai, ST Konakanchi, ...
Bulletin of the American Physical Society, 2024
2024
Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727 μA/μm Ion and 490 μS/ μm gmax via Hybrid Charge Transfer and Molecular Doping
HY Lan, R Tripathi, X Liu, J Appenzeller, Z Chen
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Broadband Plasmonic Perfect Absorbers using Titanium Nitride Metasurface for Efficient Solar Hydrogen Generation
MJ Yu, CL Chang, HY Lan, ZY Chiao, YC Chen, HW Howard Lee, ...
American Chemical Society (ACS), 2021
2021
Visible plasmonic perfect absorber based on titanium nitride metamaterial
T Watanabe, MJ Yu, HY Lan, M Haraguchi, YJ Lu
Plasmonics: Design, Materials, Fabrication, Characterization, and …, 2020
2020
Lithography method
HY Lan, PC Cheng, CJ Huang, TC Fu, TY Lee
US Patent 10684561B2, 2020
2020
Characterization of blue InGaN/GaN quantum-well heterojunction bipolar light emitting transistors
IC Tseng, HY Lan, CH Wu
2017 International Conference on Electron Devices and Solid-State Circuits …, 2017
2017
Design, Fabrication, and Characterization of High-Speed Blue Light-Emitting Diodes and Light-Emitting Transistors
HY Lan
National Taiwan University, 2017
2017
Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727 µA/µm ION and 490 µS/µm gmax via Hybrid Charge Transfer and Molecular Doping
HY Lan, R Tripathi, X Liu, J Appenzeller, Z Chen
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Articles 1–20