Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk A Laturia, ML Van de Put, WG Vandenberghe
npj 2D Materials and Applications 2 (1), 6, 2018
725 2018 Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview G Gaddemane, WG Vandenberghe, ML Van de Put, S Chen, S Tiwari, ...
98 2018 InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ...
Journal of Applied Physics 115 (18), 2014
58 2014 Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
npj 2D Materials and Applications 5 (1), 54, 2021
56 2021 Identification of two-dimensional layered dielectrics from first principles MR Osanloo, ML Van de Put, A Saadat, WG Vandenberghe
Nature communications 12 (1), 5051, 2021
55 2021 Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study A Kramer, ML Van de Put, CL Hinkle, WG Vandenberghe
npj 2D Materials and Applications 4 (1), 10, 2020
43 2020 Master-equation study of quantum transport in realistic semiconductor devices including electron-phonon and surface-roughness scattering PB Vyas, ML Van de Put, MV Fischetti
Physical Review Applied 13 (1), 014067, 2020
41 2020 Critical behavior of the ferromagnets , and and the antiferromagnet : A detailed first-principles study S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
Physical Review B 103 (1), 014432, 2021
40 2021 Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal … G Gaddemane, S Gopalan, ML Van de Put, MV Fischetti
Journal of computational electronics 20, 49-59, 2021
38 2021 Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene G Gaddemane, WG Vandenberghe, ML Van de Put, E Chen, MV Fischetti
Journal of Applied Physics 124 (4), 2018
35 2018 Tensile strained Ge tunnel field-effect transistors: k· p material modeling and numerical device simulation KH Kao, AS Verhulst, M Van de Put, WG Vandenberghe, B Soree, ...
Journal of Applied Physics 115 (4), 2014
33 2014 Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials ML Van de Put, MV Fischetti, WG Vandenberghe
Computer Physics Communications 244, 156-169, 2019
31 2019 Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors MR Osanloo, A Saadat, ML Van de Put, A Laturia, WG Vandenberghe
Nanoscale 14 (1), 157-165, 2022
27 2022 Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy S Tiwari, J Vanherck, ML Van de Put, WG Vandenberghe, B Sorée
Physical Review Research 3 (4), 043024, 2021
27 2021 Uniform strain in heterostructure tunnel field-effect transistors D Verreck, AS Verhulst, ML Van de Put, B Sorée, N Collaert, A Mocuta, ...
IEEE electron device letters 37 (3), 337-340, 2016
26 2016 Perspective of tunnel-FET for future low-power technology nodes AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ...
2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014
26 2014 Efficient solution of the Wigner-Liouville equation using a spectral decomposition of the force field ML Van de Put, B Sorée, W Magnus
Journal of Computational Physics 350, 314-325, 2017
25 2017 “Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth? MV Fischetti, PD Yoder, MM Khatami, G Gaddemane, ML Van De Put
Applied Physics Letters 114 (22), 2019
24 2019 Channel length scaling limit for LDMOS field-effect transistors: Semi-classical and quantum analysis A Saadat, PB Vyas, ML Van de Put, MV Fischetti, H Edwards, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
23 2020 Monte Carlo Study of Electronic Transport in Monolayer InSe S Gopalan, G Gaddemane, ML Van de Put, MV Fischetti
Materials 12 (24), 4210, 2019
22 2019