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Julien Buckley
Julien Buckley
CEA-LETI
Verified email at cea.fr
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Cited by
Year
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ...
Scientific reports 3 (1), 2929, 2013
1662013
Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
1082011
Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?
T Ernst, L Duraffourg, C Dupre, E Bernard, P Andreucci, S Becu, E Ollier, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
862008
Ferrocene and porphyrin monolayers on Si (100) surfaces: preparation and effect of linker length on electron transfer
K Huang, F Duclairoir, T Pro, J Buckley, G Marchand, E Martinez, ...
ChemPhysChem 10 (6), 963-971, 2009
752009
Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
J Buckley, B De Salvo, D Deleruyelle, M Gely, G Nicotra, S Lombardo, ...
Microelectronic Engineering 80, 210-213, 2005
672005
Engineering of'Conduction band-Crested Barriers' or'Dielectric Constant-Crested Barriers' in view of their application of floating-gate non-volatile memory devices
J Buckley, B DeSalvo, G Ghibaudo, M Gely, JF Damlencourt, AM Papon
Silicon Nanoelectronics Workshop, 2004
632004
Accurate analysis of parasitic current overshoot during forming operation in RRAMs
S Tirano, L Perniola, J Buckley, J Cluzel, V Jousseaume, C Muller, ...
Microelectronic engineering 88 (7), 1129-1132, 2011
542011
Role of Ti and Pt electrodes on resistance switching variability of HfO2-based resistive random access memory
T Cabout, J Buckley, C Cagli, V Jousseaume, JF Nodin, B De Salvo, ...
Thin Solid Films 533, 19-23, 2013
462013
Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices
J Buckley, B De Salvo, G Ghibaudo, M Gely, JF Damlencourt, F Martin, ...
Solid-state electronics 49 (11), 1833-1840, 2005
442005
Low-Frequency Noise in Oxide-Based Resistive Random Access Memory Cells
Z Fang, HY Yu, JA Chroboczek, G Ghibaudo, J Buckley, B DeSalvo, X Li, ...
IEEE transactions on electron devices 59 (3), 850-853, 2012
402012
Comparative study of non-polar switching behaviors of NiO- and HfO2-based Oxide Resistive-RAMs
V Jousseaume, A Fantini, JF Nodin, C Guedj, A Persico, J Buckley, ...
2010 IEEE International Memory Workshop, 1-4, 2010
402010
Investigation of hybrid molecular/silicon memories with redox-active molecules acting as storage media
T Pro, J Buckley, K Huang, A Calborean, M GÉly, G Delapierre, ...
IEEE Transactions on Nanotechnology 8 (2), 204-213, 2008
352008
Investigation of HfO2 and ZrO2 for resistive random access memory applications
A Salaün, H Grampeix, J Buckley, C Mannequin, C Vallée, P Gonon, ...
Thin Solid Films 525, 20-27, 2012
302012
Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications
G Molas, M Bocquet, J Buckley, JP Colonna, L Masarotto, H Grampeix, ...
2007 IEEE International Electron Devices Meeting, 453-456, 2007
272007
Current conduction model for oxide-based resistive random access memory verified by low-frequency noise analysis
Z Fang, HY Yu, WJ Fan, G Ghibaudo, J Buckley, B DeSalvo, X Li, ...
IEEE transactions on electron devices 60 (3), 1272-1275, 2013
262013
Quantum point contact model of filamentary conduction in resistive switching memories
X Lian, S Long, C Cagli, J Buckley, E Miranda, M Liu, J Suñe
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
212012
Recent results on organic-based molecular memories
B De Salvo, J Buckley, D Vuillaume
Current applied physics 11 (2), e49-e57, 2011
202011
Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories
G Molas, M Bocquet, J Buckley, H Grampeix, M Gély, JP Colonna, ...
Solid-state electronics 51 (11-12), 1540-1546, 2007
202007
From atomistic to device level investigation of hybrid redox molecular/silicon field-effect memory devices
T Pro, J Buckley, R Barattin, A Calborean, V Aiello, G Nicotra, K Huang, ...
IEEE transactions on nanotechnology 10 (2), 275-283, 2010
162010
In-depth investigation of Hf-based high-k dielectrics as storage layer of charge-trap NVMs
J Buckley, M Bocquet, G Molas, M Gely, P Brianceau, N Rochat, ...
2006 International Electron Devices Meeting, 1-4, 2006
162006
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