S. T. Picraux
S. T. Picraux
Verified email at lanl.gov
Title
Cited by
Cited by
Year
Materials analysis by ion channeling: submicron crystallography
LC Feldman, JW Mayer, STA Picraux
Academic Press, 2012
15212012
Materials analysis by ion channeling: submicron crystallography
LC Feldman, JW Mayer, STA Picraux
Academic Press, 2012
15212012
Anisotropic swelling and fracture of silicon nanowires during lithiation
XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ...
Nano letters 11 (8), 3312-3318, 2011
6302011
In situ atomic-scale imaging of electrochemical lithiation in silicon
XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749-756, 2012
4522012
Ultrafast electrochemical lithiation of individual Si nanowire anodes
XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ...
Nano letters 11 (6), 2251-2258, 2011
3722011
Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes
B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ...
ACS nano 7 (2), 1437-1445, 2013
3672013
Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
JW Mayer, L Eriksson, ST Picraux, JA Davies
Canadian Journal of Physics 46 (6), 663-673, 1968
3461968
Reversible nanopore formation in Ge nanowires during lithiation–delithiation cycling: An in situ transmission electron microscopy study
XH Liu, S Huang, ST Picraux, J Li, T Zhu, JY Huang
Nano letters 11 (9), 3991-3997, 2011
3422011
Epitaxial growth of rare‐earth silicides on (111) Si
JA Knapp, ST Picraux
Applied physics letters 48 (7), 466-468, 1986
3061986
Ion beams in silicon processing and characterization
E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ...
Journal of applied physics 81 (10), 6513-6561, 1997
3011997
Lotus effect amplifies light-induced contact angle switching
R Rosario, D Gust, AA Garcia, M Hayes, JL Taraci, T Clement, JW Dailey, ...
The Journal of Physical Chemistry B 108 (34), 12640-12642, 2004
2672004
Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson
Applied physics letters 46 (10), 967-969, 1985
2491985
Formation of SiC in silicon by ion implantation
JA Borders, ST Picraux, W Beezhold
Applied Physics Letters 18 (11), 509-511, 1971
2291971
Critical stresses for Si x Ge 1− x strained-layer plasticity
JY Tsao, BW Dodson, ST Picraux, DM Cornelison
Physical review letters 59 (21), 2455, 1987
2191987
Role of integrated lateral stress in surface deformation of He‐implanted surfaces
EP EerNisse, ST Picraux
Journal of Applied Physics 48 (1), 9-17, 1977
2081977
Are nanoporous materials radiation resistant?
EM Bringa, JD Monk, A Caro, A Misra, L Zepeda-Ruiz, M Duchaineau, ...
Nano letters 12 (7), 3351-3355, 2012
1932012
Defect trapping of ion‐implanted deuterium in Fe
SM Myers, ST Picraux, RE Stoltz
Journal of Applied Physics 50 (9), 5710-5719, 1979
1861979
Precipitation and relaxation in strained Si1−yCy/Si heterostructures
JW Strane, HJ Stein, SR Lee, ST Picraux, JK Watanabe, JW Mayer
Journal of applied physics 76 (6), 3656-3668, 1994
1721994
Partitioning of ion-induced surface and bulk displacements
DK Brice, JY Tsao, ST Picraux
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1989
1711989
Metastable SiGeC formation by solid phase epitaxy
JW Strane, HJ Stein, SR Lee, BL Doyle, ST Picraux, JW Mayer
Applied physics letters 63 (20), 2786-2788, 1993
1591993
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Articles 1–20