Dingkun Ren

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Citations	362	308
h-index	11	9
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D.L. Huffaker, Diana Huffaker, Diana L...Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLAVerified email at uta.edu
Zixuan RongMaster Student, University of California, Los AngelesVerified email at ucla.edu
Alan C FarrellUCLAVerified email at ngc.com
Hyunseok KimUniversity of Illinois Urbana-ChampaignVerified email at illinois.edu
BAOLAI LIANGUCLAVerified email at cnsi.ucla.edu
Siddharth SomasundaramMassachusetts Institute of TechnologyVerified email at mit.edu
Benjamin S. WilliamsProfessor of Electrical and Computer Engineering Univeristy of California Los AngelesVerified email at ucla.edu
Bor-Chau JuangUniversity of California, Los AngelesVerified email at ucla.edu
Xiao MengLumentumVerified email at lumentum.com
MOHAMMAD SHAHILIUCLAVerified email at ucla.edu
Ting-Yuan ChangUniversity of California, Los AngelesVerified email at g.ucla.edu
Arion ChatziioannouProfessor of Molecular and Medical Pharmacology, University of California, Los AngelesVerified email at ucla.edu
Pradeep SenanayakeUniversity of California Los AngelesVerified email at ucla.edu
Adam ScofieldRockley PhotonicsVerified email at rockleyphotonics.com
Dr. R. B. LaghumavarapuStaff Research Associate-III, University of California Los AngelesVerified email at ucla.edu
Deniz TuranUniversity of California Los AngelesVerified email at g.ucla.edu
David ProutAssistant ResearcherVerified email at mednet.ucla.edu
Brian T. ZutterSandia National LaboratoriesVerified email at sandia.gov
WILLIAM A HUBBARDNanoElectronic Imaging, Inc.Verified email at g.ucla.edu
B.C. ReganProfessor of Physics and Astronomy, University of California, Los AngelesVerified email at physics.ucla.edu

Dingkun Ren

University of California, Los Angeles

Verified email at ucla.edu

Compound semiconductors LEDs photodetectors nanotechnology


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Room-temperature mid-wavelength infrared InAsSb nanowire photodetector arrays with Al2O3 passivation D Ren, KM Azizur-Rahman, Z Rong, BC Juang, S Somasundaram, ... Nano Letters 19 (5), 2793-2802, 2019	67	2019
InGaAs-GaAs Nanowire Avalanche Photodiodes Toward Single Photon Detection in Free-Running Mode AC Farrell, X Meng, D Ren*, H Kim, P Senanayake, NY Hsieh, Z Rong, ... Nano Letters 19 (1), 582-590, 2018	49	2018
Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with PN Heterojunctions D Ren, X Meng, Z Rong, M Cao, AC Farrell, S Somasundaram, ... Nano Letters 18 (12), 7901–7908, 2018	48	2018
Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium H Kim, D Ren, AC Farrell, DL Huffaker Nanotechnology 29 (8), 085601, 2018	24	2018
Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates D Ren, AC Farrell, BS Williams, DL Huffaker Nanoscale 9 (24), 8220-8228, 2017	23	2017
Feasibility of Tracking Multiple Single-Cell Properties with Impedance Spectroscopy D Ren, CO Chui ACS Sensors 3 (5), 1005-1015, 2018	18	2018
Feasibility of achieving high detectivity at short-and mid-wavelength infrared using nanowire-plasmonic photodetectors with pn heterojunctions D Ren, Z Rong, KM Azizur-Rahman, S Somasundaram, M Shahili, ... Nanotechnology 30 (4), 044002, 2018	16	2018
Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model D Ren, AC Scofield, AC Farrell, Z Rong, MA Haddad, RB Laghumavarapu, ... Nanoscale 10 (16), 7792-7802, 2018	16	2018
Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 2.5 µm D Ren, AC Farrell, DL Huffaker Optical Materials Express 8 (4), 1075-1081, 2018	16	2018
A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires D Ren, Z Rong, S Somasundaram, KM Azizur-Rahman, B Liang, ... Nanotechnology 29 (50), 504003, 2018	13	2018
Self-assembly of tensile-strained Ge quantum dots on InAlAs (111) A KE Sautter, CF Schuck, TA Garrett, AE Weltner, KD Vallejo, D Ren, ... Journal of Crystal Growth 533, 125468, 2020	12	2020
Selective-area InAsSb Nanowires on InP for 3–5 μm Mid-wavelength Infrared Optoelectronics D Ren, AC Farrell, DL Huffaker MRS Advances 2 (58-59), 3565-3570, 2017	11	2017
Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots Q Yuan, J Liu, B Liang, D Ren, Y Wang, Y Guo, S Wang, G Fu, YI Mazur, ... Journal of Luminescence 218, 116870, 2020	9	2020
Feasibility of room-temperature mid-wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers D Ren, Z Rong, C Minh, AC Farrell, X Meng, DL Huffaker Proceedings of SPIE 10531, 105310Y, 2018	7	2018
Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb BC Juang, B Liang, D Ren, DL Prout, AF Chatziioannou, DL Huffaker Crystals 7 (10), 313, 2017	7	2017
High-efficiency Ultrafast Optical-to-Electrical Converters Based on InAs Nanowire-Plasmonic Arrays D REN, Z RONG, H KIM, D TURAN, DL HUFFAKER Optics Letters 44 (19), 4666-4669, 2019	6	2019
Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al 2 O 3 passivation A Chen, BC Juang, D Ren, B Liang, D Prout, AF Chatziioannou, ... Japanese Journal of Applied Physics 58, 090907, 2019	5	2019
Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection BC Juang, A Chen, D Ren, B Liang, DL Prout, AF Chatziioannou, ... Advanced Optical Materials 7 (11), 1900107, 2019	4	2019
Numerical analysis of nanowire surface recombination using a three-dimensional transient model D Ren, Z Rong, B Liang, DL Huffaker Proceedings of SPIE 10543, 1054306, 2018	3	2018
Mapping Charge Recombination and the Effect of Point-Defect Insertion in Nanowire Heterojunctions BT Zutter, H Kim, WA Hubbard, D Ren, M Mecklenburg, D Huffaker, ... Physical Review Applied 16 (4), 044030, 2021	2	2021

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