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Samuel L. Lenney
Samuel L. Lenney
Geverifieerd e-mailadres voor tufts.edu
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Characterization of tellurium and silicon as n-type dopants for GaAsBi
MA Stevens, S Lenney, J McElearney, KA Grossklaus, TE Vandervelde
Semiconductor Science and Technology 35 (10), 105006, 2020
62020
Investigating optical and electronic properties of GaAsBi for photovoltaics
SL Lenney
Tufts University, 2020
12020
Optical property comparison of GaAsBi and TlGaAs measured by variable angle spectroscopic ellipsometry
S Lenney, K Grossklaus, M Stevens, TE Vandervelde
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and …, 2019
12019
Examining the effect of Tl content on the optical, electrical, and structural properties of TlGaAs films
K Grossklaus, J McElearney, M Stevens, S Lenney, T Vandervelde
APS March Meeting Abstracts 2019, S33. 001, 2019
2019
Examining the effects of changing film composition and temperature on the optical properties of GaAsBi epitaxial films
S Lenney, M Stevens, K Grossklaus, T Vandervelde
APS March Meeting Abstracts 2019, S33. 003, 2019
2019
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Artikelen 1–5