| Thin-film thermoelectric device and fabrication method of same R Venkatasubramanian US Patent 6,300,150, 2001 | 258 | 2001 |
| Effect of Pressure and Temperature on Structural Stability of MoS2 N Bandaru, RS Kumar, D Sneed, O Tschauner, J Baker, D Antonio, ... The Journal of Physical Chemistry C 118 (6), 3230-3235, 2014 | 129 | 2014 |
| Wide gap II‐VI superlattices of ZnSe‐Zn1−xMnxSe LA Kolodziejski, RL Gunshor, TC Bonsett, R Venkatasubramanian, ... Applied physics letters 47 (2), 169-171, 1985 | 119 | 1985 |
| (100)‐oriented wide gap II–VI superlattices LA Kolodziejski, RL Gunshor, R Venkatasubramanian, TC Bonsett, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 57 | 1986 |
| Low temperature chemical vapor deposition and etching apparatus and method R Venkatasubramanian US Patent 6,071,351, 2000 | 35 | 2000 |
| Structural stability of WS 2 under high pressure N Bandaru, RS Kumar, J Baker, O Tschauner, T Hartmann, Y Zhao, ... International Journal of Modern Physics B 28 (25), 1450168, 2014 | 30 | 2014 |
| Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN I Stanley, G Coleiny, R Venkat Journal of crystal growth 251 (1-4), 23-28, 2003 | 28 | 2003 |
| Heuristic rules for group IV dopant site selection in III–V compounds R Venkatasubramanian, DL Dorsey, K Mahalingam Journal of crystal growth 175, 224-228, 1997 | 24 | 1997 |
| Incorporation processes in MBE growth of ZnSe R Venkatasubramanian, N Otsuka, J Qiu, LA Kolodziejski, RL Gunshor Journal of Crystal Growth 95 (1-4), 533-537, 1989 | 21 | 1989 |
| Modeling of porous alumina template formation under constant current conditions R Kanakala, PV Singaraju, R Venkat, B Das Journal of the Electrochemical Society 152 (1), J1, 2004 | 20 | 2004 |
| Energy efficient RGBW pixel configuration for light-emitting displays N Shlayan, R Venkat, P Ginobbi, AK Singh Journal of Display Technology 5 (11), 418-424, 2009 | 18 | 2009 |
| MBE growth of compound semiconductors: Part I. Stochastic modeling R Venkatasubramanian Journal of materials research 7 (5), 1221-1234, 1992 | 18 | 1992 |
| Analytical expressions for tunneling time through single and double barrier structures P Thanikasalam, R Venkatasubramanian, M Cahay IEEE journal of quantum electronics 29 (9), 2451-2458, 1993 | 17 | 1993 |
| Molecular‐beam epitaxial growth surface roughening kinetics of Ge (001): A theoretical study R Venkatasubramanian, DL Dorsey Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 17 | 1993 |
| Growth dynamics of InGaAs by MBE: process simulation and theoretical analysis G Colayni, R Venkat Journal of crystal growth 211 (1-4), 21-26, 2000 | 16 | 2000 |
| Structural, electrical, and thermoelectric properties of CrSi2 thin films M Abd El Qader, R Venkat, R Kumar, T Hartmann, P Ginobbi, N Newman, ... Thin Solid Films 545, 100-105, 2013 | 15 | 2013 |
| A model for thermal growth of ultrathin silicon dioxide in O/sub 2/ambient: a rate equation approach S Gorantla, S Muthuvenkatraman, R Venkat IEEE Transactions on Electron Devices 45 (1), 336-338, 1998 | 15 | 1998 |
| MBE growth of compound semiconductors: Part II. Applications of the stochastic model R Venkatasubramanian Journal of materials research 7 (5), 1235-1242, 1992 | 15 | 1992 |
| Model for porous alumina template formation: constant voltage anodization P Singaraju, R Venkat, R Kanakala, B Das The European Physical Journal-Applied Physics 35 (2), 107-111, 2006 | 14 | 2006 |
| Comparison of time domain reflectometry performance factors for several dielectric geometries: Theory and experiments SV Maheshwarla, R Venkatasubramanian, RF Boehm Water Resources Research 31 (8), 1927-1933, 1995 | 14 | 1995 |
