Krishna Saraswat
Krishna Saraswat
Professor of Electrical Engineering, Stanford University
Verified email at stanford.edu - Homepage
Title
Cited by
Cited by
Year
3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
K Banerjee, SJ Souri, P Kapur, KC Saraswat
Proceedings of the IEEE 89 (5), 602-633, 2001
12312001
Interconnect limits on gigascale integration (GSI) in the 21st century
JA Davis, R Venkatesan, A Kaloyeros, M Beylansky, SJ Souri, K Banerjee, ...
Proceedings of the IEEE 89 (3), 305-324, 2001
7872001
Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna
L Tang, SE Kocabas, S Latif, AK Okyay, DS Ly-Gagnon, KC Saraswat, ...
Nature Photonics 2 (4), 226-229, 2008
7352008
Germanium nanowire field-effect transistors with and high-κ gate dielectrics
D Wang, Q Wang, A Javey, R Tu, H Dai, H Kim, PC McIntyre, ...
Applied Physics Letters 83 (12), 2432-2434, 2003
5852003
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and≪ 60mV/dec subthreshold slope
T Krishnamohan, D Kim, S Raghunathan, K Saraswat
2008 IEEE International Electron Devices Meeting, 1-3, 2008
5622008
Dopant segregation in polycrystalline silicon
MM Mandurah, KC Saraswat, CR Helms, TI Kamins
Journal of applied physics 51 (11), 5755-5763, 1980
4801980
Effect of scaling of interconnections on the time delay of VLSI circuits
KC Saraswat, F Mohammadi
IEEE Transactions on Electron Devices 29 (4), 645-650, 1982
4501982
Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides
DB Kao, JP Mcvittie, WD Nix, KC Saraswat
IEEE transactions on electron devices 35 (1), 25-37, 1988
4351988
Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric
CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat
IEEE Electron Device Letters 23 (8), 473-475, 2002
4222002
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
4142008
Achieving direct band gap in germanium through integration of Sn alloying and external strain
S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat
Journal of Applied Physics 113 (7), 073707, 2013
3702013
Activation and diffusion studies of ion-implanted and dopants in germanium
CO Chui, K Gopalakrishnan, PB Griffin, JD Plummer, KC Saraswat
Applied physics letters 83 (16), 3275-3277, 2003
3612003
Three-dimensional integration of nanotechnologies for computing and data storage on a single chip
MM Shulaker, G Hills, RS Park, RT Howe, K Saraswat, HSP Wong, S Mitra
Nature 547 (7661), 74-78, 2017
3352017
Thermal/microwave remote plasma multiprocessing reactor and method of use
MM Moslehi, KC Saraswat
US Patent 4,913,929, 1990
3231990
Electrical and materials properties of gate dielectrics grown by atomic layer chemical vapor deposition
CM Perkins, BB Triplett, PC McIntyre, KC Saraswat, S Haukka, ...
Applied Physics Letters 78 (16), 2357-2359, 2001
3102001
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
CD English, G Shine, VE Dorgan, KC Saraswat, E Pop
Nano letters 16 (6), 3824-3830, 2016
3042016
Two-dimensional thermal oxidation of silicon—I. Experiments
DB Kao, JP McVittie, WD Nix, KC Saraswat
IEEE Transactions on Electron Devices 34 (5), 1008-1017, 1987
2951987
Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications
V Subramanian, M Toita, NR Ibrahim, SJ Souri, KC Saraswat
IEEE Electron Device Letters 20 (7), 341-343, 1999
2911999
Effective dark current suppression with asymmetric MSM photodetectors in group IV semiconductors
CO Chui, AK Okyay, KC Saraswat
IEEE Photonics Technology Letters 15 (11), 1585-1587, 2003
288*2003
The effect of fluorine in silicon dioxide gate dielectrics
PJ Wright, KC Saraswat
IEEE Transactions on Electron Devices 36 (5), 879-889, 1989
2871989
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