| An extended hardness limit in bulk nanoceramics JA Wollmershauser, BN Feigelson, EP Gorzkowski, CT Ellis, R Goswami, ... Acta Materialia 69, 9-16, 2014 | 189 | 2014 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 162 | 2017 |
| A study of 13C hyperfine structure in the EPR of nickel-nitrogen-containing centres in diamond and correlation with their optical properties VA Nadolinny, AP Yelisseyev, JM Baker, ME Newton, DJ Twitchen, ... Journal of Physics: Condensed Matter 11 (38), 7357, 1999 | 162 | 1999 |
| Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ... Journal of crystal growth 350 (1), 21-26, 2012 | 131 | 2012 |
| Below the hall–petch limit in nanocrystalline ceramics H Ryou, JW Drazin, KJ Wahl, SB Qadri, EP Gorzkowski, BN Feigelson, ... ACS nano 12 (4), 3083-3094, 2018 | 130 | 2018 |
| Activation of Mg implanted in GaN by multicycle rapid thermal annealing TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ... Electronics Letters 50 (3), 197-198, 2014 | 111 | 2014 |
| Characterization of nitrogen doped chemical vapor deposited single crystal diamond before and after high pressure, high temperature annealing SJ Charles, JE Butler, BN Feygelson, ME Newton, DL Carroll, JW Steeds, ... physica status solidi (a) 201 (11), 2473-2485, 2004 | 106 | 2004 |
| Effect of HPHT annealing on the photoluminescence of synthetic diamonds grown in the Fe–Ni–C system A Yelisseyev, S Lawson, I Sildos, A Osvet, V Nadolinny, B Feigelson, ... Diamond and related materials 12 (12), 2147-2168, 2003 | 74 | 2003 |
| EPR study of the transformations in nickel containing centres at heated synthetic diamonds VA Nadolinny, AP Yelisseyev, OP Yuryeva, BN Feygelson Applied Magnetic Resonance 12 (4), 543-554, 1997 | 72 | 1997 |
| Spectroscopic study of HPHT synthetic diamonds, as grown at 1500 C A Yelisseyev, Y Babich, V Nadolinny, D Fisher, B Feigelson Diamond and related materials 11 (1), 22-37, 2002 | 62 | 2002 |
| Symmetric multicycle rapid thermal annealing: Enhanced activation of implanted dopants in GaN JD Greenlee, BN Feigelson, TJ Anderson, JK Hite, KD Hobart, FJ Kub ECS Journal of Solid State Science and Technology 4 (9), P382, 2015 | 61 | 2015 |
| Selective p-type doping of GaN: Si by Mg ion implantation and multicycle rapid thermal annealing MJ Tadjer, BN Feigelson, JD Greenlee, JA Freitas, TJ Anderson, JK Hite, ... ECS Journal of Solid State Science and Technology 5 (2), P124, 2015 | 58 | 2015 |
| Spatial distribution of impurity defects in synthetic diamonds obtained by the BARS technology A Yelisseyev, V Nadolinny, B Feigelson, S Terentyev, S Nosukhin Diamond and Related Materials 5 (10), 1113-1117, 1996 | 55 | 1996 |
| Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties JD Greenlee, BN Feigelson, TJ Anderson, MJ Tadjer, JK Hite, MA Mastro, ... Journal of Applied Physics 116 (6), 2014 | 46 | 2014 |
| Method of forming graphene on a surface FJ Kub, T Anderson, BN Feygelson US Patent 8,501,531, 2013 | 45 | 2013 |
| Nitrogen aggregation and linear growth rate in HPHT synthetic diamonds YV Babich, BN Feigelson, AP Yelisseyev Diamond and related materials 13 (10), 1802-1806, 2004 | 43 | 2004 |
| Mechanisms of nitrogen aggregation in nickel-and cobalt-containing synthetic diamonds VA Nadolinny, AP Yelisseyev, JM Baker, DJ Twitchen, ME Newton, ... Diamond and Related Materials 9 (3-6), 883-886, 2000 | 43 | 2000 |
| Vertical GaN junction barrier Schottky diodes AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ... ECS Journal of Solid State Science and Technology 6 (1), Q10, 2016 | 42 | 2016 |
| Improved vertical GaN Schottky diodes with ion implanted junction termination extension TJ Anderson, JD Greenlee, BN Feigelson, JK Hite, FJ Kub, KD Hobart ECS Journal of Solid State Science and Technology 5 (6), Q176, 2016 | 42 | 2016 |
| Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates BN Feigelson, VM Bermudez, JK Hite, ZR Robinson, VD Wheeler, ... Nanoscale 7 (8), 3694-3702, 2015 | 39 | 2015 |
