| Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces D Leonard, M Krishnamurthy, CM Reaves, SP DenBaars, PM Petroff Applied Physics Letters 63 (23), 3203-3205, 1993 | 2353 | 1993 |
| A rare-earth phosphor containing one-dimensional chains identified through combinatorial methods E Danielson, M Devenney, DM Giaquinta, JH Golden, RC Haushalter, ... Science 279 (5352), 837-839, 1998 | 606 | 1998 |
| A combinatorial approach to the discovery and optimization of luminescent materials E Danielson, JH Golden, EW McFarland, CM Reaves, WH Weinberg, ... Nature 389 (6654), 944, 1997 | 572 | 1997 |
| X-ray powder structure of Sr2CeO4: a new luminescent material discovered by combinatorial chemistry1 E Danielson, M Devenney, DM Giaquinta, JH Golden, RC Haushalter, ... Journal of Molecular Structure 470 (1-2), 229-235, 1998 | 176 | 1998 |
| Optical properties of GaAs confined in the pores of MCM-41 VI Srdanov, I Alxneit, GD Stucky, CM Reaves, SP DenBaars The Journal of Physical Chemistry B 102 (18), 3341-3344, 1998 | 138 | 1998 |
| Formation of coherently strained self-assembled InP quantum islands on InGaP/GaAs (001) SP DenBaars, CM Reaves, V Bressler-Hill, S Varma, WH Weinberg, ... Journal of crystal growth 145 (1-4), 721-727, 1994 | 114 | 1994 |
| Phosphor materials E McFarland, E Danielson, M Devenney, C Reaves, DM Giaquinta, ... US Patent 6,013,199, 2000 | 74 | 2000 |
| Conduction band offsets in ordered‐GaInP/GaAs heterostructures studied by ballistic‐electron‐emission microscopy JJ O’shea, CM Reaves, SP DenBaars, MA Chin, V Narayanamurti Applied physics letters 69 (20), 3022-3024, 1996 | 73 | 1996 |
| Characterization of MOCVD-grown InP on InGaPGaAs (001) CM Reaves, V Bressler-Hill, S Varma, WH Weinberg, SP DenBaars Surface science 326 (3), 209-217, 1995 | 40 | 1995 |
| Formation of self‐assembled InP islands on a GaInP/GaAs (311) A surface CM Reaves, RI Pelzel, GC Hsueh, WH Weinberg, SP DenBaars Applied physics letters 69 (25), 3878-3880, 1996 | 38 | 1996 |
| Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers ME Heimbuch, AL Holmes, CM Reaves, MP Mack, SP DenBaars, ... Journal of electronic materials 23 (2), 87-91, 1994 | 36 | 1994 |
| Low-temperature Pd bonding of III-V semiconductors IH Tan, C Reaves, AL Holmes, EL Hu, JE Bowers, S DenBaars Electronics letters 31 (7), 588-589, 1995 | 26 | 1995 |
| InP islands on InGaP/GaAs (001): island separation distributions S Varma, CM Reaves, V Bressler-Hill, SP DenBaars, WH Weinberg Surface science 393 (1-3), 24-33, 1997 | 25 | 1997 |
| Control of III–V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness MS Gaffney, CM Reaves, RS Smith, AL Holmes Jr, SP DenBaars Journal of crystal growth 167 (1-2), 8-16, 1996 | 16 | 1996 |
| Method for preparing a CsX photostimulable phosphor and phosphor screens therefrom M Devenney, C Reaves, P Leblans, L Struye US Patent 6,802,991, 2004 | 13 | 2004 |
| Characterization of InP islands on InGaPGaAs (001): effect of deposition temperature V Bressler-Hill, CM Reaves, S Varma, SP DenBaars, WH Weinberg Surface science 341 (1-2), 29-39, 1995 | 13 | 1995 |
| Passivation of InGaAs/InP surface quantum wells by ion‐gun hydrogenation YL Chang, IH Tan, C Reaves, J Merz, E Hu, S DenBaars, A Frova, ... Applied physics letters 64 (20), 2658-2660, 1994 | 13 | 1994 |
| "Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission" CMR James C. Sturm Proc. SPIE, 1393,, 1991 | 11* | 1991 |
| Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs (100) surfaces CM Reaves, V Bressler-Hill, WH Weinberg, SP Denbaars Journal of electronic materials 24 (11), 1605, 1995 | 8 | 1995 |
| INDIUM-PHOSPHIDE (INP) BASED HETEROSTRUCTURE MATERIALS AND DEVICES GROWN BY MOCVD USING TERTIARYBUTYLARSINE (TBA) TERTIARYBUTYLPHOSPHINE (TBP) SP DenBaars, AL Holmes, ME Heimbuch, VJ Jayaraman, CM Reaves, ... JOURNAL OF THE KOREAN PHYSICAL SOCIETY 28, S37-S42, 1995 | 4 | 1995 |
