| Investigation of forming, SET, and data retention of conductive-bridge random-access memory for stack optimization J Guy, G Molas, P Blaise, M Bernard, A Roule, G Le Carval, V Delaye, ... IEEE Transactions on Electron Devices 62 (11), 3482-3489, 2015 | 54 | 2015 |
| Sb-doped GeS2as performance and reliability booster in Conductive Bridge RAM E Vianello, G Molas, F Longnos, P Blaise, E Souchier, C Cagli, G Palma, ... 2012 International Electron Devices Meeting, 31.5. 1-31.5. 4, 2012 | 52 | 2012 |
| Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al2O3/CuTeGe conductive bridge RAM (CBRAM) J Guy, G Molas, E Vianello, F Longnos, S Blanc, C Carabasse, M Bernard, ... 2013 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2013 | 49 | 2013 |
| Controlling oxygen vacancies in doped oxide based CBRAM for improved memory performances G Molas, E Vianello, F Dahmani, M Barci, P Blaise, J Guy, A Toffoli, ... 2014 IEEE International Electron Devices Meeting, 6.1. 1-6.1. 4, 2014 | 37 | 2014 |
| Experimental and theoretical understanding of forming, SET and RESET operations in conductive bridge RAM (CBRAM) for memory stack optimization J Guy, G Molas, P Blaise, C Carabasse, M Bernard, A Roule, G Le Carval, ... 2014 IEEE International Electron Devices Meeting, 6.5. 1-6.5. 4, 2014 | 28 | 2014 |
| Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based conductive bridge memories G Palma, E Vianello, G Molas, C Cagli, F Longnos, J Guy, M Reyboz, ... Japanese Journal of Applied Physics 52 (4S), 04CD02, 2013 | 22 | 2013 |
| Impact of SET and RESET conditions on CBRAM high temperature data retention M Barci, J Guy, G Molas, E Vianello, A Toffoli, J Cluzel, A Roule, ... 2014 IEEE International Reliability Physics Symposium, 5E. 3.1-5E. 3.4, 2014 | 18 | 2014 |
| Guidance to reliability improvement in CBRAM using advanced KMC modelling J Guy, G Molas, C Cagli, M Bernard, A Roule, C Carabasse, A Toffoli, ... 2017 IEEE International Reliability Physics Symposium (IRPS), PM-2.1-PM-2.5, 2017 | 12 | 2017 |
| Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chip SH Jo, H Nazarian, S Nguyen, J Guy, Z Li US Patent 11,430,516, 2022 | 9 | 2022 |
| Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications G Molas, G Piccolboni, M Barci, B Traore, J Guy, G Palma, E Vianello, ... 2016 International Symposium on VLSI Technology, Systems and Application …, 2016 | 8 | 2016 |
| First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors S Vaziri, IM Datye, E Ambrosi, AI Khan, H Kwon, CH Wu, CF Hsu, J Guy, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 7 | 2022 |
| Fellow, IEEE, F. Clermidy, B. De Salvo, L. Perniola,“Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization” J Guy, G Molas, P Blaise, M Bernard, A Roule, G Le Carval, V Delaye, ... IEEE Transactions on Electron Devices 62 (11), 3482-3489, 2015 | 7 | 2015 |
| Method for determining electrical parameters used to programme a resistive random access memory G Molas, GUY Jérémy US Patent 9,633,725, 2017 | 5 | 2017 |
| Evaluation des performances des mémoires CBRAM (Conductive Bridge Memory) afin d’optimiser les empilements technologiques et les solutions d’intégration J Guy Université Grenoble Alpes (ComUE), 2015 | 5 | 2015 |
| Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory J Guy, G Molas, E Vianello, C Carabasse, P Blaise, M Bernard, ... Thin Solid Films 563, 15-19, 2014 | 5 | 2014 |
| IEDM 2014 Tech. Dig. J Guy, G Molas, P Blaise, C Carabasse, M Bernard IEDM 2014 Tech. Dig, 136-139, 0 | 5 | |
| Conductive bridge ram (cbram): functionality, reliability and applications G Molas, J Guy, M Barci, F Longnos, G Palma, E Vianello, P Blaise, ... International Conference on Solid State Devices and Materials (SSDM) 2015, 2015 | 3 | 2015 |
| Evaluation of the performances of scaled CBRAM devices to optimize technological solutions and integration flows J Guy Université Grenoble Alpes, 2015 | 1 | 2015 |
| Ultrafast 7 Mbps True Random Number Generator Based on SNGCT Selector J Guy, E Ambrosi, CH Wu, X Bao IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Forming-Free Selectors Based on Te in an Insulating SiO x Matrix IM Datye, S Vaziri, E Ambrosi, AI Khan, H Kwon, CH Wu, CF Hsu, J Guy, ... IEEE Transactions on Electron Devices 71 (1), 530-535, 2024 | | 2024 |
