| MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019 | 131 | 2019 |
| Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020 | 109* | 2020 |
| Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019 | 105 | 2019 |
| MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020 | 77 | 2020 |
| β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ... IEEE Electron Device Letters 42 (6), 899-902, 2021 | 65 | 2021 |
| Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020 | 46 | 2020 |
| Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021 | 45* | 2021 |
| Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ... ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021 | 41 | 2021 |
| MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020 | 41 | 2020 |
| Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao APL Materials 9 (10), 2021 | 32* | 2021 |
| Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ... ACS applied materials & interfaces 13 (32), 38477-38490, 2021 | 24 | 2021 |
| Thermal Transport across Metal/β-Ga2O3 Interfaces J Shi, C Yuan, HL Huang, J Johnson, C Chae, S Wang, R Hanus, S Kim, ... ACS Applied Materials & Interfaces 13 (24), 29083-29091, 2021 | 23 | 2021 |
| Band offsets at metalorganic chemical vapor deposited β-(AlxGa1− x) 2O3/β-Ga2O3 interfaces—Crystalline orientation dependence AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao Journal of Vacuum Science & Technology A 39 (6), 2021 | 19* | 2021 |
| Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, L Meng, A Fiedler, HL Huang, AT Neal, ... Journal of Applied Physics 131 (14), 2022 | 18 | 2022 |
| Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ... Applied Physics Letters 119 (12), 2021 | 18 | 2021 |
| Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition MR Karim, Z Chen, Z Feng, HL Huang, JM Johnson, MJ Tadjer, J Hwang, ... Journal of Vacuum Science & Technology A 39 (2), 2021 | 16 | 2021 |
| Cumulative impacts of proton irradiation on the self-heating of AlGaN/GaN HEMTs B Chatterjee, D Shoemaker, Y Song, T Shi, HL Huang, D Keum, ... ACS Applied Electronic Materials 2 (4), 980-991, 2020 | 16 | 2020 |
| Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films’”[APL Mater. 8, 089101 (2020)] AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (8), 2020 | 12 | 2020 |
| Perspective on atomic scale investigation of point and extended defects in gallium oxide HL Huang, C Chae, J Hwang Journal of Applied Physics 131 (19), 2022 | 10 | 2022 |
| Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films’”[APL Mater. 8, 089101 (2020)] B AFMAU, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, MR Karim, ... APL Mater. 8, 089102, 2020 | 10 | 2020 |
![Hsien-Lien Huang [ORCID:0000-0001-9598-9031]](https://scholar.googleusercontent.com/citations?view_op=view_photo&user=WVK8AVAAAAAJ&citpid=1)