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Hsien-Lien Huang [ORCID:0000-0001-9598-9031]
Hsien-Lien Huang [ORCID:0000-0001-9598-9031]
Verified email at osu.edu
Title
Cited by
Cited by
Year
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...
Applied Physics Letters 115 (12), 2019
1452019
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
1172019
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 2020
116*2020
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ...
Crystal Growth & Design 20 (10), 6722-6730, 2020
842020
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ...
IEEE Electron Device Letters 42 (6), 899-902, 2021
782021
Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics
Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ...
ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021
552021
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (25), 2020
502020
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films
JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ...
APL Materials 9 (5), 2021
46*2021
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (14), 2020
432020
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates
AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
APL Materials 9 (10), 2021
37*2021
Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films
Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ...
ACS applied materials & interfaces 13 (32), 38477-38490, 2021
282021
Thermal Transport across Metal/β-Ga2O3 Interfaces
J Shi, C Yuan, HL Huang, J Johnson, C Chae, S Wang, R Hanus, S Kim, ...
ACS Applied Materials & Interfaces 13 (24), 29083-29091, 2021
262021
Band offsets at metalorganic chemical vapor deposited β-(AlxGa1− x) 2O3/β-Ga2O3 interfaces—Crystalline orientation dependence
AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
Journal of Vacuum Science & Technology A 39 (6), 2021
23*2021
Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux
NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ...
Applied Physics Letters 119 (12), 2021
222021
Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films
AFM Bhuiyan, Z Feng, L Meng, A Fiedler, HL Huang, AT Neal, ...
Journal of Applied Physics 131 (14), 2022
202022
Cumulative impacts of proton irradiation on the self-heating of AlGaN/GaN HEMTs
B Chatterjee, D Shoemaker, Y Song, T Shi, HL Huang, D Keum, ...
ACS Applied Electronic Materials 2 (4), 980-991, 2020
182020
Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition
MR Karim, Z Chen, Z Feng, HL Huang, JM Johnson, MJ Tadjer, J Hwang, ...
Journal of Vacuum Science & Technology A 39 (2), 2021
172021
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
Y Song, A Bhattacharyya, A Karim, D Shoemaker, HL Huang, S Roy, ...
ACS Applied Materials & Interfaces 15 (5), 7137-7147, 2023
152023
Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3
HL Huang, C Chae, JM Johnson, A Senckowski, S Sharma, U Singisetti, ...
APL Materials 11 (6), 2023
132023
Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films’”[APL Mater. 8, 089101 (2020)]
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (8), 2020
132020
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