| MOCVD grown epitaxial -Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck APL Materials 7 (2), 022506, 2019 | 239 | 2019 |
| Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS Speck APL Materials 7 (12), 2019 | 93* | 2019 |
| Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures P Vogt, A Mauze, F Wu, B Bonef, JS Speck Applied Physics Express 11 (11), 115503, 2018 | 79 | 2018 |
| n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy SH Han, A Mauze, E Ahmadi, T Mates, Y Oshima, JS Speck Semiconductor Science and Technology 33 (4), 045001, 2018 | 76 | 2018 |
| Low 114 cm− 3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD F Alema, Y Zhang, A Osinsky, N Orishchin, N Valente, A Mauze, JS Speck APL Materials 8 (2), 2020 | 74* | 2020 |
| Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film F Alema, B Hertog, P Mukhopadhyay, Y Zhang, A Mauze, A Osinsky, ... APL Materials 7 (2), 2019 | 72 | 2019 |
| Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, E Ahmadi, JS Speck Applied Physics Letters 117 (22), 2020 | 62 | 2020 |
| Anisotropic etching of β-Ga2O3 using hot phosphoric acid Y Zhang, A Mauze, JS Speck Applied Physics Letters 115 (1), 2019 | 61 | 2019 |
| Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck Applied Physics Letters 118 (16), 2021 | 57 | 2021 |
| Modeling and analysis for thermal management in gallium oxide field-effect transistors C Yuan, Y Zhang, R Montgomery, S Kim, J Shi, A Mauze, T Itoh, JS Speck, ... Journal of Applied Physics 127 (15), 2020 | 54 | 2020 |
| Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Mates, F Wu, JS Speck Applied Physics Letters 115 (5), 2019 | 54 | 2019 |
| Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, F Wu, JS Speck APL Materials 8 (2), 2020 | 49* | 2020 |
| Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy E Farzana, A Mauze, JB Varley, TE Blue, JS Speck, AR Arehart, ... APL Materials 7 (12), 2019 | 40 | 2019 |
| H2O vapor assisted growth of β-Ga2O3 by MOCVD F Alema, Y Zhang, A Mauze, T Itoh, JS Speck, B Hertog, A Osinsky AIP Advances 10 (8), 2020 | 31 | 2020 |
| Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1–x) 2O3 (x≤ 0.21) films M Hilfiker, U Kilic, A Mock, V Darakchieva, S Knight, R Korlacki, A Mauze, ... Applied Physics Letters 114 (23), 2019 | 31 | 2019 |
| Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3 Y Zhang, A Mauze, F Alema, A Osinsky, JS Speck Applied Physics Express 12 (4), 044005, 2019 | 26 | 2019 |
| Thermal management strategies for gallium oxide vertical trench-fin MOSFETs RH Montgomery, Y Zhang, C Yuan, S Kim, J Shi, T Itoh, A Mauze, ... Journal of Applied Physics 129 (8), 2021 | 25 | 2021 |
| Thermal Management of β-Ga₂O₃ Current Aperture Vertical Electron Transistors S Kim, Y Zhang, C Yuan, R Montgomery, A Mauze, J Shi, E Farzana, ... IEEE Transactions on Components, Packaging and Manufacturing Technology 11 …, 2021 | 15 | 2021 |
| Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy T Itoh, A Mauze, Y Zhang, JS Speck Applied Physics Letters 117 (15), 2020 | 15 | 2020 |
| Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, TE Mates, H Peelaers, CG Van de Walle, ... Journal of Applied Physics 130 (23), 2021 | 10 | 2021 |
