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Akhil Mauze
Akhil Mauze
Graduate Student Researcher
Verified email at ucsb.edu
Title
Cited by
Cited by
Year
MOCVD grown epitaxial -Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck
APL Materials 7 (2), 022506, 2019
1622019
n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
SH Han, A Mauze, E Ahmadi, T Mates, Y Oshima, JS Speck
Semiconductor Science and Technology 33 (4), 045001, 2018
602018
Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
F Alema, B Hertog, P Mukhopadhyay, Y Zhang, A Mauze, A Osinsky, ...
APL Materials 7 (2), 022527, 2019
59*2019
Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures
P Vogt, A Mauze, F Wu, B Bonef, JS Speck
Applied Physics Express 11 (11), 115503, 2018
562018
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS Speck
APL Materials 7 (12), 121110, 2019
54*2019
Low free carrier concentration in epitaxial -Ga2O3 grown by MOCVD
F Alema, Y Zhang, A Osinsky, N Orishchin, N Valente, A Mauze, JS Speck
APL Materials 8 (2), 021110, 2020
50*2020
Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
A Mauze, Y Zhang, T Mates, F Wu, JS Speck
Applied Physics Letters 115 (5), 052102, 2019
362019
Anisotropic etching of β-Ga2O3 using hot phosphoric acid
Y Zhang, A Mauze, JS Speck
Applied Physics Letters 115 (1), 013501, 2019
352019
Modeling and analysis for thermal management in gallium oxide field-effect transistors
C Yuan, Y Zhang, R Montgomery, S Kim, J Shi, A Mauze, T Itoh, JS Speck, ...
Journal of Applied Physics 127 (15), 154502, 2020
342020
Metal oxide catalyzed epitaxy (MOCATAXY) of -Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy
A Mauze, Y Zhang, T Itoh, F Wu, JS Speck
APL Materials 8 (2), 021104, 2020
32*2020
Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
A Mauze, Y Zhang, T Itoh, E Ahmadi, JS Speck
Applied Physics Letters 117 (22), 222102, 2020
312020
Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1–x)2O3 (x ≤ 0.21) films
M Hilfiker, U Kilic, A Mock, V Darakchieva, S Knight, R Korlacki, A Mauze, ...
Applied Physics Letters 114 (23), 231901, 2019
212019
Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3
Y Zhang, A Mauze, F Alema, A Osinsky, JS Speck
Applied Physics Express 12 (4), 044005, 2019
212019
Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck
Applied Physics Letters 118 (16), 162109, 2021
202021
Influence of neutron irradiation on deep levels in Ge-doped (010) -Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, A Mauze, JB Varley, TE Blue, JS Speck, AR Arehart, ...
APL Materials 7 (12), 121102, 2019
192019
H2O vapor assisted growth of β-Ga2O3 by MOCVD
F Alema, Y Zhang, A Mauze, T Itoh, JS Speck, B Hertog, A Osinsky
AIP Advances 10 (8), 085002, 2020
152020
Thermal management strategies for gallium oxide vertical trench-fin MOSFETs
RH Montgomery, Y Zhang, C Yuan, S Kim, J Shi, T Itoh, A Mauze, ...
Journal of Applied Physics 129 (8), 085301, 2021
122021
Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy
T Itoh, A Mauze, Y Zhang, JS Speck
Applied Physics Letters 117 (15), 152105, 2020
92020
APL Mater. 7, 121102 (2019)
E Farzana, A Mauze, JB Varley, TE Blue, JS Speck, AR Arehart, ...
8
Thermal Management of β-Ga₂O₃ Current Aperture Vertical Electron Transistors
S Kim, Y Zhang, C Yuan, R Montgomery, A Mauze, J Shi, E Farzana, ...
IEEE Transactions on Components, Packaging and Manufacturing Technology 11 …, 2021
62021
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