Rajendra Dahal
Title
Cited by
Cited by
Year
InGaN/GaN multiple quantum well solar cells with long operating wavelengths
R Dahal, B Pantha, J Li, JY Lin, HX Jiang
Applied Physics Letters 94 (6), 063505, 2009
3882009
InGaN/GaN multiple quantum well concentrator solar cells
R Dahal, J Li, K Aryal, JY Lin, HX Jiang
Applied Physics Letters 97 (7), 073115, 2010
2072010
deep ultraviolet photodetectors based on AlN
J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 89 (21), 213510, 2006
1672006
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang
Applied physics letters 98 (21), 211110, 2011
1492011
Thermoelectric properties of alloys
BN Pantha, R Dahal, J Li, JY Lin, HX Jiang, G Pomrenke
Applied Physics Letters 92 (4), 042112, 2008
1372008
Correlation between optoelectronic and structural properties and epilayer thickness of AlN
BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ...
Applied Physics Letters 90 (24), 241101, 2007
1212007
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
J Li, S Majety, R Dahal, WP Zhao, JY Lin, HX Jiang
Applied physics letters 101 (17), 171112, 2012
902012
Hexagonal boron nitride epitaxial layers as neutron detector materials
J Li, R Dahal, S Majety, JY Lin, HX Jiang
Nuclear instruments and methods in physics research section a: accelerators …, 2011
862011
Epitaxial growth and demonstration of hexagonal BN/AlGaN pn junctions for deep ultraviolet photonics
S Majety, J Li, XK Cao, R Dahal, BN Pantha, JY Lin, HX Jiang
Applied Physics Letters 100 (6), 061121, 2012
852012
Recent developments of wide-bandgap semiconductor based UV sensors
A BenMoussa, A Soltani, U Schühle, K Haenen, YM Chong, WJ Zhang, ...
Diamond and Related Materials 18 (5-8), 860-864, 2009
792009
Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors
R Dahal, TM Al Tahtamouni, ZY Fan, JY Lin, HX Jiang
Applied physics letters 90 (26), 263505, 2007
512007
Characterization of AlN metal-semiconductor-metal diodes in the spectral range of : Photoemission assessments
A BenMoussa, JF Hochedez, R Dahal, J Li, JY Lin, HX Jiang, A Soltani, ...
Applied Physics Letters 92 (2), 022108, 2008
492008
Band-edge transitions in hexagonal boron nitride epilayers
S Majety, XK Cao, J Li, R Dahal, JY Lin, HX Jiang
Applied physics letters 101 (5), 051110, 2012
452012
Erbium-doped GaN optical amplifiers operating at
R Dahal, C Ugolini, JY Lin, HX Jiang, JM Zavada
Applied Physics Letters 95 (11), 111109, 2009
442009
emitters based on erbium doped InGaN p-i-n junctions
R Dahal, C Ugolini, JY Lin, HX Jiang, JM Zavada
Applied Physics Letters 97 (14), 141109, 2010
422010
Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency
R Dahal, KC Huang, J Clinton, N LiCausi, JQ Lu, Y Danon, I Bhat
Applied Physics Letters 100 (24), 243507, 2012
372012
Current-injected light emitting diodes based on erbium-doped GaN
R Dahal, C Ugolini, JY Lin, HX Jiang, JM Zavada
Applied Physics Letters 93 (3), 033502, 2008
372008
AlN avalanche photodetectors
R Dahal, TM Al Tahtamouni, JY Lin, HX Jiang
Applied Physics Letters 91 (24), 243503, 2007
372007
Thermoelectric Properties of In0.3Ga0.7N Alloys
BN Pantha, R Dahal, J Li, JY Lin, HX Jiang, G Pomrenke
Journal of electronic materials 38 (7), 1132-1135, 2009
362009
Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection
K Ahmed, R Dahal, A Weltz, JQ Lu, Y Danon, IB Bhat
Applied physics letters 109 (11), 113501, 2016
302016
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Articles 1–20