Han Wui Then
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Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing
G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ...
2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to …
M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ...
2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact …
HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019
High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architecture
R Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ...
2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 2010
Charge control analysis of transistor laser operation
M Feng, N Holonyak, HW Then, G Walter
Applied physics letters 91 (5), 2007
P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si
N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters 40 (7), 1036-1039, 2019
Regrowth-free GaN-based complementary logic on a Si substrate
N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios
IEEE Electron Device Letters 41 (6), 820-823, 2020
Trench confined epitaxially grown device layer (s)
R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ...
US Patent 8,765,563, 2014
Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
G Dewey, RS Chau, M Radosavljevic, HW Then, SB Clendenning, ...
US Patent 8,890,264, 2014
Prospects for wide bandgap and ultrawide bandgap CMOS devices
SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ...
IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020
Resonance-free frequency response of a semiconductor laser
M Feng, HW Then, N Holonyak, G Walter, A James
Applied Physics Letters 95 (3), 2009
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ...
IEEE Electron Device Letters 39 (12), 1848-1851, 2018
4.3 GHz optical bandwidth light emitting transistor
G Walter, CH Wu, HW Then, M Feng, N Holonyak
Applied Physics Letters 94 (24), 2009
Tilted-charge high speed (7 GHz) light emitting diode
G Walter, CH Wu, HW Then, M Feng, N Holonyak
Applied Physics Letters 94 (23), 2009
Achromatic compound retarder
G Sharp, K Johnson, M Robinson, J Chen
US Patent App. 10/134,727, 2002
High voltage field effect transistors
HW Then, R Chau, B Chu-Kung, G Dewey, J Kavalieros, M Metz, ...
US Patent 9,245,989, 2016
Tunnel junction transistor laser
M Feng, N Holonyak, HW Then, CH Wu, G Walter
Applied Physics Letters 94 (4), 2009
The transistor laser: Theory and experiment
HW Then, M Feng, N Holonyak
Proceedings of the IEEE 101 (10), 2271-2298, 2013
Microwave circuit model of the three-port transistor laser
HW Then, M Feng, N Holonyak
Journal of Applied Physics 107 (9), 2010
Experimental Observation and Physics of “Negative” Capacitance and Steeper than 40mV/decade Subthreshold
HW Then, S Dasgupta, M Radosavljevic, L Chow, B Chu-Kung, G Dewey, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 28.3. 1-28.3. 4, 2013
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