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Benjamin Huet
Benjamin Huet
Assistant Research professor, Penn State University
Verified email at psu.edu
Title
Cited by
Cited by
Year
Role of Cu foil in-situ annealing in controlling the size and thickness of CVD graphene domains
B Huet, JP Raskin
Carbon 129, 270-280, 2018
602018
Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology
B Huet, JP Raskin, DW Snyder, JM Redwing
Carbon 163, 95-104, 2020
462020
Pressure-controlled chemical vapor deposition of single-layer graphene with millimeter-size domains on thin copper film
B Huet, JP Raskin
Chemistry of Materials 29 (8), 3431-3440, 2017
372017
Role of the Cu Substrate in the Growth of Ultra-Flat Crack-Free Highly-Crystalline Single-Layer Graphene
B Huet, JP Raskin
Nanoscale 10 (46), 21898-21909, 2018
252018
Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition
B Huet, X Zhang, JM Redwing, DW Snyder, JP Raskin
2D Materials 6 (4), 045032, 2019
212019
Adhesionless and near-ideal contact behavior of graphene on Cu thin film
M Hammad, JJ Adjizian, CH Sacré, B Huet, JC Charlier, JP Raskin, ...
Carbon 122, 446-450, 2017
182017
Single layer graphene controlled surface and bulk indentation plasticity in copper
F Bahrami, M Hammad, M Fivel, B Huet, C D'Haese, L Ding, B Nysten, ...
International Journal of Plasticity 138, 102936, 2021
142021
Hybrid GaAsSb/GaAs heterostructure core–shell nanowire/graphene and photodetector applications
S Nalamati, S Devkota, J Li, R Lavelle, B Huet, D Snyder, A Penn, ...
ACS Applied Electronic Materials 2 (10), 3109-3120, 2020
132020
Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode
G Li, N André, B Huet, T Delhaye, N Reckinger, LA Francis, L Liao, ...
Journal of Physics D: Applied Physics 52 (24), 245101, 2019
132019
Physical vapor deposition of zinc phthalocyanine nanostructures on oxidized silicon and graphene substrates
T Mirabito, B Huet, AL Briseno, DW Snyder
Journal of Crystal Growth 533, 125484, 2020
122020
Substrate modification during chemical vapor deposition of hBN on sapphire
A Bansal, M Hilse, B Huet, K Wang, A Kozhakhmetov, JH Kim, S Bachu, ...
ACS Applied Materials & Interfaces 13 (45), 54516-54526, 2021
92021
Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire
X Chen, B Huet, TH Choudhury, JM Redwing, TM Lu, GC Wang
Applied Surface Science 567, 150798, 2021
82021
Influence of the underlying substrate on the physical vapor deposition of Zn-phthalocyanine on graphene
T Mirabito, B Huet, JM Redwing, DW Snyder
ACS omega 6 (31), 20598-20610, 2021
32021
Chemical vapor synthesis of high-quality centimeter-sized crystals of monolayer graphene
B Huet
UCL-Université Catholique de Louvain, 2017
22017
Scalable Synthesis of 2D materials
TH Choudhury, B Huet, X Zhang, A Bansal, JM Redwing
2D Materials for Electronics, Sensors and Devices Synthesis …, 2022
12022
S/tem characterization of vertical heterostructures formed by mono-to multi-layer graphene and wse2
S Bachu, B Huet, DR Hickey, C Qian, J Redwing, N Alem
Microscopy and Microanalysis 27 (S1), 894-895, 2021
12021
MOCVD of WSe2 crystals on highly crystalline single-and multi-layer CVD graphene
B Huet, S Bachu, N Alem, DW Snyder, JM Redwing
Carbon 202, 150-160, 2023
2023
Tuning the stochasticity of VO2 neurons firing-threshold through grain size engineering
N Bidoul, B Huet, F Ureña Begara, JP Raskin, D Flandre
Proceedings of Neuromorphic Materials, Devices, Circuits and Systems …, 2023
2023
WSe2 on c-plane sapphire with preferred orientation grown by MOCVD
J Redwing, H Zhu, T Choudhury, T Mc Knight, N Trainor, B Huet
2023
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
H Zhu, T Choudhury, A Bansal, B Huet, K Zhang, A Puretzky, S Bachu, ...
2022
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