| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018 | 403 | 2018 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 140 | 2019 |
| Flexible gallium nitride for high‐performance, strainable radio‐frequency devices NR Glavin, KD Chabak, ER Heller, EA Moore, TA Prusnick, B Maruyama, ... Advanced Materials 29 (47), 1701838, 2017 | 130 | 2017 |
| Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors S Choi, E Heller, D Dorsey, R Vetury, S Graham Journal of Applied Physics 113 (9), 2013 | 122 | 2013 |
| Thermometry of AlGaN/GaN HEMTs using multispectral raman features S Choi, ER Heller, D Dorsey, R Vetury, S Graham IEEE Transactions on Electron Devices 60 (6), 1898-1904, 2013 | 109 | 2013 |
| The impact of bias conditions on self-heating in AlGaN/GaN HEMTs S Choi, ER Heller, D Dorsey, R Vetury, S Graham IEEE transactions on electron devices 60 (1), 159-162, 2012 | 94 | 2012 |
| Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs E Heller, S Choi, D Dorsey, R Vetury, S Graham Microelectronics Reliability 53 (6), 872-877, 2013 | 80 | 2013 |
| The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors S Choi, E Heller, D Dorsey, R Vetury, S Graham Journal of Applied Physics 114 (16), 2013 | 79 | 2013 |
| Prediction of giant values from a calculation of excitonic nonlinear optical properties in rectangular GaAs quantum-well wires FL Madarasz, F Szmulowicz, FK Hopkins, DL Dorsey Physical Review B 49 (19), 13528, 1994 | 64 | 1994 |
| Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor CA Lenyk, NC Giles, EM Scherrer, BE Kananen, LE Halliburton, ... Journal of Applied Physics 125 (4), 2019 | 49 | 2019 |
| Ab initio calculation of binding and diffusion of a Ga adatom on the surface JG LePage, M Alouani, DL Dorsey, JW Wilkins, PE Blöchl Physical Review B 58 (3), 1499, 1998 | 49 | 1998 |
| Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects JP Jones, E Heller, D Dorsey, S Graham Microelectronics Reliability 55 (12), 2634-2639, 2015 | 41 | 2015 |
| Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3 LAM Lyle, TC Back, CT Bowers, AJ Green, KD Chabak, DL Dorsey, ... APL Materials 9 (6), 2021 | 35 | 2021 |
| Fast transient thermoreflectance CCD imaging of pulsed self heating in AlGaN/GaN power transistors K Maize, E Heller, D Dorsey, A Shakouri 2013 IEEE International Reliability Physics Symposium (IRPS), CD. 2.1-CD. 2.3, 2013 | 33 | 2013 |
| Heuristic rules for group IV dopant site selection in III–V compounds R Venkatasubramanian, DL Dorsey, K Mahalingam Journal of crystal growth 175, 224-228, 1997 | 24 | 1997 |
| Thermoreflectance CCD imaging of self heating in AlGaN/GaN high electron mobility power transistors at high drain voltage K Maize, E Heller, D Dorsey, A Shakouri 2012 28th Annual IEEE Semiconductor Thermal Measurement and Management …, 2012 | 23 | 2012 |
| Compositional analysis of mixed–cation‐anion III–V semiconductor interfaces using phase retrieval high‐resolution transmission electron microscopy K Mahalingam, KG Eyink, GJ Brown, DL Dorsey, CF Kisielowski, A Thust Journal of microscopy 230 (3), 372-381, 2008 | 23 | 2008 |
| Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs) JP Jones, MR Rosenberger, WP King, R Vetury, E Heller, D Dorsey, ... Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2014 | 17 | 2014 |
| Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution K Mahalingam, KG Eyink, GJ Brown, DL Dorsey, CF Kisielowski, A Thust Applied physics letters 88 (9), 2006 | 17 | 2006 |
| Molecular‐beam epitaxial growth surface roughening kinetics of Ge (001): A theoretical study R Venkatasubramanian, DL Dorsey Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 16 | 1993 |
