David Brown
David Brown
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Proton elastic form factor ratios to by polarization transfer
V Punjabi, CF Perdrisat, KA Aniol, FT Baker, J Berthot, PY Bertin, ...
Physical Review C 71 (5), 055202, 2005
Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications
K Shinohara, DC Regan, Y Tang, AL Corrion, DF Brown, JC Wong, ...
IEEE Transactions on Electron Devices 60 (10), 2982-2996, 2013
Ultrahigh-Speed GaN High-Electron-Mobility Transistors Withof 454/444 GHz
Y Tang, K Shinohara, D Regan, A Corrion, D Brown, J Wong, A Schmitz, ...
IEEE Electron Device Letters 36 (6), 549-551, 2015
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
S Keller, H Li, M Laurent, Y Hu, N Pfaff, J Lu, DF Brown, NA Fichtenbaum, ...
Semiconductor Science and Technology 29 (11), 113001, 2014
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
S Keller, NA Fichtenbaum, F Wu, D Brown, A Rosales, SP DenBaars, ...
Journal of Applied Physics 102 (8), 2007
Combining ab initio computations, neural networks, and diffusion Monte Carlo: An efficient method to treat weakly bound molecules
DFR Brown, MN Gibbs, DC Clary
The Journal of chemical physics 105 (17), 7597-7604, 1996
Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth
S Dasgupta, N Nidhi, DF Brown, F Wu, S Keller, JS Speck, UK Mishra
Applied physics letters 96 (14), 2010
220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic
K Shinohara, A Corrion, D Regan, I Milosavljevic, D Brown, S Burnham, ...
2010 International Electron Devices Meeting, 30.1. 1-30.1. 4, 2010
92–96 GHz GaN power amplifiers
M Micovic, A Kurdoghlian, A Margomenos, DF Brown, K Shinohara, ...
2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency
K Shinohara, D Regan, A Corrion, D Brown, S Burnham, PJ Willadsen, ...
2011 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2011
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding
F Liu, RR Yu, AM Young, JP Doyle, X Wang, L Shi, KN Chen, X Li, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG
K Shinohara, D Regan, A Corrion, D Brown, Y Tang, J Wong, G Candia, ...
2012 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2012
High quality AlN grown on SiC by metal organic chemical vapor deposition
Z Chen, S Newman, D Brown, R Chung, S Keller, UK Mishra, ...
Applied Physics Letters 93 (19), 2008
GaN technology for E, W and G-band applications
A Margomenos, A Kurdoghlian, M Micovic, K Shinohara, DF Brown, ...
2014 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2014
W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE
DF Brown, A Williams, K Shinohara, A Kurdoghlian, I Milosavljevic, ...
2011 international electron devices meeting, 19.3. 1-19.3. 4, 2011
Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With of 260 GHz
K Shinohara, D Regan, I Milosavljevic, AL Corrion, DF Brown, ...
IEEE Electron Device Letters 32 (8), 1074-1076, 2011
High frequency GaN HEMTs for RF MMIC applications
M Micovic, DF Brown, D Regan, J Wong, Y Tang, F Herrault, D Santos, ...
2016 IEEE International Electron Devices Meeting (IEDM), 3.3. 1-3.3. 4, 2016
Improving the care of patients with regard to chemotherapy-induced nausea and emesis: the effect of feedback to clinicians on adherence to antiemetic prescribing guidelines
WC Mertens, DJ Higby, D Brown, R Parisi, J Fitzgerald, EM Benjamin, ...
Journal of Clinical Oncology 21 (7), 1373-1378, 2003
Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz
Y Pei, R Chu, NA Fichtenbaum, Z Chen, D Brown, L Shen, S Keller, ...
Japanese Journal of Applied Physics 46 (12L), L1087, 2007
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