| Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications K Shinohara, DC Regan, Y Tang, AL Corrion, DF Brown, JC Wong, ... IEEE Transactions on Electron Devices 60 (10), 2982-2996, 2013 | 504 | 2013 |
| Ultrahigh-Speed GaN High-Electron-Mobility Transistors Withof 454/444 GHz Y Tang, K Shinohara, D Regan, A Corrion, D Brown, J Wong, A Schmitz, ... IEEE Electron Device Letters 36 (6), 549-551, 2015 | 329 | 2015 |
| N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 236 | 2013 |
| Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides S Keller, H Li, M Laurent, Y Hu, N Pfaff, J Lu, DF Brown, NA Fichtenbaum, ... Semiconductor Science and Technology 29 (11), 113001, 2014 | 223 | 2014 |
| Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition S Keller, NA Fichtenbaum, F Wu, D Brown, A Rosales, SP DenBaars, ... Journal of Applied Physics 102 (8), 2007 | 204 | 2007 |
| Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth S Dasgupta, N Nidhi, DF Brown, F Wu, S Keller, JS Speck, UK Mishra Applied physics letters 96 (14), 2010 | 159 | 2010 |
| 92–96 GHz GaN power amplifiers M Micovic, A Kurdoghlian, A Margomenos, DF Brown, K Shinohara, ... 2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012 | 157 | 2012 |
| 220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic K Shinohara, A Corrion, D Regan, I Milosavljevic, D Brown, S Burnham, ... 2010 International Electron Devices Meeting, 30.1. 1-30.1. 4, 2010 | 154 | 2010 |
| Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K Shinohara, D Regan, A Corrion, D Brown, S Burnham, PJ Willadsen, ... 2011 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2011 | 138 | 2011 |
| Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG K Shinohara, D Regan, A Corrion, D Brown, Y Tang, J Wong, G Candia, ... 2012 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2012 | 128 | 2012 |
| High quality AlN grown on SiC by metal organic chemical vapor deposition Z Chen, S Newman, D Brown, R Chung, S Keller, UK Mishra, ... Applied Physics Letters 93 (19), 2008 | 119 | 2008 |
| GaN technology for E, W and G-band applications A Margomenos, A Kurdoghlian, M Micovic, K Shinohara, DF Brown, ... 2014 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2014 | 114 | 2014 |
| W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE DF Brown, A Williams, K Shinohara, A Kurdoghlian, I Milosavljevic, ... 2011 international electron devices meeting, 19.3. 1-19.3. 4, 2011 | 106 | 2011 |
| High frequency GaN HEMTs for RF MMIC applications M Micovic, DF Brown, D Regan, J Wong, Y Tang, F Herrault, D Santos, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.3. 1-3.3. 4, 2016 | 104 | 2016 |
| Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With of 260 GHz K Shinohara, D Regan, I Milosavljevic, AL Corrion, DF Brown, ... IEEE Electron Device Letters 32 (8), 1074-1076, 2011 | 102 | 2011 |
| Impact of Plasma Treatment on GaN R Chu, CS Suh, MH Wong, N Fichtenbaum, D Brown, L McCarthy, ... IEEE electron device letters 28 (9), 781-783, 2007 | 78 | 2007 |
| Impact of Plasma Treatment on GaN R Chu, CS Suh, MH Wong, N Fichtenbaum, D Brown, L McCarthy, ... IEEE electron device letters 28 (9), 781-783, 2007 | 78 | 2007 |
| Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Y Pei, R Chu, NA Fichtenbaum, Z Chen, D Brown, L Shen, S Keller, ... Japanese Journal of Applied Physics 46 (12L), L1087, 2007 | 77 | 2007 |
| Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors AR Arehart, A Sasikumar, S Rajan, GD Via, B Poling, B Winningham, ... Solid-State Electronics 80, 19-22, 2013 | 75 | 2013 |
| Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mmand 112-GHz AL Corrion, K Shinohara, D Regan, I Milosavljevic, P Hashimoto, ... IEEE electron device letters 31 (10), 1116-1118, 2010 | 75 | 2010 |
