Juanita Bocquel
Title
Cited by
Cited by
Year
Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
JG Keizer, J Bocquel, PM Koenraad, T Mano, T Noda, K Sakoda
Applied Physics Letters 96 (6), 062101, 2010
732010
Spatial metrology of dopants in silicon with exact lattice site precision
M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ...
Nature nanotechnology 11 (9), 763-768, 2016
452016
Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion
N Ha, T Mano, YL Chou, YN Wu, SJ Cheng, J Bocquel, PM Koenraad, ...
Physical Review B 92 (7), 075306, 2015
332015
Precise shape engineering of epitaxial quantum dots by growth kinetics
S Bietti, J Bocquel, S Adorno, T Mano, JG Keizer, PM Koenraad, ...
Physical Review B 92 (7), 075425, 2015
322015
Spatially resolved resonant tunneling on single atoms in silicon
B Voisin, J Salfi, J Bocquel, R Rahman, S Rogge
Journal of Physics: Condensed Matter 27 (15), 154203, 2015
232015
Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope
J Bocquel, VR Kortan, C Şahin, RP Campion, BL Gallagher, ME Flatté, ...
Physical Review B 87 (7), 075421, 2013
192013
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
M Usman, R Rahman, J Salfi, J Bocquel, B Voisin, S Rogge, G Klimeck, ...
Journal of Physics: Condensed Matter 27 (15), 154207, 2015
172015
Donor wave functions in Si gauged by STM images
AL Saraiva, J Salfi, J Bocquel, B Voisin, S Rogge, RB Capaz, ...
Physical Review B 93 (4), 045303, 2016
162016
Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy
J Bocquel, AD Giddings, T Mano, TJ Prosa, DJ Larson, PM Koenraad
Applied Physics Letters 105 (15), 153102, 2014
142014
CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K
T Aichele, A Tribu, G Sallen, J Bocquel, E Bellet-Amalric, C Bougerol, ...
Journal of crystal growth 311 (7), 2123-2127, 2009
142009
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions
A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ...
Physical Review B 97 (19), 195301, 2018
122018
Valley filtering in spatial maps of coupling between silicon donors and quantum dots
J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ...
Physical Review X 8 (3), 031049, 2018
112018
Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy
JG Keizer, M Bozkurt, J Bocquel, T Mano, T Noda, K Sakoda, EC Clark, ...
Journal of Applied Physics 109 (10), 102413, 2011
102011
A probabilistic finite state logic machine realized experimentally on a single dopant atom
B Fresch, J Bocquel, S Rogge, RD Levine, F Remacle
Nano letters 17 (3), 1846-1852, 2017
72017
Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon
B Fresch, J Bocquel, D Hiluf, S Rogge, RD Levine, F Remacle
ChemPhysChem 18 (13), 1790-1797, 2017
52017
Atomic scale exploration of natural and self-assembled quantum structures
J Bocquel
32013
Valley interference and spin exchange at the atomic scale in silicon
B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ...
Nature communications 11 (1), 1-11, 2020
22020
Atomically precise control of a coupled donor-quantum dot system in silicon
J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, M Simmons, ...
APS March Meeting Abstracts 2017, R52. 004, 2017
22017
Observation of the symmetry of core states of a single Fe impurity in GaAs
J Bocquel, VR Kortan, RP Campion, BL Gallagher, ME Flatté, ...
Physical Review B 96 (7), 075207, 2017
12017
Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy
SJC Mauger, J Bocquel, PM Koenraad, CE Feeser, ND Parashar, ...
Applied Physics Letters 107 (22), 222102, 2015
12015
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