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Juanita Bocquel
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Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
JG Keizer, J Bocquel, PM Koenraad, T Mano, T Noda, K Sakoda
Applied Physics Letters 96 (6), 2010
792010
Spatial metrology of dopants in silicon with exact lattice site precision
M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ...
Nature nanotechnology 11 (9), 763-768, 2016
632016
Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion
N Ha, T Mano, YL Chou, YN Wu, SJ Cheng, J Bocquel, PM Koenraad, ...
Physical Review B 92 (7), 075306, 2015
502015
Precise shape engineering of epitaxial quantum dots by growth kinetics
S Bietti, J Bocquel, S Adorno, T Mano, JG Keizer, PM Koenraad, ...
Physical Review B 92 (7), 075425, 2015
372015
Valley interference and spin exchange at the atomic scale in silicon
B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ...
Nature communications 11 (1), 6124, 2020
302020
Spatially resolved resonant tunneling on single atoms in silicon
B Voisin, J Salfi, J Bocquel, R Rahman, S Rogge
Journal of Physics: Condensed Matter 27 (15), 154203, 2015
282015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
M Usman, R Rahman, J Salfi, J Bocquel, B Voisin, S Rogge, G Klimeck, ...
Journal of Physics: Condensed Matter 27 (15), 154207, 2015
262015
Valley filtering in spatial maps of coupling between silicon donors and quantum dots
J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ...
Physical Review X 8 (3), 031049, 2018
242018
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions
A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ...
Physical Review B 97 (19), 195301, 2018
242018
Donor wave functions in Si gauged by STM images
AL Saraiva, J Salfi, J Bocquel, B Voisin, S Rogge, RB Capaz, ...
Physical Review B 93 (4), 045303, 2016
232016
Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope
J Bocquel, VR Kortan, C Şahin, RP Campion, BL Gallagher, ME Flatté, ...
Physical Review B 87 (7), 075421, 2013
222013
CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K
T Aichele, A Tribu, G Sallen, J Bocquel, E Bellet-Amalric, C Bougerol, ...
Journal of crystal growth 311 (7), 2123-2127, 2009
192009
Low-temperature photophysics of single nitrogen-vacancy centers in diamond
J Happacher, DA Broadway, J Bocquel, P Reiser, A Jimenéz, ...
Physical Review Letters 128 (17), 177401, 2022
182022
Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy
J Bocquel, AD Giddings, T Mano, TJ Prosa, DJ Larson, PM Koenraad
Applied Physics Letters 105 (15), 2014
162014
Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy
JG Keizer, M Bozkurt, J Bocquel, T Mano, T Noda, K Sakoda, EC Clark, ...
Journal of Applied Physics 109 (10), 2011
142011
A probabilistic finite state logic machine realized experimentally on a single dopant atom
B Fresch, J Bocquel, S Rogge, RD Levine, F Remacle
Nano Letters 17 (3), 1846-1852, 2017
102017
Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon
B Fresch, J Bocquel, D Hiluf, S Rogge, RD Levine, F Remacle
ChemPhysChem 18 (13), 1790-1797, 2017
72017
Magnetic Field Mapping Around Individual Magnetic Nanoparticle Agglomerates Using Nitrogen‐Vacancy Centers in Diamond
F Camarneiro, J Bocquel, J Gallo, M Bañobre‐López, K Berg‐Sørensen, ...
Particle & Particle Systems Characterization 38 (8), 2100011, 2021
62021
Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy
SJC Mauger, J Bocquel, PM Koenraad, CE Feeser, ND Parashar, ...
Applied Physics Letters 107 (22), 2015
52015
Temperature Dependent Photophysics of Single NV Centers in Diamond
J Happacher, J Bocquel, HT Dinani, MA Tschudin, P Reiser, ...
Physical Review Letters 131 (8), 086904, 2023
32023
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