| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 296 | 2009 |
| Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ... Applied Physics Letters 99 (15), 2011 | 250 | 2011 |
| Crystalline properties and strain relaxation mechanism of CVD grown GeSn F Gencarelli, B Vincent, J Demeulemeester, A Vantomme, A Moussa, ... ECS Journal of Solid State Science and Technology 2 (4), P134, 2013 | 155 | 2013 |
| Low temperature deposition of 2D WS 2 layers from WF 6 and H 2 S precursors: impact of reducing agents A Delabie, M Caymax, B Groven, M Heyne, K Haesevoets, J Meersschaut, ... Chemical Communications 51 (86), 15692-15695, 2015 | 99 | 2015 |
| Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ... Chemistry of Materials 29 (7), 2927-2938, 2017 | 93 | 2017 |
| Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control AP Peter, K Martens, G Rampelberg, M Toeller, JM Ablett, J Meersschaut, ... Advanced Functional Materials 25 (5), 679-686, 2015 | 86 | 2015 |
| Electrical characterization of ultrathin RF-sputtered LiPON layers for nanoscale batteries B Put, PM Vereecken, J Meersschaut, A Sepúlveda, A Stesmans ACS applied materials & interfaces 8 (11), 7060-7069, 2016 | 81 | 2016 |
| Multilayer MoS 2 growth by metal and metal oxide sulfurization MH Heyne, D Chiappe, J Meersschaut, T Nuytten, T Conard, H Bender, ... Journal of Materials Chemistry C 4 (6), 1295-1304, 2016 | 68 | 2016 |
| Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism B Groven, A Nalin Mehta, H Bender, J Meersschaut, T Nuytten, ... Chemistry of Materials 30 (21), 7648-7663, 2018 | 67 | 2018 |
| On the blistering of atomic layer deposited Al2O3 as Si surface passivation B Vermang, H Goverde, A Lorenz, A Uruena, G Vereecke, J Meersschaut, ... 2011 37th IEEE Photovoltaic Specialists Conference, 003562-003567, 2011 | 63 | 2011 |
| Process study and characterization of VO2 thin films synthesized by ALD using TEMAV and O3 precursors PA Premkumar, M Toeller, IP Radu, C Adelmann, M Schaekers, ... ECS Journal of Solid State Science and Technology 1 (4), P169, 2012 | 61 | 2012 |
| Integrated cleanroom process for the vapor-phase deposition of large-area zeolitic imidazolate framework thin films AJ Cruz, I Stassen, M Krishtab, K Marcoen, T Stassin, ... Chemistry of Materials 31 (22), 9462-9471, 2019 | 60 | 2019 |
| BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap J Swerts, S Mertens, T Lin, S Couet, Y Tomczak, K Sankaran, G Pourtois, ... Applied Physics Letters 106 (26), 2015 | 57 | 2015 |
| Atomic layer deposition of ruthenium thin films from (ethylbenzyl)(1-ethyl-1, 4-cyclohexadienyl) Ru: Process characteristics, surface chemistry, and film properties M Popovici, B Groven, K Marcoen¶, QM Phung, S Dutta, J Swerts, ... Chemistry of Materials 29 (11), 4654-4666, 2017 | 52 | 2017 |
| Electroless nickel deposition and silicide formation for advanced front side metallization of industrial silicon solar cells L Tous, DH Van Dorp, R Russell, J Das, M Aleman, H Bender, ... Energy Procedia 21, 39-46, 2012 | 50 | 2012 |
| Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2 H Zhang, D Chiappe, J Meersschaut, T Conard, A Franquet, T Nuytten, ... The Journal of Chemical Physics 146 (5), 2017 | 49 | 2017 |
| Influence of composition of SiCN as interfacial layer on plasma activated direct bonding F Inoue, L Peng, S Iacovo, A Phommahaxay, P Verdonck, J Meersschaut, ... ECS Journal of Solid State Science and Technology 8 (6), P346, 2019 | 45 | 2019 |
| High-throughput ion beam analysis at imec J Meersschaut, W Vandervorst Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 40 | 2017 |
| MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics H Zhang, G Arutchelvan, J Meersschaut, A Gaur, T Conard, H Bender, ... Chemistry of Materials 29 (16), 6772-6780, 2017 | 39 | 2017 |
| Interplay between structural and magnetic properties of L1-FePt (001) thin films directly grown on MgO (001) B Laenens, FM Almeida, N Planckaert, K Temst, J Meersschaut, ... Journal of Applied Physics 105 (7), 2009 | 39 | 2009 |
