| A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak -Core DW Park, DR Utomo, BH Lam, SG Lee, JP Hong IEEE Journal of Solid-State Circuits 54 (6), 1613-1623, 2019 | 59 | 2019 |
| A 280-/300-GHz three-stage amplifiers in 65-nm CMOS with 12-/9-dB gain and 1.6/1.4% PAE while dissipating 17.9 mW DW Park, DR Utomo, BH Lam, JP Hong, SG Lee IEEE Microwave and Wireless Components Letters 28 (1), 79-81, 2017 | 37 | 2017 |
| The evolution of channelization receiver architecture: Principles and design challenges J Kim, DR Utomo, A Dissanayake, SK Han, SG Lee IEEE Access 5, 25385-25395, 2017 | 19 | 2017 |
| An 80 MHz bandwidth and 26.8 dBm OOB IIP3 transimpedance amplifier with improved nested feedforward compensation and multi-order filtering H Jung, DR Utomo, SK Han, J Kim, SG Lee IEEE Transactions on Circuits and Systems I: Regular Papers 67 (10), 3410-3421, 2020 | 14 | 2020 |
| Wide locking-range frequency multiplier by 1.5 employing quadrature injection-locked frequency tripler with embedded notch filtering S Shin, DR Utomo, H Jung, SK Han, J Kim, SG Lee IEEE Transactions on Microwave Theory and Techniques 67 (12), 4791-4802, 2019 | 14 | 2019 |
| A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core DW Park, DR Utomo, B Yun, HU Mahmood, SG Lee IEEE Access 9, 99039-99049, 2021 | 13 | 2021 |
| Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-Gmax Gain Boosting Technique DW Park, DR Utomo, B Yun, HU Mahmood, JP Hong, SG Lee IEEE Journal of Solid-State Circuits 56 (11), 3388-3398, 2021 | 13 | 2021 |
| Interleaved bidirectional dc-dc converter operation strategies and problem challenges: an overview MN Syah, E Firmansyah, DR Utomo 2022 IEEE International Conference in Power Engineering Application (ICPEA), 1-6, 2022 | 10 | 2022 |
| A 230–260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax-core DW Park, DR Utomo, JP Hong, SG Lee 2017 Symposium on VLSI Circuits, C300-C301, 2017 | 10 | 2017 |
| A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique DW Park, DR Utomo, JP Hong, K Vaesen, P Wambacq, SG Lee 2020 IEEE Symposium on VLSI Circuits, 1-2, 2020 | 9 | 2020 |
| A fully integrated 490-GHz CMOS heterodyne imager adopting second subharmonic resistive mixer structure KS Choi, DR Utomo, SG Lee IEEE Microwave and Wireless Components Letters 29 (10), 673-676, 2019 | 9 | 2019 |
| 29.7 a 490GHz 32mw fully integrated CMOS receiver adopting dual-locking FLL KS Choi, DR Utomo, KM Kim, BH Yun, SG Lee, IY Lee 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 452-454, 2020 | 8 | 2020 |
| High-power 268-GHz push-push transformer-based oscillator with capacitive degeneration DR Utomo, DW Park, SG Lee, JP Hong IEEE Microwave and Wireless Components Letters 28 (7), 612-614, 2018 | 7 | 2018 |
| A 27 dB Sidelobe Suppression, 1.12 GHz BW−10dB UWB Pulse Generator With Process Compensation HU Mahmood, DR Utomo, J Kim, SG Lee IEEE Transactions on Circuits and Systems II: Express Briefs 68 (8), 2805-2809, 2021 | 5 | 2021 |
| A 30–40 GHz CMOS receiver front-end with 5.9 dB NF and 16.5 dB conversion gain for broadband spectrum sensing applications H Jung, DR Utomo, S Shin, SK Han, SG Lee, J Kim Electronics 8 (5), 593, 2019 | 5 | 2019 |
| A 293/440 GHz push-push double feedback oscillators with 5.0/− 3.9 dBm output power and 2.9/0.6% DC-to-RF efficiency in 65 nm CMOS DR Utomo, DW Park, B Yun, SG Lee 2020 IEEE Symposium on VLSI Circuits, 1-2, 2020 | 4 | 2020 |
| A 201 and 283 GHz Dual-Band Amplifier in 65 nm CMOS Adopting Dual-Frequency -Core with Dual-Band Matching DW Park, B Yun, DR Utomo, JP Hong, SG Lee IEEE Transactions on Terahertz Science and Technology, 2023 | 3 | 2023 |
| 500 GHz CMOS heterodyne imager adopting fourth subharmonic passive mixer KS Choi, DW Park, DR Utomo, SG Lee Microwave and Optical Technology Letters 62 (2), 683-687, 2020 | 3 | 2020 |
| A 270-GHz push-push transformer-based oscillator adopting power leakage suppression technique DR Utomo, DW Park, JP Hong, SG Lee Electronics 8 (11), 1347, 2019 | 3 | 2019 |
| Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology H Jung, DR Utomo, S Shin, SK Han, SG Lee, J Kim 2018 International SoC Design Conference (ISOCC), 105-106, 2018 | 3 | 2018 |
