| Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ... Acta Materialia 61 (3), 945-951, 2013 | 500 | 2013 |
| Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting DF Feezell, JS Speck, SP DenBaars, S Nakamura Journal of Display Technology 9 (99), 1-9, 2013 | 381* | 2013 |
| COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs JW Raring, DF Feezell, MP D'evelyn US Patent App. 12/491,176, 2010 | 342 | 2010 |
| Solid-state optical device having enhanced indium content in active regions JW Raring, DF Feezell, S Nakamura US Patent 8,847,249, 2014 | 316 | 2014 |
| HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN JW Raring, DF Feezell US Patent App. 12/481,543, 2010 | 315 | 2010 |
| Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser DF Feezell, DA Cohen, RM Farrell, M Ishida, S Nakamura US Patent 7,480,322, 2009 | 289 | 2009 |
| Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ... US Patent 7,839,903, 2010 | 274 | 2010 |
| Demonstration of nonpolar m-plane InGaN/GaN laser diodes MC Schmidt, KC Kim, RM Farrell, DF Feezell, DA Cohen, M Saito, K Fujito, ... Japanese journal of applied physics 46 (3L), L190, 2007 | 271 | 2007 |
| Optical device structure using GaN substrates for laser applications JW Raring, DF Feezell, NJ Pfister, R Sharma US Patent 9,531,164, 2016 | 261 | 2016 |
| Selective area epitaxy growth method and structure JW Raring, DF Feezell, S Nakamura US Patent App. 12/482,440, 2009 | 257 | 2009 |
| High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Y Zhao, S Tanaka, CC Pan, K Fujito, D Feezell, JS Speck, SP DenBaars, ... Applied physics express 4 (8), 082104, 2011 | 250 | 2011 |
| Self-aligned multi-dielectric-layer lift off process for laser diode stripes JW Raring, DF Feezell, N Pfister US Patent 8,143,148, 2012 | 227 | 2012 |
| Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates JW Raring, DF Feezell US Patent 8,259,769, 2012 | 226 | 2012 |
| Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ... Applied Physics Letters 100 (20), 2012 | 220 | 2012 |
| Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes DF Feezell, MC Schmidt, KC Kim, RM Farrell, DA Cohen, JS Speck, ... US Patent 8,211,723, 2012 | 215 | 2012 |
| Method and structure for manufacture of light emitting diode devices using bulk GaN C Poblenz, MC Schmidt, DF Feezell, JW Raring, R Sharma US Patent 8,252,662, 2012 | 209 | 2012 |
| Optical device structure using miscut GaN substrates for laser applications JW Raring, DF Feezell, NJ Pfister US Patent 8,422,525, 2013 | 208 | 2013 |
| Self-aligned multi-dielectric-layer lift off process for laser diode stripes JW Raring, DF Feezell, N Pfister US Patent 8,728,842, 2014 | 201 | 2014 |
| Group III-nitride lasers: a materials perspective MT Hardy, DF Feezell, SP DenBaars, S Nakamura Materials Today 14 (9), 408-415, 2011 | 193 | 2011 |
| Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers C Holder, JS Speck, SP DenBaars, S Nakamura, D Feezell Applied Physics Express 5 (9), 092104, 2012 | 188 | 2012 |
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraVerified email at engineering.ucsb.edu
