| 2D materials: roadmap to CMOS integration C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018 | 95 | 2018 |
| Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current Q Smets, G Arutchelvan, J Jussot, D Verreck, I Asselberghs, AN Mehta, ... 2019 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2019 | 82 | 2019 |
| Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity D Chiappe, J Ludwig, A Leonhardt, S El Kazzi, AN Mehta, T Nuytten, ... Nanotechnology 29 (42), 425602, 2018 | 64 | 2018 |
| Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness Y Wang, P Ruterana, L Desplanque, S El Kazzi, X Wallart Journal of Applied Physics 109 (2), 2011 | 56 | 2011 |
| Material-Selective Doping of 2D TMDC through AlxOy Encapsulation A Leonhardt, D Chiappe, VV Afanas’ ev, S El Kazzi, I Shlyakhov, ... ACS applied materials & interfaces 11 (45), 42697-42707, 2019 | 53 | 2019 |
| Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET A Alian, J Franco, A Vandooren, Y Mols, A Verhulst, S El Kazzi, ... 2015 IEEE International Electron Devices Meeting (IEDM), 31.7. 1-31.7. 4, 2015 | 43 | 2015 |
| Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer L Desplanque, S El Kazzi, C Coinon, S Ziegler, B Kunert, A Beyer, K Volz, ... Applied Physics Letters 101 (14), 2012 | 37 | 2012 |
| MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates S El Kazzi, W Mortelmans, T Nuytten, J Meersschaut, P Carolan, ... Journal of Applied Physics 123 (13), 2018 | 36 | 2018 |
| Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers D Marinov, JF de Marneffe, Q Smets, G Arutchelvan, KM Bal, E Voronina, ... npj 2D Materials and Applications 5 (1), 17, 2021 | 32 | 2021 |
| Alcohol-based digital etch for III–V vertical nanowires with sub-10 nm diameter W Lu, X Zhao, D Choi, S El Kazzi, JA del Alamo IEEE Electron Device Letters 38 (5), 548-551, 2017 | 31 | 2017 |
| Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction Q Smets, AS Verhulst, S El Kazzi, D Gundlach, CA Richter, A Mocuta, ... IEEE transactions on electron devices 63 (11), 4248-4254, 2016 | 30 | 2016 |
| Covalent functionalization of molybdenum disulfide by chemically activated diazonium salts L Daukiya, J Teyssandier, S Eyley, S El Kazzi, MCR Gonzalez, B Pradhan, ... Nanoscale 13 (5), 2972-2981, 2021 | 27 | 2021 |
| The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism Y Wang, P Ruterana, S Kret, S El Kazzi, L Desplanque, X Wallart Applied Physics Letters 102 (5), 2013 | 27 | 2013 |
| Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces W Mortelmans, S El Kazzi, AN Mehta, D Vanhaeren, T Conard, ... Nanotechnology 30 (46), 465601, 2019 | 23 | 2019 |
| Mechanism of formation of the misfit dislocations at the cubic materials interfaces Y Wang, P Ruterana, S Kret, J Chen, S El Kazzi, L Desplanque, X Wallart Applied Physics Letters 100 (26), 2012 | 23 | 2012 |
| Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs A Alian, S El Kazzi, A Verhulst, A Milenin, N Pinna, T Ivanov, D Lin, ... 2018 IEEE Symposium on VLSI Technology, 133-134, 2018 | 22 | 2018 |
| Record performance Top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets S Ramesh, T Ivanov, V Putcha, A Alian, A Sibaja-Hernandez, ... 2017 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2017 | 21 | 2017 |
| Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP S El Kazzi, L Desplanque, X Wallart, Y Wang, P Ruterana Journal of Applied Physics 111 (12), 2012 | 19 | 2012 |
| Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides J Mo, S El Kazzi, W Mortelmans, AN Mehta, S Sergeant, Q Smets, ... Nanotechnology 31 (12), 125604, 2020 | 18 | 2020 |
| AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs L Desplanque, S El Kazzi, JL Codron, Y Wang, P Ruterana, G Moschetti, ... Applied Physics Letters 100 (26), 2012 | 18 | 2012 |
Quentin SmetsimecVerified email at imec.be
