Dirk Gravesteijn
Dirk Gravesteijn
Professor Emerging Semiconductor Technologies, University of Twente
Verified email at utwente.nl
Title
Cited by
Cited by
Year
Ullmann's encyclopedia of industrial chemistry
F Ullmann, W Gerhartz, YS Yamamoto, FT Campbell, R Pfefferkorn, ...
VCH publishers, 1985
2106*1985
Diffusion in strained Si (Ge)
NEB Cowern, PC Zalm, P Van der Sluis, DJ Gravesteijn, WB De Boer
Physical Review Letters 72 (16), 2585, 1994
2961994
Impurity diffusion via an intermediate species: The B-Si system
NEB Cowern, KTF Janssen, GFA Van de Walle, DJ Gravesteijn
Physical review letters 65 (19), 2434, 1990
1921990
Experiments on atomic-scale mechanisms of diffusion
NEB Cowern, GFA Van de Walle, DJ Gravesteijn, CJ Vriezema
Physical review letters 67 (2), 212, 1991
1681991
Microscale elastic‐strain determination by backscatter Kikuchi diffraction in the scanning electron microscope
KZ Troost, P Van der Sluis, DJ Gravesteijn
Applied Physics Letters 62 (10), 1110-1112, 1993
1351993
Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
PC Zalm, GFA Van De Walle, DJ Gravesteijn, AA Van Gorkum
Applied physics letters 55 (24), 2520-2522, 1989
1231989
Parasitic energy barriers in SiGe HBTs
JW Slotboom, G Streutker, A Pruijmboom, DJ Gravesteijn
IEEE Electron device letters 12 (9), 486-488, 1991
1071991
Materials developments for write-once and erasable phase-change optical recording
DJ Gravesteijn
Applied optics 27 (4), 736-738, 1988
1061988
Non-local impact ionization in silicon devices
JW Slotboom, G Streutker, MJ Van Dort, PH Woerlee, A Pruijmboom, ...
International Electron Devices Meeting 1991 [Technical Digest], 127-130, 1991
1001991
Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers
C Tetelin, X Wallart, JP Nys, L Vescan, DJ Gravesteijn
Journal of applied physics 83 (5), 2842-2846, 1998
731998
Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy
A Pruijmboom, JW Slotboom, DJ Gravesteijn, CW Fredriksz, ...
IEEE electron device letters 12 (7), 357-359, 1991
721991
Diffusion and Electrical Properties of Boron and Arsenic Doped Poly‐Si and Poly‐Ge x Si1− x (x∼ 0.3) as Gate Material for Sub‐0.25 μm Complementary Metal Oxide Semiconductor …
C Salm, DT Van Veen, DJ Gravesteijn, J Holleman, PH Woerlee
Journal of the Electrochemical Society 144 (10), 3665, 1997
681997
Characterization of low-energy (100 eV–10 keV) boron ion implantation
EJH Collart, K Weemers, DJ Gravesteijn, JGM Van Berkum
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
611998
Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells
DT Castro, L Goux, GAM Hurkx, K Attenborough, R Delhougne, J Lisoni, ...
2007 IEEE International Electron Devices Meeting, 315-318, 2007
602007
Single wavelength optical recording in pure, solvent coated infrared dye layers
DJ Gravesteijn, C Steenbergen, J Van der Veen
Optical Storage Media 420, 327-331, 1983
601983
Recording element having a pyrylium or thiopyrylium-squarylium dye layer and new pyrylium or thiopyrylium-squarylium compounds
DJ Gravesteijn, C Steenbergen, J van der Veen, WPM Nijssen
US Patent 4,508,811, 1985
591985
RF characterization and analytical modelling of through silicon vias and coplanar waveguides for 3D integration
YPR Lamy, KB Jinesh, F Roozeboom, DJ Gravesteijn, WFA Besling
IEEE Transactions on Advanced Packaging 33 (4), 1072-1079, 2010
522010
The interaction of Sb overlayers with Si (001)
WFJ Slijkerman, PM Zagwijn, JF Van der Veen, DJ Gravesteijn, ...
Surface science 262 (1-2), 25-32, 1992
511992
Degradation of the reset switching during endurance testing of a phase-change line cell
L Goux, DT Castro, GAM Hurkx, JG Lisoni, R Delhougne, DJ Gravesteijn, ...
IEEE Transactions on Electron Devices 56 (2), 354-358, 2009
452009
Phase‐change optical recording in TeSeSb alloys
CJ Van der Poel, DJ Gravesteijn, W Rippens, H Stockx, CMJ Van Uijen
Journal of applied physics 59 (6), 1819-1821, 1986
421986
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