| Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review N Islam, MFP Mohamed, MFAJ Khan, S Falina, H Kawarada, M Syamsul Crystals 12 (11), 1581, 2022 | 40 | 2022 |
| Ten years progress of electrical detection of heavy metal ions (hmis) using various field-effect transistor (fet) nanosensors: A review S Falina, M Syamsul, NA Rhaffor, S Sal Hamid, KA Mohamed Zain, ... Biosensors 11 (12), 478, 2021 | 25 | 2021 |
| Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review M Haziq, S Falina, AA Manaf, H Kawarada, M Syamsul Micromachines 13 (12), 2133, 2022 | 23 | 2022 |
| Role of carboxyl and amine termination on a boron-doped diamond solution gate field effect transistor (SGFET) for pH sensing S Falina, S Kawai, N Oi, H Yamano, T Kageura, E Suaebah, M Inaba, ... Sensors 18 (7), 2178, 2018 | 14 | 2018 |
| Carboxyl-functionalized graphene SGFET: pH sensing mechanism and reliability of anodization S Falina, M Syamsul, Y Iyama, M Hasegawa, Y Koga, H Kawarada Diamond and Related Materials 91, 15-21, 2019 | 13 | 2019 |
| Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation T Naramura, M Inaba, S Mizuno, K Igarashi, E Kida, SF Mohd Sukri, ... Applied Physics Letters 111 (1), 2017 | 7 | 2017 |
| Two-dimensional non-carbon materials-based electrochemical printed sensors: An updated review S Falina, K Anuar, SA Shafiee, JC Juan, AA Manaf, H Kawarada, ... Sensors 22 (23), 9358, 2022 | 6 | 2022 |
| Over 59 mV pH−1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron‐Doped Diamond Solution‐Gate Field‐Effect … YH Chang, Y Iyama, K Tadenuma, S Kawaguchi, T Takarada, S Falina, ... physica status solidi (a) 218 (5), 2000278, 2021 | 6 | 2021 |
| Status and prospects of heterojunction-based HEMT for next-generation biosensors N Fauzi, RI Mohd Asri, MF Mohamed Omar, AA Manaf, H Kawarada, ... Micromachines 14 (2), 325, 2023 | 5 | 2023 |
| Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT Y Yusuf, MEA Samsudin, MIM Taib, MA Ahmad, MFP Mohamed, ... Crystals 13 (1), 90, 2023 | 3 | 2023 |
| High temperature performance of enhanced endurance hydrogen terminated transparent polycrystalline diamond FET S Falina, H Kawarada, A Abd Manaf, M Syamsul IEEE Electron Device Letters 43 (7), 1101-1104, 2022 | 3 | 2022 |
| New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications MF Packeer Mohamed, MF Mohamed Omar, MF Akbar Jalaludin Khan, ... Micromachines 12 (12), 1497, 2021 | 3 | 2021 |
| Comparison of the Electrical Performance of AlN and HfO2 Passivation Layer in AlGaN/GaN HEMT Z Zulkifli, N Ali, S Falina, H Kawarada, MF Packeer Mohamed, M Syamsul Key Engineering Materials 947, 21-26, 2023 | 1 | 2023 |
| High-sensitivity room temperature p-doped and undoped GaN thin film resistive gas sensor M Hasnan, RIM Asri, Z Hassan, SAA Abdalmohammed, M Nuzaihan, ... International Journal of Nanotechnology 19 (2-5), 418-429, 2022 | 1 | 2022 |
| Feasibility Study of TiOx Encapsulation of Diamond Solution‐Gate Field‐Effect Transistor Metal Contacts for Miniature Biosensor Applications S Falina, K Tanabe, Y Iyama, K Tadenuma, T Bi, YH Chang, AA Manaf, ... physica status solidi (a) 217 (23), 2000634, 2020 | 1 | 2020 |
| Analysis Of The Reliability Of Passivation Layer And Interface Charge On Breakdown Voltage of E-Mode AlGaN/GaN MISHEMTs Device N Islam, MFP Mohamed, FAJ Khan, S Falina, H Kawarada, M Syamsul, ... 2023 IEEE International Symposium on the Physical and Failure Analysis of …, 2023 | | 2023 |
| Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT MHA Hamid, RI Mohd Asri, M Nuzaihan, M Inaba, Z Hassan, H Kawarada, ... Key Engineering Materials 947, 3-8, 2023 | | 2023 |
| Nanomanipulation of Functionalized Gold Nanoparticles on GaN MA Che Seliman, NA Ali Yusup, MA Ahmad, C Ibau, M Nuzaihan, ... Key Engineering Materials 947, 9-14, 2023 | | 2023 |
| Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study M Haziq, N Ali, S Falina, H Kawarada, M Syamsul Key Engineering Materials 947, 15-20, 2023 | | 2023 |
| Ion Sensitive Stainless Steel Vessel for All-solid-state pH Sensing System Incorporating pH Insensitive Diamond Solution Gate Field-effect Transistors YH Chang, Y Iyama, S Kawaguchi, T Takarada, H Sato, R Nomoto, ... IEEE Sensors Journal, 2023 | | 2023 |
