| Synthesis and use of precursors for ALD of group VA element containing thin films V Pore, T Hatanpää, M Ritala, M Leskelä US Patent 10,208,379, 2019 | 373 | 2019 |
| Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction … T Hatanpää, K Väyrynen, M Ritala, M Leskelä US Patent 10,731,249, 2020 | 308 | 2020 |
| Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition M Vehkamäki, T Hatanpää, T Hänninen, M Ritala, M Leskelä Electrochemical and Solid-state letters 2 (10), 504, 1999 | 242 | 1999 |
| Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction … T Hatanpää, K Väyrynen, M Ritala, M Leskelä US Patent App. 16/927,509, 2020 | 237 | 2020 |
| Methods of forming a transition metal containing film on a substrate by a cyclical deposition process T Hatanpää, K Väyrynen, M Ritala, M Leskelä US Patent 11,390,946, 2022 | 236 | 2022 |
| Synthesis and use of precursors for ALD of group VA element containing thin films V Pore, T Hatanpää, M Ritala, M Leskelä US Patent 9,315,896, 2016 | 207 | 2016 |
| Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material K Väyrynen, T Hatanpää, M Ritala, M Leskelä US Patent 11,499,222, 2022 | 179 | 2022 |
| Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material K Väyrynen, T Hatanpää, A Vihervaara, M Ritala, M Leskelä US Patent 11,492,703, 2022 | 178 | 2022 |
| Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth M Mattinen, T Hatanpää, T Sarnet, K Mizohata, K Meinander, PJ King, ... Advanced Materials Interfaces 4 (18), 1700123, 2017 | 132 | 2017 |
| Precursors as enablers of ALD technology: Contributions from University of Helsinki T Hatanpää, M Ritala, M Leskelä Coordination Chemistry Reviews 257 (23-24), 3297-3322, 2013 | 112 | 2013 |
| Bismuth precursors for atomic layer deposition of bismuth-containing oxide films M Vehkamäki, T Hatanpää, M Ritala, M Leskelä Journal of Materials Chemistry 14 (21), 3191-3197, 2004 | 112 | 2004 |
| Lithium phosphate thin films grown by atomic layer deposition J Hämäläinen, J Holopainen, F Munnik, T Hatanpää, M Heikkilä, M Ritala, ... Journal of The Electrochemical Society 159 (3), A259, 2012 | 110 | 2012 |
| Study of a novel ALD process for depositing MgF 2 thin films T Pilvi, T Hatanpää, E Puukilainen, K Arstila, M Bischoff, U Kaiser, ... Journal of Materials Chemistry 17 (48), 5077-5083, 2007 | 96 | 2007 |
| Radical‐enhanced atomic layer deposition of silver thin films using phosphine‐adducted silver carboxylates A Niskanen, T Hatanpaeae, K Arstila, M Leskelä, M Ritala Chemical Vapor Deposition 13 (8), 408-413, 2007 | 92 | 2007 |
| Atomic Layer Deposition of BaTiO3 Thin Films—Effect of Barium Hydroxide Formation M Vehkamäki, T Hatanpää, M Ritala, M Leskelä, S Väyrynen, E Rauhala Chemical Vapor Deposition 13 (5), 239-246, 2007 | 85 | 2007 |
| Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars JD Caldwell, OJ Glembocki, FJ Bezares, MI Kariniemi, JT Niinistö, ... Optics express 19 (27), 26056-26064, 2011 | 79 | 2011 |
| Atomic layer deposition of Ge2Sb2Te5 thin films M Ritala, V Pore, T Hatanpää, M Heikkilä, M Leskelä, K Mizohata, ... Microelectronic Engineering 86 (7-9), 1946-1949, 2009 | 79 | 2009 |
| Properties of [Mg2(thd)4] as a Precursor for Atomic Layer Deposition of MgO Thin Films and Crystal Structures of [Mg2(thd)4] and [Mg(thd)2(EtOH)2] T Hatanpää, J Ihanus, J Kansikas, I Mutikainen, M Ritala, M Leskelä Chemistry of materials 11 (7), 1846-1852, 1999 | 79 | 1999 |
| Atomic Layer Deposition of Ferroelectric Bismuth Titanate Bi4Ti3O12 Thin Films M Vehkamäki, T Hatanpää, M Kemell, M Ritala, M Leskelä Chemistry of materials 18 (16), 3883-3888, 2006 | 66 | 2006 |
| Synthesis and characterisation of cyclopentadienyl complexes of barium: precursors for atomic layer deposition of BaTiO 3 T Hatanpää, M Vehkamäki, I Mutikainen, J Kansikas, M Ritala, M Leskelä Dalton Transactions, 1181-1188, 2004 | 66 | 2004 |
