| Hall effect measurements on InAs nanowires C Blömers, T Grap, MI Lepsa, J Moers, S Trellenkamp, D Grützmacher, ... Applied physics letters 101 (15), 2012 | 127 | 2012 |
| Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer T Rieger, S Heiderich, S Lenk, MI Lepsa, D Grützmacher Journal of crystal growth 353 (1), 39-46, 2012 | 100 | 2012 |
| Molecular beam epitaxy growth of GaAs/InAs core–shell nanowires and fabrication of InAs nanotubes T Rieger, M Luysberg, T Schäpers, D Grützmacher, MI Lepsa Nano letters 12 (11), 5559-5564, 2012 | 93 | 2012 |
| Electronic phase coherence in InAs nanowires C Blomers, MI Lepsa, M Luysberg, D Grutzmacher, H Luth, T Schapers Nano letters 11 (9), 3550-3556, 2011 | 90 | 2011 |
| Self-catalyzed VLS grown InAs nanowires with twinning superlattices T Grap, T Rieger, C Blömers, T Schäpers, D Grützmacher, MI Lepsa Nanotechnology 24 (33), 335601, 2013 | 76 | 2013 |
| Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires C Blömers, T Rieger, P Zellekens, F Haas, MI Lepsa, H Hardtdegen, ... Nanotechnology 24 (3), 035203, 2012 | 66 | 2012 |
| Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires Ö Gül, N Demarina, C Blömers, T Rieger, H Lüth, MI Lepsa, ... Physical Review B 89 (4), 045417, 2014 | 65 | 2014 |
| Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs S Kuhlen, K Schmalbuch, M Hagedorn, P Schlammes, M Patt, M Lepsa, ... Physical review letters 109 (14), 146603, 2012 | 64 | 2012 |
| Hot electron injector Gunn diode for advanced driver assistance systems A Förster, MI Lepsa, D Freundt, J Stock, S Montanari Applied Physics A 87, 545-558, 2007 | 64 | 2007 |
| Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy T Rieger, D Grützmacher, MI Lepsa Nanoscale 7 (1), 356-364, 2015 | 53 | 2015 |
| Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires T Rieger, MI Lepsa, T Schäpers, D Grützmacher Journal of crystal growth 378, 506-510, 2013 | 44 | 2013 |
| Axial strain in GaAs/InAs core-shell nanowires A Biermanns, T Rieger, G Bussone, U Pietsch, D Grützmacher, ... Applied physics letters 102 (4), 2013 | 38 | 2013 |
| Nanoscale charge transport measurements using a double-tip scanning tunneling microscope P Jaschinsky, J Wensorra, MI Lepsa, J Mysliveček, B Voigtländer Journal of applied physics 104 (9), 2008 | 38 | 2008 |
| High frequency investigation of graded gap injectors for GaAs Gunn diodes S Montanari, A Förster, MI Lepsa, H Lüth Solid-state electronics 49 (2), 245-250, 2005 | 38 | 2005 |
| Crystal phase selective growth in GaAs/InAs core–shell nanowires T Rieger, T Schäpers, D Grützmacher, MI Lepsa Crystal growth & design 14 (3), 1167-1174, 2014 | 34 | 2014 |
| Resonant tunneling in nanocolumns improved by quantum collimation J Wensorra, KM Indlekofer, MI Lepsa, A Förster, H Lüth Nano letters 5 (12), 2470-2475, 2005 | 34 | 2005 |
| MBE growth of Al/InAs and Nb/InAs superconducting hybrid nanowire structures NA Güsken, T Rieger, P Zellekens, B Bennemann, E Neumann, MI Lepsa, ... Nanoscale 9 (43), 16735-16741, 2017 | 33 | 2017 |
| Spin dynamics triggered by subterahertz magnetic field pulses Z Wang, M Pietz, J Walowski, A Förster, MI Lepsa, M Münzenberg Journal of applied physics 103 (12), 2008 | 33 | 2008 |
| Fabrication and characterisation of GaAs Gunn diode chips for applications at 77 GHz in automotive industry A Förster, J Stock, S Montanari, MI Lepsa, H Lüth Sensors 6 (4), 350-360, 2006 | 33 | 2006 |
| Crystal phase transformation in self-assembled InAs nanowire junctions on patterned Si substrates T Rieger, D Rosenbach, D Vakulov, S Heedt, T Schäpers, ... Nano letters 16 (3), 1933-1941, 2016 | 32 | 2016 |
