| GaN/NbN epitaxial semiconductor/superconductor heterostructures R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ... Nature 555 (7695), 183-189, 2018 | 138 | 2018 |
| Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer Applied Physics Letters 110 (16), 2017 | 108 | 2017 |
| Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr Applied physics express 4 (5), 055802, 2011 | 101 | 2011 |
| Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation MG Ancona, SC Binari, DJ Meyer Journal of Applied Physics 111 (7), 2012 | 94 | 2012 |
| SiNx/InAlN/AlN/GaN MIS-HEMTs With 10.8 THz-V Johnson Figure of Merit BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao Electron Device Letters, IEEE 35 (5), 527-529, 2014 | 78* | 2014 |
| Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ... IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017 | 71 | 2017 |
| High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ... IEEE electron device letters 34 (2), 199-201, 2013 | 63 | 2013 |
| Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors DA Deen, DF Storm, R Bass, DJ Meyer, DS Katzer, SC Binari, JW Lacis, ... Applied Physics Letters 98 (2), 023506, 2011 | 62 | 2011 |
| Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ... Applied Physics Letters 109 (8), 2016 | 61 | 2016 |
| Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ... Nature communications 11 (1), 2314, 2020 | 58 | 2020 |
| Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ... Chemistry of Materials 32 (3), 1140-1152, 2020 | 55 | 2020 |
| Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger Light: Science & Applications 7 (2), 17150-17150, 2018 | 55 | 2018 |
| Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ... IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016 | 51 | 2016 |
| Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ... Applied Physics Express 8 (8), 085501, 2015 | 47 | 2015 |
| 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ... Applied physics letters 112 (3), 2018 | 46 | 2018 |
| AlN/GaN HEMTs with high‐κ ALD HfO2 or Ta2O5 gate insulation D Deen, D Storm, D Meyer, DS Katzer, R Bass, S Binari, T Gougousi physica status solidi c 8 (7‐8), 2420-2423, 2011 | 44 | 2011 |
| Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ... Applied Physics Express 13 (6), 065509, 2020 | 41 | 2020 |
| Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ... Journal of Crystal Growth 456, 121-132, 2016 | 39 | 2016 |
| Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ... IEEE Electron Device Letters 35 (10), 1013-1015, 2014 | 38 | 2014 |
| Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures DA Deen, DF Storm, DS Katzer, DJ Meyer, SC Binari Solid-State Electronics 54 (6), 613-615, 2010 | 38 | 2010 |
D S KatzerUS Naval Research LaboratoryVerified email at nrl.navy.mil
