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David J. Meyer
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GaN/NbN epitaxial semiconductor/superconductor heterostructures
R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...
Nature 555 (7695), 183-189, 2018
1472018
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 2017
1262017
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics
N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr
Applied physics express 4 (5), 055802, 2011
1052011
Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation
MG Ancona, SC Binari, DJ Meyer
Journal of Applied Physics 111 (7), 2012
962012
SiNx/InAlN/AlN/GaN MIS-HEMTs With 10.8 THz-V Johnson Figure of Merit
BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
Electron Device Letters, IEEE 35 (5), 527-529, 2014
84*2014
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
832017
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ...
Nature communications 11 (1), 2314, 2020
752020
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ...
Chemistry of Materials 32 (3), 1140-1152, 2020
672020
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates
DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
662013
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy
TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ...
Applied Physics Letters 109 (8), 2016
642016
Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors
DA Deen, DF Storm, R Bass, DJ Meyer, DS Katzer, SC Binari, JW Lacis, ...
Applied Physics Letters 98 (2), 023506, 2011
622011
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger
Light: Science & Applications 7 (2), 17150-17150, 2018
582018
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates
DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016
552016
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ...
Applied physics letters 112 (3), 2018
492018
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 8 (8), 085501, 2015
492015
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ...
Applied Physics Express 13 (6), 065509, 2020
472020
AlN/GaN HEMTs with high‐κ ALD HfO2 or Ta2O5 gate insulation
D Deen, D Storm, D Meyer, DS Katzer, R Bass, S Binari, T Gougousi
physica status solidi c 8 (7‐8), 2420-2423, 2011
442011
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
432020
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...
Journal of Crystal Growth 456, 121-132, 2016
432016
Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN
MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer
IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017
422017
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