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geoffrey pourtois
geoffrey pourtois
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10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
9002011
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
E Scalise, M Houssa, G Pourtois, V Afanas’ ev, A Stesmans
Nano Research 5, 43-48, 2012
7442012
Electronic properties of hydrogenated silicene and germanene
M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’Ev, A Stesmans
Applied Physics Letters 98 (22), 2011
4922011
Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymers
D Beljonne, G Pourtois, C Silva, E Hennebicq, LM Herz, RH Friend, ...
Proceedings of the National Academy of Sciences 99 (17), 10982-10987, 2002
4372002
Spin− orbit coupling and intersystem crossing in conjugated polymers: a configuration interaction description
D Beljonne, Z Shuai, G Pourtois, JL Bredas
The Journal of Physical Chemistry A 105 (15), 3899-3907, 2001
3922001
Bandgap opening in oxygen plasma-treated graphene
A Nourbakhsh, M Cantoro, T Vosch, G Pourtois, F Clemente, ...
Nanotechnology 21 (43), 435203, 2010
3802010
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
3412008
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
3282006
Exciton migration in rigid-rod conjugated polymers: an improved Förster model
E Hennebicq, G Pourtois, GD Scholes, LM Herz, DM Russell, C Silva, ...
Journal of the American Chemical Society 127 (13), 4744-4762, 2005
3252005
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
2962009
Can silicon behave like graphene? A first-principles study
M Houssa, G Pourtois, VV Afanas’Ev, A Stesmans
Applied Physics Letters 97 (11), 2010
2642010
Mechanical and electronic properties of thin‐film transistors on plastic, and their integration in flexible electronic applications
P Heremans, AK Tripathi, A de Jamblinne de Meux, ECP Smits, B Hou, ...
Advanced Materials 28 (22), 4266-4282, 2016
2622016
Alternating Oligo(p-phenylene vinylene)−Perylene Bisimide Copolymers:  Synthesis, Photophysics, and Photovoltaic Properties of a New Class of Donor …
EE Neuteboom, SCJ Meskers, PA Van Hal, JKJ Van Duren, EW Meijer, ...
Journal of the American Chemical Society 125 (28), 8625-8638, 2003
2502003
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ...
Applied Physics Letters 104 (9), 2014
2182014
Vibrational properties of silicene and germanene
E Scalise, E Scalise
Vibrational Properties of Defective Oxides and 2D Nanolattices: Insights …, 2014
1892014
Thickness dependence of the resistivity of platinum-group metal thin films
S Dutta, K Sankaran, K Moors, G Pourtois, S Van Elshocht, J Bömmels, ...
Journal of Applied Physics 122 (2), 2017
1852017
Photoinduced electron-transfer processes along molecular wires based on phenylenevinylene oligomers: a quantum-chemical insight
G Pourtois, D Beljonne, J Cornil, MA Ratner, JL Brédas
Journal of the American Chemical Society 124 (16), 4436-4447, 2002
1692002
Electronic properties of two-dimensional hexagonal germanium
M Houssa, G Pourtois, VV Afanas’Ev, A Stesmans
Applied Physics Letters 96 (8), 2010
1522010
First-principles study of strained 2D MoS2
E Scalise, M Houssa, G Pourtois, VV Afanas, A Stesmans
Physica E: Low-dimensional Systems and Nanostructures 56, 416-421, 2014
1502014
Ge dangling bonds at the (100) Ge/GeO2 interface and the viscoelastic properties of GeO2
M Houssa, G Pourtois, M Caymax, M Meuris, MM Heyns, VV Afanas’Ev, ...
Applied Physics Letters 93 (16), 2008
1492008
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