10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
733 2011 Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 E Scalise, M Houssa, G Pourtois, V Afanas’ev, A Stesmans
Nano Research 5 (1), 43-48, 2012
625 2012 Electronic properties of hydrogenated silicene and germanene M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’ Ev, A Stesmans
Applied Physics Letters 98 (22), 223107, 2011
420 2011 Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymers D Beljonne, G Pourtois, C Silva, E Hennebicq, LM Herz, RH Friend, ...
Proceedings of the National Academy of Sciences 99 (17), 10982-10987, 2002
415 2002 Spin− orbit coupling and intersystem crossing in conjugated polymers: a configuration interaction description D Beljonne, Z Shuai, G Pourtois, JL Bredas
The Journal of Physical Chemistry A 105 (15), 3899-3907, 2001
335 2001 Bandgap opening in oxygen plasma-treated graphene A Nourbakhsh, M Cantoro, T Vosch, G Pourtois, F Clemente, ...
Nanotechnology 21 (43), 435203, 2010
334 2010 Exciton migration in rigid-rod conjugated polymers: an improved Förster model E Hennebicq, G Pourtois, GD Scholes, LM Herz, DM Russell, C Silva, ...
Journal of the American Chemical Society 127 (13), 4744-4762, 2005
310 2005 Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
305 2008 Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
303 2006 High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
256 2009 Can silicon behave like graphene? A first-principles study M Houssa, G Pourtois, VV Afanas’ Ev, A Stesmans
Applied Physics Letters 97 (11), 112106, 2010
250 2010 Alternating Oligo(p -phenylene vinylene)−Perylene Bisimide Copolymers: Synthesis, Photophysics, and Photovoltaic Properties of a New Class of Donor … EE Neuteboom, SCJ Meskers, PA Van Hal, JKJ Van Duren, EW Meijer, ...
Journal of the American Chemical Society 125 (28), 8625-8638, 2003
241 2003 Mechanical and electronic properties of thin‐film transistors on plastic, and their integration in flexible electronic applications P Heremans, AK Tripathi, A de Jamblinne de Meux, ECP Smits, B Hou, ...
Advanced Materials 28 (22), 4266-4282, 2016
202 2016 Vibrational properties of silicene and germanene E Scalise
Vibrational Properties of Defective Oxides and 2D Nanolattices, 61-93, 2014
166 2014 Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : A first principles insight S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ...
Applied Physics Letters 104 (9), 092906, 2014
162 2014 Photoinduced electron-transfer processes along molecular wires based on phenylenevinylene oligomers: a quantum-chemical insight G Pourtois, D Beljonne, J Cornil, MA Ratner, JL Brédas
Journal of the American Chemical Society 124 (16), 4436-4447, 2002
159 2002 Electronic properties of two-dimensional hexagonal germanium M Houssa, G Pourtois, VV Afanas’ Ev, A Stesmans
Applied Physics Letters 96 (8), 082111, 2010
133 2010 Ge dangling bonds at the M Houssa, G Pourtois, M Caymax, M Meuris, MM Heyns, VV Afanas’ Ev, ...
Applied Physics Letters 93 (16), 161909, 2008
127 2008 Photophysical properties of ruthenium (II) polyazaaromatic compounds: A theoretical insight G Pourtois, D Beljonne, C Moucheron, S Schumm, ...
Journal of the American Chemical Society 126 (2), 683-692, 2004
127 2004 Two-dimensional hexagonal tin: ab initio geometry, stability, electronic structure and functionalization B Van den Broek, M Houssa, E Scalise, G Pourtois, VV Afanas‘ev, ...
2D Materials 1 (2), 021004, 2014
123 2014 