| Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ... IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017 | 109 | 2017 |
| Dose-rate sensitivity of 65-nm MOSFETs exposed to ultrahigh doses G Borghello, F Faccio, E Lerario, S Michelis, S Kulis, DM Fleetwood, ... IEEE Transactions on Nuclear Science 65 (8), 1482-1487, 2018 | 46 | 2018 |
| Influence of halo implantations on the total ionizing dose response of 28-nm pMOSFETs irradiated to ultrahigh doses S Bonaldo, S Mattiazzo, C Enz, A Baschirotto, A Paccagnella, X Jin, ... IEEE Transactions on Nuclear Science 66 (1), 82-90, 2018 | 42 | 2018 |
| Ionizing-radiation response and low-frequency noise of 28-nm MOSFETs at ultrahigh doses S Bonaldo, S Mattiazzo, C Enz, A Baschirotto, DM Fleetwood, ... IEEE Transactions on Nuclear Science 67 (7), 1302-1311, 2020 | 41 | 2020 |
| A plug, print & play inkjet printing and impedance-based biosensing technology operating through a smartphone for clinical diagnostics G Rosati, M Urban, L Zhao, Q Yang, CCC e Silva, S Bonaldo, C Parolo, ... Biosensors and Bioelectronics 196, 113737, 2022 | 38 | 2022 |
| Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics S Bonaldo, SE Zhao, A O’Hara, M Gorchichko, EX Zhang, S Gerardin, ... IEEE Transactions on Nuclear Science 67 (1), 210-220, 2019 | 37 | 2019 |
| Charge buildup and spatial distribution of interface traps in 65-nm pMOSFETs irradiated to ultrahigh doses S Bonaldo, S Gerardin, X Jin, A Paccagnella, F Faccio, G Borghello, ... IEEE Transactions on Nuclear Science 66 (7), 1574-1583, 2019 | 37 | 2019 |
| TID degradation mechanisms in 16-nm bulk FinFETs irradiated to ultrahigh doses T Ma, S Bonaldo, S Mattiazzo, A Baschirotto, C Enz, A Paccagnella, ... IEEE Transactions on Nuclear Science 68 (8), 1571-1578, 2021 | 29 | 2021 |
| Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors M Gorchichko, EX Zhang, P Wang, S Bonaldo, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 68 (5), 687-696, 2021 | 23 | 2021 |
| Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si SE Zhao, S Bonaldo, P Wang, R Jiang, H Gong, EX Zhang, N Waldron, ... IEEE Transactions on Nuclear Science 66 (7), 1599-1605, 2019 | 23 | 2019 |
| Total-ionizing-dose effects on InGaAs FinFETs with modified gate-stack SE Zhao, S Bonaldo, P Wang, EX Zhang, N Waldron, N Collaert, V Putcha, ... IEEE Transactions on Nuclear Science 67 (1), 253-259, 2019 | 17 | 2019 |
| TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses S Bonaldo, M Gorchichko, EX Zhang, T Ma, S Mattiazzo, M Bagatin, ... IEEE Transactions on Nuclear Science 69 (7), 1444-1452, 2022 | 15 | 2022 |
| DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments S Bonaldo, T Ma, S Mattiazzo, A Baschirotto, C Enz, DM Fleetwood, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2022 | 13 | 2022 |
| Influence of fin and finger number on TID degradation of 16-nm bulk FinFETs irradiated to ultrahigh doses T Ma, S Bonaldo, S Mattiazzo, A Baschirotto, C Enz, A Paccagnella, ... IEEE Transactions on Nuclear Science 69 (3), 307-313, 2021 | 13 | 2021 |
| Dose rate sensitivity of 65 nm MOSFETs exposed to ultra-high doses S Bonaldo 2017 17th European Conference on Radiation and Its Effects on Components and …, 2017 | 11 | 2017 |
| RadFET dose response in the CHARM mixed-field: FLUKA MC simulations M Marzo, S Bonaldo, M Brugger, S Danzeca, RG Alia, A Infantino, ... EPJ Web of Conferences 153, 01006, 2017 | 11 | 2017 |
| Low-frequency noise and defects in copper and ruthenium resistors DM Fleetwood, S Beyne, R Jiang, SE Zhao, P Wang, S Bonaldo, ... Applied Physics Letters 114 (20), 2019 | 9 | 2019 |
| Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates S Bonaldo, EX Zhang, SE Zhao, V Putcha, B Parvais, D Linten, S Gerardin, ... IEEE Transactions on Nuclear Science 67 (7), 1312-1319, 2019 | 8 | 2019 |
| Zs. Tőkei, I. De Wolf, K. Croes, EX Zhang, ML Alles, RD Schrimpf, RA Reed and D. Linten DM Fleetwood, S Beyne, R Jiang, SE Zhao, P Wang, S Bonaldo, ... Appl. Phys. Lett 114, 203501, 2019 | 8 | 2019 |
| RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades E Monteil, M Barbero, D Fougeron, S Godiot, M Menouni, P Pangaud, ... POS PROCEEDINGS OF SCIENCE 343, 1-4, 2018 | 8 | 2018 |
