| 3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity S Imanishi, K Horikawa, N Oi, S Okubo, T Kageura, A Hiraiwa, ... IEEE Electron Device Letters 40 (2), 279-282, 2018 | 99 | 2018 |
| High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures Y Sasama, T Kageura, M Imura, K Watanabe, T Taniguchi, T Uchihashi, ... Nature Electronics 5 (1), 37-44, 2022 | 82 | 2022 |
| Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification H Yamano, S Kawai, K Kato, T Kageura, M Inaba, T Okada, I Higashimata, ... Japanese journal of applied physics 56 (4S), 04CK08, 2017 | 66 | 2017 |
| Nitrogen-terminated diamond surface for nanoscale NMR by shallow nitrogen-vacancy centers S Kawai, H Yamano, T Sonoda, K Kato, JJ Buendia, T Kageura, R Fukuda, ... The Journal of Physical Chemistry C 123 (6), 3594-3604, 2019 | 63 | 2019 |
| Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors N Oi, M Inaba, S Okubo, I Tsuyuzaki, T Kageura, S Onoda, A Hiraiwa, ... Scientific reports 8 (1), 10660, 2018 | 56 | 2018 |
| Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors Y Sasama, T Kageura, K Komatsu, S Moriyama, J Inoue, M Imura, ... Journal of Applied Physics 127 (18), 2020 | 40 | 2020 |
| Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond T Kageura, K Kato, H Yamano, E Suaebah, M Kajiya, S Kawai, M Inaba, ... Applied Physics Express 10 (5), 055503, 2017 | 36 | 2017 |
| Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) S Kono, T Kageura, Y Hayashi, SG Ri, T Teraji, D Takeuchi, M Ogura, ... Diamond and Related Materials 93, 105-130, 2019 | 35 | 2019 |
| Over 12000 A/cm2 and 3.2 m cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET M Iwataki, N Oi, K Horikawa, S Amano, J Nishimura, T Kageura, M Inaba, ... IEEE Electron Device Letters 41 (1), 111-114, 2019 | 25 | 2019 |
| Heteroepitaxial diamond field-effect transistor for high voltage applications M Syamsul, N Oi, S Okubo, T Kageura, H Kawarada IEEE Electron Device Letters 39 (1), 51-54, 2017 | 23 | 2017 |
| Role of carboxyl and amine termination on a boron-doped diamond solution gate field effect transistor (SGFET) for pH sensing S Falina, S Kawai, N Oi, H Yamano, T Kageura, E Suaebah, M Inaba, ... Sensors 18 (7), 2178, 2018 | 14 | 2018 |
| Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond Y Takahide, Y Sasama, M Tanaka, H Takeya, Y Takano, T Kageura, ... Physical Review B 94 (16), 161301, 2016 | 14 | 2016 |
| Superconductivity in nano-and micro-patterned high quality single crystalline boron-doped diamond films T Kageura, M Hideko, I Tsuyuzaki, S Amano, A Morishita, T Yamaguchi, ... Diamond and Related Materials 90, 181-187, 2018 | 13 | 2018 |
| Irradiation-induced modification of the superconducting properties of heavily-boron-doped diamond DL Creedon, Y Jiang, K Ganesan, A Stacey, T Kageura, H Kawarada, ... Physical Review Applied 10 (4), 044016, 2018 | 10 | 2018 |
| Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure T Kageura, M Hideko, I Tsuyuzaki, A Morishita, A Kawano, Y Sasama, ... Scientific reports 9 (1), 15214, 2019 | 9 | 2019 |
| Charge stability of shallow single nitrogen-vacancy centers in lightly boron-doped diamond T Kageura, Y Sasama, C Shinei, T Teraji, K Yamada, S Onoda, ... Carbon 192, 473-481, 2022 | 6 | 2022 |
| Vertical edge graphite layer on recovered diamond (001) after high‐dose ion implantation and high‐temperature annealing M Inaba, A Seki, K Sato, T Kushida, T Kageura, H Yamano, A Hiraiwa, ... physica status solidi (b) 254 (9), 1700040, 2017 | 6 | 2017 |
| Highly aligned 2D NV ensemble fabrication from nitrogen-terminated (111) surface T Tatsuishi, K Kanehisa, T Kageura, T Sonoda, Y Hata, K Kawakatsu, ... Carbon 180, 127-134, 2021 | 4 | 2021 |
| Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering T Kusaba, P Sittimart, Y Katamune, T Kageura, H Naragino, S Ohmagari, ... Applied Physics Express 16 (10), 105503, 2023 | 2 | 2023 |
| Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature A Morishita, S Amano, I Tsuyuzaki, T Kageura, Y Takahashi, M Tachiki, ... Carbon 181, 379-388, 2021 | 2 | 2021 |
