| Efficient Spin‐Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr2Ge2Te6 V Ostwal, T Shen, J Appenzeller Advanced Materials 32 (7), 1906021, 2020 | 103 | 2020 |
| Vertical versus lateral two-dimensional heterostructures: on the topic of atomically abrupt p/n-junctions R Zhou, V Ostwal, J Appenzeller Nano letters 17 (8), 4787-4792, 2017 | 82 | 2017 |
| Memory applications from 2D materials CC Chiang, V Ostwal, P Wu, CS Pang, F Zhang, Z Chen, J Appenzeller Applied Physics Reviews 8 (2), 2021 | 60 | 2021 |
| Spin-torque devices with hard axis initialization as stochastic binary neurons V Ostwal, P Debashis, R Faria, Z Chen, J Appenzeller Scientific reports 8 (1), 16689, 2018 | 44 | 2018 |
| A novel compound synapse using probabilistic spin-orbit-torque switching for MTJ based deep neural networks V Ostwal, R Zand, R DeMara, J Appenzeller IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019 | 36 | 2019 |
| Spin–orbit torque-controlled magnetic tunnel junction with low thermal stability for tunable random number generation V Ostwal, J Appenzeller IEEE Magnetics Letters 10, 1-5, 2019 | 34 | 2019 |
| From charge to spin and spin to charge: Stochastic magnets for probabilistic switching KY Camsari, P Debashis, V Ostwal, AZ Pervaiz, T Shen, Z Chen, S Datta, ... Proceedings of the IEEE 108 (8), 1322-1337, 2020 | 30 | 2020 |
| Hardware implementation of Bayesian network building blocks with stochastic spintronic devices P Debashis, V Ostwal, R Faria, S Datta, J Appenzeller, Z Chen Scientific reports 10 (1), 16002, 2020 | 23 | 2020 |
| An ultra-compact and low power neuron based on SOI platform V Ostwal, R Meshram, B Rajendran, U Ganguly 2015 International Symposium on VLSI Technology, Systems and Applications, 1-2, 2015 | 18 | 2015 |
| Spin-orbit torque based magnetization switching in Pt/Cu/[Co/Ni] 5 multilayer structures V Ostwal, A Penumatcha, YM Hung, AD Kent, J Appenzeller Journal of Applied Physics 122 (21), 2017 | 10 | 2017 |
| Demonstration of a pseudo-magnetization based simultaneous write and read operation in a Co60Fe20B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure T Shen, V Ostwal, KY Camsari, J Appenzeller Scientific reports 10 (1), 10791, 2020 | 9 | 2020 |
| Observation of impact ionization at sub-0.5 V and resultant improvement in ideality in I-NPN selector device by Si epitaxy for RRAM applications B Das, R Meshram, V Ostwal, J Schulze, U Ganguly 72nd Device Research Conference, 139-140, 2014 | 6 | 2014 |
| High performance sub-430° C epitaxial silicon PIN selector for 3D RRAM R Mandapati, S Shrivastava, B Das, V Ostwal, J Schulze, U Ganguly 72nd Device Research Conference, 241-242, 2014 | 3 | 2014 |
| Voltage designability: An enabler for selector technology R Mandapati, B Das, V Ostwal, U Ganguly 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2014 | 2 | 2014 |
| Demonstration of a strain-mediated magnetoelectric write and read unit in a Co60Fe20B20/Pb (Mg1/3Nb2/3) 0.7 Ti0. 3O3 heterostructure T Shen, V Ostwal, KY Camsari, J Appenzeller arXiv preprint arXiv:1901.01368, 2019 | 1 | 2019 |
| A circuit model for a Si-based biomimetic synaptic time-keeping device V Ostwal, B Rajendran, U Ganguly 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 1 | 2015 |
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
