| A 271.8 nm deep-ultraviolet laser diode for room temperature operation Z Zhang, M Kushimoto, T Sakai, N Sugiyama, LJ Schowalter, C Sasaoka, ... Applied Physics Express 12 (12), 124003, 2019 | 304 | 2019 |
| Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ... Applied Physics Letters 112 (18), 2018 | 182 | 2018 |
| Experimental observation of high intrinsic thermal conductivity of AlN Z Cheng, YR Koh, A Mamun, J Shi, T Bai, K Huynh, L Yates, Z Liu, R Li, ... Physical Review Materials 4 (4), 044602, 2020 | 122 | 2020 |
| Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown H Fukushima, S Usami, M Ogura, Y Ando, A Tanaka, M Deki, ... Applied Physics Express 12 (2), 026502, 2019 | 83 | 2019 |
| Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Y Robin, SY Bae, TV Shubina, M Pristovsek, EA Evropeitsev, DA Kirilenko, ... Scientific Reports 8 (1), 7311, 2018 | 61 | 2018 |
| On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR T Sakai, M Kushimoto, Z Zhang, N Sugiyama, LJ Schowalter, Y Honda, ... Applied Physics Letters 116 (12), 2020 | 59 | 2020 |
| Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability H Fukushima, S Usami, M Ogura, Y Ando, A Tanaka, M Deki, ... Japanese Journal of Applied Physics 58 (SC), SCCD25, 2019 | 54 | 2019 |
| Design and characterization of a low-optical-loss UV-C laser diode Z Zhang, M Kushimoto, T Sakai, N Sugiyama, LJ Schowalter, C Sasaoka, ... Japanese Journal of Applied Physics 59 (9), 094001, 2020 | 41 | 2020 |
| Optically pumped lasing properties of InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates M Kushimoto, T Tanikawa, Y Honda, H Amano Applied Physics Express 8 (2), 022702, 2015 | 36 | 2015 |
| Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes Z Zhang, M Kushimoto, M Horita, N Sugiyama, LJ Schowalter, C Sasaoka, ... Applied Physics Letters 117 (15), 2020 | 35 | 2020 |
| Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing Z Zhang, M Kushimoto, A Yoshikawa, K Aoto, C Sasaoka, LJ Schowalter, ... Applied Physics Letters 121 (22), 2022 | 34 | 2022 |
| Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection Z Zhang, M Kushimoto, A Yoshikawa, K Aoto, LJ Schowalter, C Sasaoka, ... Applied Physics Express 15 (4), 041007, 2022 | 34 | 2022 |
| Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers Y Matsukura, T Inazu, C Pernot, N Shibata, M Kushimoto, M Deki, ... Applied Physics Express 14 (8), 084004, 2021 | 31 | 2021 |
| Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: From injection efficiency to mid-gap state generation F Piva, C De Santi, M Deki, M Kushimoto, H Amano, H Tomozawa, ... Photonics Research 8 (11), 1786-1791, 2020 | 30 | 2020 |
| m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates A Tanaka, Y Ando, K Nagamatsu, M Deki, H Cheong, B Ousmane, ... physica status solidi (a) 215 (9), 1700645, 2018 | 24 | 2018 |
| Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism X Yang, S Nitta, M Pristovsek, Y Liu, Y Liao, M Kushimoto, Y Honda, ... 2D Materials 7 (1), 015004, 2019 | 23 | 2019 |
| Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes S Usami, R Miyagoshi, A Tanaka, K Nagamatsu, M Kushimoto, M Deki, ... physica status solidi (a) 214 (8), 1600837, 2017 | 23 | 2017 |
| Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations K Nagata, H Makino, H Miwa, S Matsui, S Boyama, Y Saito, M Kushimoto, ... Applied Physics Express 14 (8), 084001, 2021 | 22 | 2021 |
| Study of radiation detection properties of GaN pn diode M Sugiura, M Kushimoto, T Mitsunari, K Yamashita, Y Honda, H Amano, ... Japanese Journal of Applied Physics 55 (5S), 05FJ02, 2016 | 22 | 2016 |
| Stability and degradation of AlGaN-based UV-B LEDs: role of doping and semiconductor defects F Piva, C De Santi, M Deki, M Kushimoto, H Amano, H Tomozawa, ... Microelectronics Reliability 100, 113418, 2019 | 18 | 2019 |
