Hongping Zhao

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Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, and BMEVerified email at adelaide.edu.au
Zixuan FengThe Ohio State UniversityVerified email at osu.edu
Jing ZhangAssociate Professor, Rochester Institute of TechnologyVerified email at rit.edu
A F M Anhar Uddin BhuiyanPresidential Fellow at The Ohio State UniversityVerified email at osu.edu
Lu HanCase Western Reserve UniversityVerified email at case.edu
Subrina RafiqueCase Western Reserve UniversityVerified email at case.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
Md Rezaul KarimPhD, The Ohio State UniversityVerified email at osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
Kathleen KashProfessor of Physics, Case Western Reserve UniversityVerified email at case.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityVerified email at osu.edu
Steven RingelThe Ohio State UniversityVerified email at osu.edu
Shin MouAir Force Research LaboratoryVerified email at us.af.mil
Yuxuan ZhangThe Ohio State UniversityVerified email at osu.edu
Adam T. NealAir Force Research LabVerified email at us.af.mil
Baishakhi MazumderUniversity at BuffaloVerified email at buffalo.edu
Marko J. TadjerNaval Research LaboratoryVerified email at nrl.navy.mil
Philip FengProfessor of Electrical & Computer Engineering, Graduate Faculty in Physics, University of FloridaVerified email at ufl.edu
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
Leonard BrillsonThe Ohio State UniversityVerified email at osu.edu

Hongping Zhao

Professor of Electrical & Computer Engineering, Materials Science & Engineering, OSU

Verified email at osu.edu - Homepage

wide and ultrawide bandgap semiconductor materials and devices III-nitridesII-IV-nitridesIII-Oxides electronic and optoelectro


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu Optics express 19 (104), A991-A1007, 2011	598	2011
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes H Zhao, RA Arif, YK Ee, N Tansu IEEE Journal of Quantum Electronics 45 (1), 66-78, 2008	239	2008
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes H Zhao, G Liu, RA Arif, N Tansu Solid-State Electronics 54 (10), 1119-1124, 2010	231	2010
Homoepitaxial growth of β-Ga₂O₃ thin films by low pressure chemical vapor deposition S Rafique, L Han, MJ Tadjer, JA Freitas Jr, NA Mahadik, H Zhao Applied Physics Letters 108 (18), 182105, 2016	201	2016
Donors and deep acceptors in β-Ga₂O₃ AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 062101, 2018	200	2018
MOCVD homoepitaxy of Si-doped (010) β-Ga₂O₃ thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 250601, 2019	198	2019
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes H Zhao, G Liu, N Tansu Applied Physics Letters 97 (13), 131114, 2010	196	2010
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers J Zhang, H Zhao, N Tansu Applied Physics Letters 97 (11), 111105, 2010	194	2010
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes H Zhao, G Liu, J Zhang, RA Arif, N Tansu Journal of Display Technology 9 (4), 212-225, 2013	191	2013
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ... Applied Physics Letters 95 (6), 061104, 2009	185	2009
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ... Applied Physics Letters 95 (6), 061104, 2009	184	2009
III-nitride photonics N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee IEEE Photonics Journal 2 (2), 241-248, 2010	168	2010
Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes RA Arif, H Zhao, YK Ee, N Tansu IEEE Journal of Quantum Electronics 44 (6), 573-580, 2008	152	2008
Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses YK Ee, P Kumnorkaew, RA Arif, H Tong, H Zhao, JF Gilchrist, N Tansu IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1218-1225, 2009	149	2009
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes J Zhang, H Zhao, N Tansu Applied physics letters 98 (17), 171111, 2011	147	2011
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm H Zhao, RA Arif, N Tansu IEEE Journal of selected topics in quantum electronics 15 (4), 1104-1114, 2009	146	2009
Type-II InGaN-GaNAs quantum wells for lasers applications RA Arif, H Zhao, N Tansu Applied Physics Letters 92 (1), 011104, 2008	133	2008
Optical gain characteristics of staggered InGaN quantum wells lasers H Zhao, N Tansu Journal of Applied Physics 107 (11), 113110, 2010	129	2010
Heteroepitaxy of N-type β-Ga₂O₃ thin films on sapphire substrate by low pressure chemical vapor deposition S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao Applied Physics Letters 109 (13), 132103, 2016	125	2016
Self-consistent gain analysis of type-II ‘’ InGaN–GaNAs quantum well lasers H Zhao, RA Arif, N Tansu Journal of Applied Physics 104 (4), 043104, 2008	119	2008

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