Adrian Chasin
Adrian Chasin
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TitleCited byYear
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
H Mertens, R Ritzenthaler, A Hikavyy, MS Kim, Z Tao, K Wostyn, SA Chew, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts
A Chasin, S Steudel, K Myny, M Nag, TH Ke, S Schols, J Genoe, G Gielen, ...
Applied Physics Letters 101 (11), 113505, 2012
Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag
K Myny, M RockelÚ, A Chasin, DV Pham, J Steiger, S Botnaras, D Weber, ...
IEEE Transactions on Electron Devices 61 (7), 2387-2393, 2014
Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
H Mertens, R Ritzenthaler, A Chasin, T Schram, E Kunnen, A Hikavyy, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2016
Gigahertz operation of a-IGZO Schottky diodes
A Chasin, M Nag, A Bhoolokam, K Myny, S Steudel, S Schols, J Genoe, ...
IEEE transactions on electron devices 60 (10), 3407-3412, 2013
Single‐source dual‐layer amorphous IGZO thin‐film transistors for display and circuit applications
M Nag, A Chasin, M Rockele, S Steudel, K Myny, A Bhoolokam, A Tripathi, ...
Journal of the Society for Information Display 21 (3), 129-136, 2013
High-performance a-IGZO thin film diode as selector for cross-point memory application
A Chasin, L Zhang, A Bhoolokam, M Nag, S Steudel, B Govoreanu, ...
IEEE electron device letters 35 (6), 642-644, 2014
An integrated a-IGZO UHF energy harvester for passive RFID tags
A Chasin, V Volskiy, M Libois, K Myny, M Nag, M RockelÚ, ...
IEEE Transactions on Electron Devices 61 (9), 3289-3295, 2014
High performance a‐IGZO thin‐film transistors with mf‐PVD SiO2 as an etch‐stop‐layer
M Nag, S Steudel, A Bhoolokam, A Chasin, M Rockele, K Myny, J Maas, ...
Journal of the Society for Information Display 22 (1), 23-28, 2014
Novel back‐channel‐etch process flow based a‐IGZO TFTs for circuit and display applications on PEN foil
M Nag, M Rockele, S Steudel, A Chasin, K Myny, A Bhoolokam, ...
Journal of the Society for Information Display 21 (9), 369-375, 2013
Back-channel-etch amorphous indium–gallium–zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation
M Nag, A Bhoolokam, S Steudel, A Chasin, K Myny, J Maas, ...
Japanese Journal of Applied Physics 53 (11), 111401, 2014
Scaling down of organic complementary logic gates for compact logic on foil
TH Ke, R MŘller, B Kam, M Rockele, A Chasin, K Myny, S Steudel, ...
Organic Electronics 15 (6), 1229-1234, 2014
Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells
A Veloso, B Parvais, P Matagne, E Simoen, T Huynh-Bao, V Paraschiv, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
A high power density electrostatic vibration-to-electric energy converter based on an in-plane overlap plate (IPOP) mechanism
AM Paracha, P Basset, F Marty, AV Chasin, P Poulichet, T Bourouina
arXiv preprint arXiv:0802.3063, 2008
Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors
M Nag, R Muller, S Steudel, S Smout, A Bhoolokam, K Myny, S Schols, ...
Journal of Information Display 16 (2), 111-117, 2015
Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors
H Arora, PE Malinowski, A Chasin, D Cheyns, S Steudel, S Schols, ...
Applied Physics Letters 106 (14), 40_1, 2015
Flexible NAND-like organic ferroelectric memory array
B Kam, TH Ke, A Chasin, M Tyagi, C Cristoferi, K Tempelaars, ...
IEEE electron device letters 35 (5), 539-541, 2014
UHF IGZO Schottky diode
A Chasin, S Steudel, F Vanaverbeke, K Myny, M Nag, TH Ke, S Schols, ...
2012 International Electron Devices Meeting, 12.4. 1-12.4. 4, 2012
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ...
Microelectronics Reliability 81, 186-194, 2018
NBTI in Replacement Metal Gate SiGe core FinFETs: Impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneals
J Franco, B Kaczer, A Chasin, H Mertens, L┼ Ragnarsson, R Ritzenthaler, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 4B-2-1-4B-2-7, 2016
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