The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney Journal of Applied Physics 111 (11), 2012 | 230 | 2012 |
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ... Applied Physics Letters 102 (24), 2013 | 182 | 2013 |
Phonon interaction of single excitons and biexcitons F Gindele, K Hild, W Langbein, U Woggon Physical Review B 60 (4), R2157, 1999 | 114 | 1999 |
Impact of alloy disorder on the band structure of compressively strained GaBiAs M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ... Physical Review B—Condensed Matter and Materials Physics 87 (11), 115104, 2013 | 97 | 2013 |
Recombination mechanisms and band alignment of GaAs-1-xBix/GaAs light emitting diodes DABTT N Hossain, IP Marko, SR Jin, K Hild, SJ. Sweeney, RB Lewis Appl Phys Lett 100 (5), 2012 | 81 | 2012 |
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi IP Marko, P Ludewig, ZL Bushell, SR Jin, K Hild, Z Batool, S Reinhard, ... Journal of Physics D: Applied Physics 47 (34), 345103, 2014 | 78 | 2014 |
Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications IP Marko, Z Batool, K Hild, SR Jin, N Hossain, TJC Hosea, JP Petropoulos, ... Applied Physics Letters 101 (22), 2012 | 63 | 2012 |
Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs) AB Ikyo, IP Marko, K Hild, AR Adams, S Arafin, MC Amann, SJ Sweeney Scientific reports 6 (1), 1-6, 2016 | 58 | 2016 |
Huge binding energy of localized biexcitons in CdS/ZnS quantum structures U Woggon, K Hild, F Gindele, W Langbein, M Hetterich, M Grün, ... Physical Review B 61 (19), 12632, 2000 | 47 | 2000 |
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, ... Semiconductor Science and Technology 30 (9), 094008, 2015 | 46 | 2015 |
The potential role of bismide alloys in future photonic devices SJ Sweeney, Z Batool, K Hild, SR Jin, TJC Hosea 2011 13th International Conference on Transparent Optical Networks, 1-4, 2011 | 45 | 2011 |
Relationship between human pupillary light reflex and circadian system status MA Bonmati-Carrion, K Hild, C Isherwood, SJ Sweeney, VL Revell, ... PLoS One 11 (9), e0162476, 2016 | 41 | 2016 |
Temperature-dependent line widths of single excitons and biexcitons F Gindele, K Hild, W Langbein, U Woggon Journal of luminescence 87, 381-383, 2000 | 39 | 2000 |
GaAs 1− x Bi x/GaN y As 1− y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near-and mid-infrared photonics CA Broderick, S Jin, IP Marko, K Hild, P Ludewig, ZL Bushell, W Stolz, ... Scientific reports 7 (1), 1-9, 2017 | 34 | 2017 |
Growth and characterisation of Ga (NAsBi) alloy by metal–organic vapour phase epitaxy ZL Bushell, P Ludewig, N Knaub, Z Batool, K Hild, W Stolz, SJ Sweeney, ... Journal of crystal growth 396, 79-84, 2014 | 34 | 2014 |
Carrier recombination in quantum well lasers K Hild, SJ Sweeney, S Wright, DA Lock, SR Jin, IP Marko, SR Johnson, ... Applied Physics Letters 89 (17), 173509, 2006 | 31 | 2006 |
Effect of single and combined monochromatic light on the human pupillary light response MA Bonmati-Carrion, K Hild, CM Isherwood, SJ Sweeney, VL Revell, ... Frontiers in neurology 9, 1019, 2018 | 21 | 2018 |
MOVPE growth and characterization of quaternary Ga (PAsBi)/GaAs alloys for optoelectronic applications L Nattermann, P Ludewig, N Knaub, NW Rosemann, T Hepp, E Sterzer, ... Applied Materials Today 5, 209-214, 2016 | 19 | 2016 |
The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers N Hossain, K Hild, SR Jin, SQ Yu, SR Johnson, D Ding, YH Zhang, ... Applied Physics Letters 102 (4), 2013 | 14 | 2013 |
Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements G Blume, K Hild, IP Marko, TJC Hosea, SQ Yu, SA Chaparro, N Samal, ... Journal of Applied Physics 112 (3), 2012 | 13 | 2012 |