| Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities T Grasser Microelectronics Reliability 52 (1), 39-70, 2012 | 467 | 2012 |
| The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011 | 458 | 2011 |
| Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ... 2010 IEEE International Reliability Physics Symposium, 26-32, 2010 | 338 | 2010 |
| A review of hydrodynamic and energy-transport models for semiconductor device simulation T Grasser, TW Tang, H Kosina, S Selberherr Proceedings of the IEEE 91 (2), 251-274, 2003 | 328 | 2003 |
| The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer 2010 IEEE International Reliability Physics Symposium, 16-25, 2010 | 320 | 2010 |
| A two-stage model for negative bias temperature instability T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel 2009 IEEE international reliability physics symposium, 33-44, 2009 | 266 | 2009 |
| Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ... 2008 IEEE International Reliability Physics Symposium, 20-27, 2008 | 259 | 2008 |
| The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress H Reisinger, T Grasser, W Gustin, C Schlünder 2010 IEEE International Reliability Physics Symposium, 7-15, 2010 | 251 | 2010 |
| Analytic modeling of the bias temperature instability using capture/emission time maps T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ... 2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011 | 194 | 2011 |
| The universality of NBTI relaxation and its implications for modeling and characterization T Grasser, W Gos, V Sverdlov, B Kaczer 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 187 | 2007 |
| Atomistic approach to variability of bias-temperature instability in circuit simulations B Kaczer, S Mahato, VV de Almeida Camargo, M Toledano-Luque, ... 2011 International Reliability Physics Symposium, XT. 3.1-XT. 3.5, 2011 | 161 | 2011 |
| Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors T Grasser, H Reisinger, PJ Wagner, B Kaczer Physical Review B 82 (24), 245318, 2010 | 159 | 2010 |
| Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability T Grasser, B Kaczer, P Hehenberger, W Gos, R O'connor, H Reisinger, ... 2007 IEEE International Electron Devices Meeting, 801-804, 2007 | 144 | 2007 |
| The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D Materials 3 (3), 035004, 2016 | 143 | 2016 |
| Defects in microelectronic materials and devices DM Fleetwood, RD Schrimpf CRC press, 2008 | 143 | 2008 |
| Long-term stability and reliability of black phosphorus field-effect transistors YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ... ACS nano 10 (10), 9543-9549, 2016 | 137 | 2016 |
| Bias temperature instability for devices and circuits T Grasser Springer Science & Business Media, 2013 | 135 | 2013 |
| Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices—Application to NBTI B Kaczer, PJ Roussel, T Grasser, G Groeseneken IEEE Electron Device Letters 31 (5), 411-413, 2010 | 133 | 2010 |
| Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 133 | 2009 |
| Recent advances in understanding the bias temperature instability T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... 2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010 | 126 | 2010 |
Ben KaczerimecVerified email at imec.be
