Tibor Grasser
Tibor Grasser
Professor at TU Wien, Head of Institute for Microelectronics, Fellow IEEE
Geverifieerd e-mailadres voor iue.tuwien.ac.at - Homepage
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The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
4032011
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
T Grasser
Microelectronics Reliability 52 (1), 39-70, 2012
3662012
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
3002010
A review of hydrodynamic and energy-transport models for semiconductor device simulation
T Grasser, TW Tang, H Kosina, S Selberherr
Proceedings of the IEEE 91 (2), 251-274, 2003
2852003
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer
2010 IEEE International Reliability Physics Symposium, 16-25, 2010
2822010
A two-stage model for negative bias temperature instability
T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel
2009 IEEE international reliability physics symposium, 33-44, 2009
2312009
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress
H Reisinger, T Grasser, W Gustin, C Schlünder
2010 IEEE International Reliability Physics Symposium, 7-15, 2010
2162010
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
2122008
The universality of NBTI relaxation and its implications for modeling and characterization
T Grasser, W Gos, V Sverdlov, B Kaczer
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
1702007
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
1632011
Atomistic approach to variability of bias-temperature instability in circuit simulations
B Kaczer, S Mahato, VV de Almeida Camargo, M Toledano-Luque, ...
2011 International Reliability Physics Symposium, XT. 3.1-XT. 3.5, 2011
1482011
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
T Grasser, H Reisinger, PJ Wagner, B Kaczer
Physical Review B 82 (24), 245318, 2010
1342010
Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
T Grasser, B Kaczer, P Hehenberger, W Gos, R O'connor, H Reisinger, ...
2007 IEEE International Electron Devices Meeting, 801-804, 2007
1312007
Defects in microelectronic materials and devices
DM Fleetwood, RD Schrimpf
CRC press, 2008
1252008
Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices—Application to NBTI
B Kaczer, PJ Roussel, T Grasser, G Groeseneken
IEEE Electron Device Letters 31 (5), 411-413, 2010
1192010
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1192009
Recent advances in understanding the bias temperature instability
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010
1122010
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, T Grasser, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 152-153, 2011
1112011
NBTI from the perspective of defect states with widely distributed time scales
B Kaczer, T Grasser, J Martin-Martinez, E Simoen, M Aoulaiche, ...
2009 IEEE International Reliability Physics Symposium, 55-60, 2009
1042009
Evidence that two tightly coupled mechanisms are responsible for negative bias temperature instability in oxynitride MOSFETs
T Grasser, B Kaczer
IEEE Transactions on Electron Devices 56 (5), 1056-1062, 2009
1042009
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Artikelen 1–20