Andrian V. Kuchuk

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	All	Since 2016
Citations	969	558
h-index	17	12
i10-index	36	15

140

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200620072008200920102011201220132014201520162017201820192020202118 10 19 22 38 46 50 56 60 73 105 94 123 113 117 6

Co-authors

Vasyl P. Kladko, V.P. Klad'ko, V. Kladk...Corresponding Member of NAS of Ukraine, Professor, Institute of Semiconductors Physics NAS ofVerified email at isp.kiev.ua
Belyaev A.E.Institute of semiconductor physicsVerified email at isp.kiev.ua
Gregory SalamoProfessor of Physics, University of ArkansasVerified email at uark.edu
Morgan E. WareUniversity of ArkansasVerified email at uark.edu
Y. Mazur, Yuriy Mazur, Yu. I. Mazur, Yu...Institute for Nanoscience and Engineering, University of ArkansasVerified email at uark.edu
P M Lytvyn, P M Litvin, П М ЛитвинSenior Researcher, V.Lashkaryov Institute of Semiconductor Physics NAS UkraineVerified email at isp.kiev.ua
Renata RatajczakNational Centre for Nuclear Resarch (NCBJ)Verified email at ncbj.gov.pl
Shui-Qing (Fisher) YuUniversity of ArkansasVerified email at uark.edu
Mourad BenamaraInstitute for Nanoscience & Engineering, University of ArkansasVerified email at uark.edu
Volodymyr SheremetBilkent UniversityVerified email at bilkent.edu.tr
Lytvyn Oksana, Литвин ОксанаКиївський університет імені Бориса ГрінченкаVerified email at kubg.edu.ua
Олександр Коломис; O F Kolomys; A...Інститут фізики напівпровідників ім. В.Є. Лашкарьова НАН УкраїниVerified email at isp.kiev.ua
Wei DuAssistant Professor, Department of Electrical Engineering and Physics, Wilkes UniversityVerified email at wilkes.edu
Roman MinikayevInstitute of Physics PAS, Warsaw Verified email at ifpan.edu.pl
Larysa KhomenkovaV. Lashkaryov Institute of semiconductor physics of NASUVerified email at isp.kiev.ua
Eric DeCuir JrU.S. Army Research LaboratoryVerified email at mail.mil
Richard A. SorefResearch Professor of Engineering, The University of Massachusetts at BostonVerified email at rcn.com
Greg SunProfessor and Founding Chair of Engineering Department, UMass BostonVerified email at umb.edu
M. O. ManasrehU of AVerified email at uark.edu
Aboozar MoslehAssistant Professor of Nanoscience, University of Arkansas at Pine BluffVerified email at uapb.edu

Andrian V. Kuchuk

Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, USA

Verified email at uark.edu

Materials science X-ray diffraction Nanostructures Nanotechnology


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Low-temperature method for thermochromic high ordered VO2 phase formation V Melnik, I Khatsevych, V Kladko, A Kuchuk, V Nikirin, B Romanyuk Materials Letters 68, 215-217, 2012	59	2012
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ... Nanoscale research letters 7 (1), 1-9, 2012	38	2012
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ... Semiconductors 42 (6), 689-693, 2008	36*	2008
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ... Optics letters 42 (3), 387-390, 2017	35	2017
Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ... Microelectronic Engineering 85 (10), 2142-2145, 2008	34	2008
Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide A Kuchuk, V Kladko, M Guziewicz, A Piotrowska, R Minikayev, A Stonert, ... Journal of Physics: Conference Series 100 (4), 042003, 2008	34	2008
Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes AE Belyaev, VV Basanets, NS Boltovets, AV Zorenko, LM Kapitanchuk, ... Semiconductors 45 (2), 253-259, 2011	28*	2011
Ni-based ohmic contacts to n-type 4H-SiC: the formation mechanism and thermal stability AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz, R Ratajczak, ... Advances in Condensed Matter Physics 2016, 2016	25	2016
X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ... Semiconductor physics quantum electronics & optoelectronics, 2013	22	2013
Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ... Materials Science and Engineering: B 165 (1-2), 38-41, 2009	22	2009
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ... Nanoscale research letters 10 (1), 1-5, 2015	21	2015
Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, AE Belyaev, ... Applied physics letters 95 (3), 031907, 2009	21	2009
On the formation of Ni-based ohmic contacts to n-type 4H-SiC AV Kuchuk, VP Kladko, A Piotrowska, R Ratajczak, R Jakieła Materials Science Forum 615, 573-576, 2009	19	2009
Amorphous Ta–Si–N diffusion barriers on GaAs A Kuchuk, E Kaminska, A Piotrowska, K Golaszewska, E Dynowska, ... Thin Solid Films 459 (1-2), 292-296, 2004	19	2004
Problemy diahnostyky real'nykh napivprovidnykovykh krystaliv (Problems of Real Semiconductor Crystals Diagnostics) PI Barans' kyy, OY Byelyayev, GP Gaidar, VP Klad'ko, AV Kuchuk Naukova dumka, Kyiv, 2014	18	2014
Nanoscale Electrostructural Characterization of Compositionally Graded Al_xGa_1–xN Heterostructures on GaN/Sapphire (0001) Substrate AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ... ACS applied materials & interfaces 7 (41), 23320-23327, 2015	17	2015
Structural transformation and functional properties of vanadium oxide films after low-temperature annealing Y Goltvyanskyi, I Khatsevych, A Kuchuk, V Kladko, V Melnik, P Lytvyn, ... Thin Solid Films 564, 179-185, 2014	17	2014
Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices AV Kuchuk, VP Kladko, TL Petrenko, VP Bryksa, AE Belyaev, YI Mazur, ... Nanotechnology 25 (24), 245602, 2014	17	2014
Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ... Journal of Electronic Materials 45 (12), 6265-6272, 2016	16	2016
Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ... AIP Advances 8 (2), 025104, 2018	15	2018

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