| AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution BJ Godejohann, E Ture, S Müller, M Prescher, L Kirste, R Aidam, ... physica status solidi (b) 254 (8), 2017 | 35 | 2017 |
| High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers E Ture, P Bruckner, B Godejohann, R Aidam, M Alsharef, R Granzner, ... Journal of the Electron Devices Society, IEEE 4 (1), 1-6, 2016 | 33 | 2016 |
| High-Power (> 2 W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer E Ture, S Leone, P Brückner, R Quay, O Ambacher 2019 IEEE MTT-S International Microwave Symposium (IMS), 1407-1410, 2019 | 28 | 2019 |
| High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication R Quay, D Schwantuschke, E Ture, F van Raay, C Friesicke, S Krause, ... physica status solidi (a), 2018 | 25 | 2018 |
| First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power E Ture, P Brückner, M Alsharef, R Granzner, F Schwierz, R Quay, ... 2017 IEEE MTT-S International Microwave Symposium (IMS), 35-37, 2017 | 22 | 2017 |
| W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology F Thome, E Ture, P Brückner, R Quay, O Ambacher 2018 11th German Microwave Conference (GeMiC), 331-334, 2018 | 21 | 2018 |
| RF Performance of Trigate GaN HEMTs M Alsharef, M Christiansen, R Granzner, E Ture, R Quay, O Ambacher, ... IEEE Transactions on Electron Devices 63 (11), 4255-4261, 2016 | 21 | 2016 |
| Fan-out Wafer Level Packaging of GaN Components for RF Applications T Braun, TD Nguyen, S Voges, M Wöhrmann, R Gernhardt, KF Becker, ... 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 7-13, 2020 | 16 | 2020 |
| Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length E Ture, P Brueckner, R Quay, O Ambacher, M Alsharef, R Granzner, ... 2016 11th European Microwave Integrated Circuits Conference (EuMIC), 61-64, 2016 | 12 | 2016 |
| Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design E Ture, P Bruckner, FV Raay, R Quay, O Ambacher, M Alsharef, ... European Microwave Integrated Circuits Conference (EuMIC), 2015 10th, 97-100, 2015 | 12 | 2015 |
| High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier V Carrubba, S Maroldt, M Musser, E Ture, M Dammann, F van Raay, ... IEEE Microwave and Wireless Components Letters 25 (8), 526-528, 2015 | 12 | 2015 |
| Frequency multiplier and mixer MMICs based on a metamorphic HEMT technology including schottky diodes F Thome, E Ture, R Iannucci, A Leuther, F Schäfer, A Navarrini, P Serres IEEE Access 8, 12697-12712, 2020 | 8 | 2020 |
| Performance of tri-gate AlGaN/GaN HEMTs M Alsharef, R Granzner, F Schwierz, E Ture, R Quay, O Ambacher 2016 46th European Solid-State Device Research Conference (ESSDERC), 176-179, 2016 | 8 | 2016 |
| GaN-Based Tri-Gate High Electron Mobility Transistors E Ture Albert-Ludwigs-Universität Freiburg, 2016 | 8* | 2016 |
| E-Band Transmitter with 3 W Complex Modulated Signal Output Power Performance B Schoch, D Wrana, R Henneberger, S Wagner, E Ture, A Tessmann, ... 2021 51st European Microwave Conference (EuMC), 458-461, 2022 | 7 | 2022 |
| A dual-band UMTS/LTE highly power-efficient Class-ABJ Doherty GaN PA V Carrubba, E Ture, S Maroldt, M Musser, F Van Raay, R Quay, ... European Microwave Conference (EuMC), 2015 45th, 1164-1167, 2015 | 6 | 2015 |
| Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering E Ture, V Carrubba, S Maroldt, M Musser, H Walcher, R Quay, ... Microwave Conference (EuMC), 2014 44th European, 1289-1292, 2014 | 6 | 2014 |
| Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean… R Quay, P Brückner, A Tessmann, E Ture, D Schwantuschke, ... 2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop …, 2017 | 5 | 2017 |
| High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power E Ture, D Schwantuschke, A Tessmann, S Wagner, P Bruckner, M Mikulla, ... Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE, 1-4, 2015 | 5 | 2015 |
| A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers F Thome, E Ture, A Leuther, F Schäfer, A Navarrini, P Serres, ... 2020 IEEE/MTT-S International Microwave Symposium (IMS), 193-196, 2020 | 4 | 2020 |
