| Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior V Kveder, M Kittler, W Schröter Physical Review B 63 (11), 115208, 2001 | 335 | 2001 |
| Room-temperature silicon light-emitting diodes based on dislocation luminescence V Kveder, M Badylevich, E Steinman, A Izotov, M Seibt, W Schröter Applied Physics Letters 84 (12), 2106-2108, 2004 | 255 | 2004 |
| On the energy spectrum of dislocations in silicon VV Kveder, YA Osipyan, W Schröter, G Zoth physica status solidi (a) 72 (2), 701-713, 1982 | 212* | 1982 |
| Dislocation-related electroluminescence at room temperature in plastically deformed silicon VV Kveder, EA Steinman, SA Shevchenko, HG Grimmeiss Physical Review B 51 (16), 10520, 1995 | 178 | 1995 |
| Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials M Seibt, R Khalil, V Kveder, W Schröter Applied Physics A 96, 235-253, 2009 | 118 | 2009 |
| Silicon light‐emitting diodes based on dislocation‐related luminescence V Kveder, M Badylevich, W Schröter, M Seibt, E Steinman, A Izotov physica status solidi (a) 202 (5), 901-910, 2005 | 100 | 2005 |
| Investigation of the energy spectrum and kinetic phenomena in dislocated Si crystals (I) VA Grazhulis, VV Kveder, V Yu. Mukhina Physica status solidi (a) 43 (2), 407-415, 1977 | 71 | 1977 |
| Structural and electrical properties of metal impurities at dislocations in silicon M Seibt, V Kveder, W Schröter, O Voß physica status solidi (a) 202 (5), 911-920, 2005 | 63 | 2005 |
| Spin‐resonant change of unlocking stress for dislocations in silicon MV Badylevich, VV Kveder, VI Orlov, YA Ossipyan physica status solidi (c) 2 (6), 1869-1872, 2005 | 62 | 2005 |
| Atomic structure and electronic states of nickel and copper silicides in silicon W Schröter, V Kveder, M Seibt, H Ewe, H Hedemann, F Riedel, A Sattler Materials Science and Engineering: B 72 (2-3), 80-86, 2000 | 59 | 2000 |
| Simulation of Al and phosphorus diffusion gettering in Si V Kveder, W Schröter, A Sattler, M Seibt Materials Science and Engineering: B 71 (1-3), 175-181, 2000 | 57 | 2000 |
| Dislocations in silicon and D-band luminescence for infrared light emitters VV Kveder, M Kittler Materials Science Forum 590, 29-56, 2008 | 52 | 2008 |
| Gettering in silicon photovoltaics: current state and future perspectives M Seibt, A Sattler, C Rudolf, O Voß, V Kveder, W Schröter physica status solidi (a) 203 (4), 696-713, 2006 | 52 | 2006 |
| Measurements of energy spectra of extended defects W Schröter, H Hedemann, V Kveder, F Riedel Journal of Physics: Condensed Matter 14 (48), 13047, 2002 | 47 | 2002 |
| Электронные свойства дислокаций в полупроводниках ЮА Осипьян, СИ Бредихин, ВВ Кведер, НВ Классен, ВД Негрий, ... М.: Эдиториал УРСС 320, 3, 2000 | 45 | 2000 |
| Hydrogen effect on the optical activity of dislocations in silicon introduced at room temperature T Sekiguchi, VV Kveder, K Sumino Journal of Applied Physics 76 (12), 7882-7888, 1994 | 44 | 1994 |
| Nonstoichiometry and electrocoloration due to injection of and ions into lithium niobate crystals S Bredikhin, S Scharner, M Klingler, V Kveder, B Red’kin, W Weppner Journal of Applied Physics 88 (10), 5687-5694, 2000 | 43 | 2000 |
| Electronic properties of dislocations in semiconductors YA Osip’yan, SI Bredikhin, VV Kveder, NV Klassen, VD Negriœ, ... Editorial URSS, Moscow, 152-310, 2000 | 37 | 2000 |
| Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and deep-level transient spectroscopy V Kveder, T Sekiguchi, K Sumino Physical review B 51 (23), 16721, 1995 | 37 | 1995 |
| Yu. A. Osip’yan, and AI Shalynin VV Kveder Zh. Eksp. Teor. Fiz 83 (2), 699, 1982 | 36 | 1982 |
