Amirhasan Nourbakhsh
Amirhasan Nourbakhsh
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Bandgap opening in oxygen plasma-treated graphene
A Nourbakhsh, M Cantoro, T Vosch, G Pourtois, F Clemente, ...
Nanotechnology 21 (43), 435203, 2010
Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios
Nano letters 16 (2), 1359-1366, 2016
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ...
Nano letters 16 (12), 7798-7806, 2016
Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2/HfO 2 gate dielectric stack
A Nourbakhsh, A Zubair, S Joglekar, M Dresselhaus, T Palacios
Nanoscale 9 (18), 6122-6127, 2017
Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing
A Nourbakhsh, M Cantoro, A Klekachev, F Clemente, B Soree, ...
The Journal of Physical Chemistry C 114 (15), 6894-6900, 2010
Single layer vs bilayer graphene: a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties
A Nourbakhsh, M Cantoro, AV Klekachev, G Pourtois, T Vosch, J Hofkens, ...
The Journal of Physical Chemistry C 115 (33), 16619-16624, 2011
Graphene transistors and photodetectors
AV Klekachev, A Nourbakhsh, I Asselberghs, AL Stesmans, MM Heyns, ...
Electrochemical Society Interface 22 (1), 63, 2013
Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter
A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song, D Jena, J Kong, ...
Nano Letters 17 (5), 3089-3096, 2017
Diameter optimization of VLS-synthesized ZnO nanowires, using statistical design of experiment
S Shafiei, A Nourbakhsh, B Ganjipour, M Zahedifar, G Vakili-Nezhaad
Nanotechnology 18 (35), 355708, 2007
Morphology optimization of CCVD-synthesized multiwall carbon nanotubes, using statistical design of experiments
A Nourbakhsh, B Ganjipour, M Zahedifar, E Arzi
Nanotechnology 18 (11), 115715, 2007
Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode
A Nourbakhsh, M Cantoro, A Hadipour, T Vosch, MH van der Veen, ...
Applied physics letters 97 (16), 163101, 2010
15-nm channel length MoS2 FETs with single- and double-gate structures
A Nourbakhsh, A Zubair, S Huang, X Ling, MS Dresselhaus, J Kong, ...
2015 Symposium on VLSI Technology (VLSI Technology), T28-T29, 2015
Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
Amirhasan Nourbakhsh, Christoph Adelmann, Yi Song, Chang Seung Lee, Inge ...
Nanoscale, 2015
Graphene-based semiconductor device
A Nourbakhsh, M Cantoro, C Huyghebaert, M Heyns, S DeGendt
US Patent 9,337,273, 2016
Highly efficient and stable MoS 2 FETs with reversible n-doping using a dehydrated poly (vinyl-alcohol) coating
CJL de la Rosa, A Nourbakhsh, M Heyne, I Asselberghs, C Huyghebaert, ...
Nanoscale 9 (1), 258-265, 2017
Bilayer Graphene Tunneling-FET for sub-0.2 V digital CMOS logic applications
TK Agarwal, A Nourbakhsh, P Raghavan, I Radu, S Gendt, M Verhelst, ...
Electron Device Letters, IEEE, 2014
Graphene based field effect transistor
A Nourbakhsh, M Heyns, SD Gendt
US Patent US20140299841 A1, 2014
Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy
M Cantoro, AV Klekachev, A Nourbakhsh, B Sorée, MM Heyns, ...
The European Physical Journal B 79 (4), 423-428, 2011
Bilayer graphene tunneling field effect transistor
A Nourbakhsh, B Soree, M Heyns, TK Agarwal
US Patent 9,293,536, 2016
Tunable n‐ and p‐type doping of single‐layer graphene by engineering its interaction with the SiO2 support
A Nourbakhsh, M Cantoro, B Li, R Müller, S De Feyter, MM Heyns, ...
physica status solidi (RRL)–Rapid Research Letters 6 (2), 53-55, 2012
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