Amirhasan Nourbakhsh
Amirhasan Nourbakhsh
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Bandgap opening in oxygen plasma-treated graphene
A Nourbakhsh, M Cantoro, T Vosch, G Pourtois, F Clemente, ...
Nanotechnology 21 (43), 435203, 2010
2832010
Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios
Nano letters 16 (2), 1359-1366, 2016
2612016
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ...
Nano letters 16 (12), 7798-7806, 2016
2142016
Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2/HfO 2 gate dielectric stack
A Nourbakhsh, A Zubair, S Joglekar, M Dresselhaus, T Palacios
Nanoscale 9 (18), 6122-6127, 2017
802017
Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing
A Nourbakhsh, M Cantoro, A Klekachev, F Clemente, B Soree, ...
The Journal of Physical Chemistry C 114 (15), 6894-6900, 2010
782010
Single layer vs bilayer graphene: a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties
A Nourbakhsh, M Cantoro, AV Klekachev, G Pourtois, T Vosch, J Hofkens, ...
The Journal of Physical Chemistry C 115 (33), 16619-16624, 2011
572011
Graphene transistors and photodetectors
AV Klekachev, A Nourbakhsh, I Asselberghs, AL Stesmans, MM Heyns, ...
Electrochemical Society Interface 22 (1), 63, 2013
442013
Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter
A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song, D Jena, J Kong, ...
Nano Letters 17 (5), 3089-3096, 2017
432017
Diameter optimization of VLS-synthesized ZnO nanowires, using statistical design of experiment
S Shafiei, A Nourbakhsh, B Ganjipour, M Zahedifar, G Vakili-Nezhaad
Nanotechnology 18 (35), 355708, 2007
302007
Morphology optimization of CCVD-synthesized multiwall carbon nanotubes, using statistical design of experiments
A Nourbakhsh, B Ganjipour, M Zahedifar, E Arzi
Nanotechnology 18 (11), 115715, 2007
302007
Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode
A Nourbakhsh, M Cantoro, A Hadipour, T Vosch, MH van der Veen, ...
Applied physics letters 97 (16), 163101, 2010
282010
15-nm channel length MoS2 FETs with single- and double-gate structures
A Nourbakhsh, A Zubair, S Huang, X Ling, MS Dresselhaus, J Kong, ...
2015 Symposium on VLSI Technology (VLSI Technology), T28-T29, 2015
212015
Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
Amirhasan Nourbakhsh, Christoph Adelmann, Yi Song, Chang Seung Lee, Inge ...
Nanoscale, 2015
192015
Graphene-based semiconductor device
A Nourbakhsh, M Cantoro, C Huyghebaert, M Heyns, S DeGendt
US Patent 9,337,273, 2016
172016
Highly efficient and stable MoS 2 FETs with reversible n-doping using a dehydrated poly (vinyl-alcohol) coating
CJL de la Rosa, A Nourbakhsh, M Heyne, I Asselberghs, C Huyghebaert, ...
Nanoscale 9 (1), 258-265, 2017
152017
Bilayer Graphene Tunneling-FET for sub-0.2 V digital CMOS logic applications
TK Agarwal, A Nourbakhsh, P Raghavan, I Radu, S Gendt, M Verhelst, ...
Electron Device Letters, IEEE, 2014
142014
Graphene based field effect transistor
A Nourbakhsh, M Heyns, SD Gendt
US Patent US20140299841 A1, 2014
122014
Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy
M Cantoro, AV Klekachev, A Nourbakhsh, B Sorée, MM Heyns, ...
The European Physical Journal B 79 (4), 423-428, 2011
122011
Bilayer graphene tunneling field effect transistor
A Nourbakhsh, B Soree, M Heyns, TK Agarwal
US Patent 9,293,536, 2016
112016
Tunable n‐ and p‐type doping of single‐layer graphene by engineering its interaction with the SiO2 support
A Nourbakhsh, M Cantoro, B Li, R Müller, S De Feyter, MM Heyns, ...
physica status solidi (RRL)–Rapid Research Letters 6 (2), 53-55, 2012
82012
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